{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,7]],"date-time":"2026-02-07T13:16:34Z","timestamp":1770470194122,"version":"3.49.0"},"reference-count":22,"publisher":"Wiley","issue":"5","license":[{"start":{"date-parts":[[2024,8,16]],"date-time":"2024-08-16T00:00:00Z","timestamp":1723766400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"funder":[{"DOI":"10.13039\/501100012503","name":"Dream Project of Ministry of Science and Technology of the People's Republic of China","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100012503","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Circuit Theory &amp; Apps"],"published-print":{"date-parts":[[2025,5]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>This paper studies the influence of the gate voltage of the power amplifier (PA) on the drain current and efficiency. This study proposes a theory of controlling input non\u2010linearity to improve the efficiency of PAs. The theoretical efficiency of the inverse Class F PA that controls the input nonlinearity is within the range of 77% to 97%. A new design method for the inverse Class F PA reconstructs the design of the load admittance space into a region instead of a point. To verify the validity of the proposed theory, an inverse Class F PA is designed and fabricated using a commercial 10\u2009W GaN high electron mobility transistor (HEMT). Results of the measurement show a high drain efficiency (DE) of 78.5%, an output power of 41.6 dBm, and a large signal gain of 12.1 dB at 1.5 GHz. The overall PA's size is controlled at 80*50\u2009\n.<\/jats:p>","DOI":"10.1002\/cta.4254","type":"journal-article","created":{"date-parts":[[2024,8,16]],"date-time":"2024-08-16T08:49:26Z","timestamp":1723798166000},"page":"3062-3073","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Input\u2013output waveform engineered inverse Class F power amplifiers with high efficiency"],"prefix":"10.1002","volume":"53","author":[{"given":"Zheming","family":"Zhu","sequence":"first","affiliation":[{"name":"School of Electronics and Information Hangzhou Dianzi University  Hangzhou China"}]},{"given":"Zhiqun","family":"Cheng","sequence":"additional","affiliation":[{"name":"School of Electronics and Information Hangzhou Dianzi University  Hangzhou China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-4204-7776","authenticated-orcid":false,"given":"Minshi","family":"Jia","sequence":"additional","affiliation":[{"name":"School of Electronics and Information Hangzhou Dianzi University  Hangzhou China"}]},{"given":"Kun","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Electronics and Information Hangzhou Dianzi University  Hangzhou China"}]},{"given":"Bingxin","family":"Li","sequence":"additional","affiliation":[{"name":"School of Electronics and Information Hangzhou Dianzi University  Hangzhou China"}]},{"given":"Zhenghao","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits Nanjing University of information Science &amp; Technology  Nanjing China"}]},{"given":"Baoquan","family":"Zhong","sequence":"additional","affiliation":[{"name":"School of Electronics and Information Hangzhou Dianzi University  Hangzhou China"}]}],"member":"311","published-online":{"date-parts":[[2024,8,16]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/MMM.2010.940101"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2021.3128497"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1109\/LMWT.2024.3369472"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1002\/mmce.10106"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2021.3065130"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2024.3380256X"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2023.3260399"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2022.3209573"},{"key":"e_1_2_8_10_1","doi-asserted-by":"crossref","unstructured":"ZanL ZhangB NiuZ LiuY.Design of continuous Class F broadband high efficiency power amplifier based on GaN HEMT. 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SharmaT. MukherjeeJ..Input\u2010output harmonic controlled broadband Class\u2010B\/J power amplifier. 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