A High Layer Scalability TSV-Based 3D-SRAM With Semi-Master-Slave Structure and Self-Timed Differential-TSV for High-Performance Universal-Memory-Capacity-Platforms.

Cha-Hsin Lin

Meng-Fan Chang Chih-Sheng Lin Wei-Cheng Wu Ming-Pin Chen Yen-Huei Chen Zhe-Hui Lin Shyh-Shyuan Sheu Tzu-Kun Ku Cha-Hsin Lin Hiroyuki Yamauchi A High Layer Scalability TSV-Based 3D-SRAM With Semi-Master-Slave Structure and Self-Timed Differential-TSV for High-Performance Universal-Memory-Capacity-Platforms. 1521-1529 2013 June 48 IEEE J. Solid State Circuits 6 https://doi.org/10.1109/jssc.2013.2253413 db/journals/jssc/jssc48.html#ChangLWCCLSKLY13

Jui-Chin Chen John H. Lau Tzu-Chien Hsu Chien-Chou Chen Pei-Jer Tzeng Po-Chih Chang Chun-Hsien Chien Yiu-Hsiang Chang Shang-Chun Chen Yu-Chen Hsin Sue-Chen Liao Cha-Hsin Lin Tzu-Kun Ku Ming-Jer Kao Challenges of Cu CMP of TSVs and RDLs fabricated from the backside of a thin wafer. 1-5 2013 3DIC https://doi.org/10.1109/3DIC.2013.6702335 conf/3dic/2013 db/conf/3dic/3dic2013.html#ChenLHCTCCCCHLLKK13 Meng-Fan Chang Po-Chih Chang Yiu-Hsiang Chang Chien-Chou Chen Jui-Chin Chen Ming-Pin Chen Shang-Chun Chen Yen-Huei Chen Chun-Hsien Chien Yu-Chen Hsin Tzu-Chien Hsu Ming-Jer Kao Tzu-Kun Ku John H. Lau Sue-Chen Liao Chih-Sheng Lin Zhe-Hui Lin Shyh-Shyuan Sheu Pei-Jer Tzeng Wei-Cheng Wu Hiroyuki Yamauchi