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ORCIDChiweon Yoon
Person information
- affiliation: Samsung Electronics, Hwasung, South Korea
- affiliation (former, PhD 2004): Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea
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2020 – today
- 2026
[j6]Sang-Soo Park
, Jaedoeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chung-Ho Yu, Makoto Hirano, Yongseok Kwon, Jonghoon Park, Ho-Joon Kim, Daein Lee, Donghyun Seo, Philkyu Kang, Byungrok Go, Minseok Kim, Seoyoon Jeon, Jaehwan Ryu, Jungmin Seo, Hwan-Seok Ku, Youngmin Jo, Doo-Hyun Kim, Hyunjun Yoon, Wontae Kim, Inmo Kim, Sunghoon Kim, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Youngdon Choi, Il-Han Park, Chiweon Yoon, Hyunsuk Kim, Jae-hoon Jang, Seungjae Lee, Ki-Whan Song, Sunghoi Hur:
A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs. IEEE J. Solid State Circuits 61(1): 250-258 (2026)- [c13]Ji-Won Moon, Taehyeon Kim, Minwook Kim, Hyeonwoo Seong, Jewon Lee, Jeongbin Park, Dongjun Park, Jaehoon Lee, Jung-June Park, Chiweon Yoon, Jae-Yoon Sim, Seon-Kyoo Lee:
37.7 A 12.8Gb/s Parallel Receiver with a One-Way Self-Training Scheme for Equalizing ISI and Reflections in Multi-Drop Memory Interfaces. ISSCC 2026: 636-638 - [c12]Byeong-Chan Kim, Kyongsu Lee, Dongjun Park, Jung-June Park, Chiweon Yoon, Jae-Yoon Sim, Seon-Kyoo Lee:
A 0.87pJ/b 17Gb/s/pin Parallel Receiver with a Local DQS Recovery for a Supply-Noise-Tolerant DQS Distribution in High-Performance NAND Flash Interfaces. ISSCC 2026: 638-640 - 2025
- [j5]Bu-Il Nam, Jayang Yoon, Kyunghea Lee, Sol Kim, Junhong Park, Chi-Weon Yoon, Eunkyoung Kim:
Integrated Circuit to Compensate Parasitic Leakage Component for WL Leakage Current in nand Flash Memory. IEEE Solid State Circuits Lett. 8: 257-260 (2025) - [c11]Sang-Soo Park, Jaedoeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chungho Yu, Makoto Hirano, Yongseok Kwon, Jonghoon Park, Hojoon Kim, Daein Lee, Donghyun Seo, Byungrok Go, Seoyoon Jeon, Yoonjee Kim, Doo-Hyun Kim, Youngmin Jo, Hyun-Jun Yoon, Junehong Park, In-Mo Kim, Sunghoon Kim, Hokil Lee, Je-Hyeon Yu, Sanglok Kim, Hwan-Seok Ku, Jungmin Seo, Jindo Byun, Seunghyeon Yun, Kyoungtae Kang, Seung-Beom Kim, Yohan Lee, Yongkyu Lee, Kyung-Hwa Kang, Hanjun Lee, YoungHwan Ryu, Hyundo Kim, Wontae Kim, Hyeongdo Choi, Juho Jeon, Ansoo Park, Raehyun Song, Jae-Hwan Kim, Jungsoo Kim, Hwaseok Lee, Mookyung Lee, Jae-Ick Son, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Hyuckjoon Kwon, Youngdon Choi, Chiweon Yoon, Seungjae Lee, Kiwhan Song, Sunghoi Hur:
30.1 A 28Gb/mm24XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs. ISSCC 2025: 1-3 - 2023
- [c10]Bu-Il Nam, Jayang Yoon, Kyunghea Lee, Sol Kim, Junhong Park, Chi-Weon Yoon, Eunkyoung Kim:
Integrated Circuit to Compensate Parasitic Leakage Component for WL Leakage Current in NAND Flash Memory. A-SSCC 2023: 1-3 - [c9]Youngmin Jo, Anil Kavala, Tongsung Kim, Byung-Kwan Chun, Jungjune Park, Taesung Lee, Jungmin Seo, Manjae Yang, Taehyeon Park, Hyunjin Kwon, Cheolhui Lee, Younghoon Son, Junghwan Kwak, Younggyu Lee, Hwan-Seok Ku, Dae-Hoon Na, Changyeon Yu, Jonghoon Park, Jae-Hwan Kim, Hyojin Kwon, Chan-ho Kim, Moon-Ki Jung, Chanjin Park, Donghyun Seo, Moosung Kim, Seungjae Lee, Jin-Yub Lee, Dongku Kang, Chiweon Yoon, Sunghoi Hur:
A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c8]Moosung Kim, Sung-Won Yun, Jungjune Park, Hyun Kook Park, Jungyu Lee, Yeong Seon Kim, Dae-Hoon Na, Sara Choi, Youngsun Song, Jonghoon Lee, Hyun-Jun Yoon, Kangbin Lee, Byunghoon Jeong, Sanglok Kim, Junhong Park, Cheon An Lee, Jaeyun Lee, Ji-Sang Lee, Jin Young Chun, Joonsuc Jang, Younghwi Yang, Seung Hyun Moon, Myung-Hoon Choi, Wontae Kim, Jungsoo Kim, Seok-Min Yoon, Pansuk Kwak, Myunghun Lee, Raehyun Song, Sunghoon Kim, Chiweon Yoon, Dongku Kang, Jin-Yub Lee, Jai Hyuk Song:
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. ISSCC 2022: 136-137 - 2021
- [j4]Dae-Hoon Na, Jang-Woo Lee, Seon-Kyoo Lee, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Anil Kavala, Tongsung Kim, Dong-Su Jang, Youngmin Jo, Ji-Yeon Shin, Byung-Kwan Chun, Tae-Sung Lee, Byunghoon Jeong, Chi-Weon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jinyub Lee, Jai Hyuk Song:
A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage. IEEE J. Solid State Circuits 56(4): 1129-1140 (2021) - [c7]Tongsung Kim, Anil Kavala, Hyunsuk Kang, Youngmin Jo, Jungjune Park, Kyoungtae Kang, Byung-Kwan Chun, Dong-Ho Shin, Dong-Su Jang, Byunghoon Jeong, Chi-Weon Yoon, Jinyub Lee, Jai Hyuk Song:
A Hybrid ZQ Calibration Design for High-Density Flash Memory Toggle 5.0 High-speed Interface. A-SSCC 2021: 1-2 - [c6]Chi-Weon Yoon, Hyunggon Kim, Seon-Kyoo Lee, Jinyub Lee, Jai Hyuk Song:
Issues and Key Technologies for Next Generation 3D NAND. ICEIC 2021: 1-4 - [c5]Jiho Cho, D. Chris Kang, Jongyeol Park, Sangwan Nam, Jung-Ho Song, Bong-Kil Jung, Jaedoeg Lyu, Hogil Lee, Won-Tae Kim, Hongsoo Jeon, Sunghoon Kim, In-Mo Kim, Jae-Ick Son, Kyoungtae Kang, Sang-Won Shim, JongChul Park, Eungsuk Lee, Kyung-Min Kang, Sang-Won Park, Jaeyun Lee, Seung Hyun Moon, Pansuk Kwak, Byunghoon Jeong, Cheon An Lee, Kisung Kim, Junyoung Ko, Tae-Hong Kwon, Junha Lee, Yohan Lee, Chaehoon Kim, Myeong-Woo Lee, Jeong-Yun Yun, HoJun Lee, Yonghyuk Choi, Sanggi Hong, Jonghoon Park, Yoonsung Shin, Hojoon Kim, Hansol Kim, Chiweon Yoon, Dae-Seok Byeon, Seungjae Lee, Jin-Yub Lee, Jai Hyuk Song:
A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface. ISSCC 2021: 426-428 - 2020
- [c4]Jang-Woo Lee, Dae-Hoon Na, Anil Kavala, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Tongsung Kim, Seon-Kyoo Lee, Dong-Su Jang, Byung-Kwan Chun, Youngmin Jo, Sunwon Jung, Doo-Il Jung, Chan-ho Kim, Daewoon Kang, Tae-Sung Lee, Byunghoon Jeong, Chiweon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jin-Yup Lee, Sangjoon Hwang, Jai Hyuk Song:
A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [c3]Dongku Kang, Minsu Kim, Suchang Jeon, Wontaeck Jung, Jooyong Park, Gyo Soo Choo, Dong-Kyo Shim, Anil Kavala, Seungbum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun Wook Park, ByungJun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyun-Jin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Young-Sun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-Ghee Hahn, Ki-Sung Kim, Kyungmin Kim, Euisang Yoon, Won-Tae Kim, Inryul Lee, Seunghyun Moon, Jeong-Don Ihm, Dae-Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kyehyun Kyung:
A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface. ISSCC 2019: 216-218 - 2012
- [c2]Daeyeal Lee, Ik Joon Chang, Sangyong Yoon, Joonsuc Jang, Dong-Su Jang, Wook-Ghee Hahn, Jong-Yeol Park, Doo-Gon Kim, Chiweon Yoon, Bong-Soon Lim, ByungJun Min, Sung-Won Yun, Ji-Sang Lee, Il-Han Park, Kyung-Ryun Kim, Jeong-Yun Yun, Youse Kim, Yong-Sung Cho, Kyung-Min Kang, Sang-Hyun Joo, Jin-Young Chun, Jung-No Im, Seunghyuk Kwon, Seokjun Ham, Ansoo Park, Jae-Duk Yu, Nam-Hee Lee, Tae-Sung Lee, Moosung Kim, Hoosung Kim, Ki-Whan Song, Byung-Gil Jeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun:
A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology. ISSCC 2012: 430-432
2000 – 2009
- 2005
- [j3]Ju-Ho Sohn, Yong-Ha Park, Chi-Weon Yoon, Ramchan Woo, Se-Jeong Park, Hoi-Jun Yoo:
Low-power 3D graphics processors for mobile terminals. IEEE Commun. Mag. 43(12): 90-99 (2005) - 2002
- [j2]Ramchan Woo, Chi-Weon Yoon, Jeonghoon Kook, Se-Joong Lee, Hoi-Jun Yoo:
A 120-mW 3-D rendering engine with 6-Mb embedded DRAM and 3.2-GB/s runtime reconfigurable bus for PDA chip. IEEE J. Solid State Circuits 37(10): 1352-1355 (2002) - 2001
- [j1]Chi-Weon Yoon, Ramchan Woo, Jeengheon Kook, Se-Joong Lee, Kangmin Lee, Hoi-Jun Yeo:
An 80/20-MHz 160-mW multimedia processor integrated with embedded DRAM, MPEG-4 accelerator and 3-D rendering engine for mobile applications. IEEE J. Solid State Circuits 36(11): 1758-1767 (2001) - [c1]Kangmin Lee, Chi Weon Yoon, Ramchan Woo, Jeong-Hun Kook, Ja-Il Koo, Tae-Sung Jung, Hoi-Jun Yoo:
A comparative performance analysis of a DDR-SDRAM, a D-RDRAM, and a DDR-FCRAM using a POPeye simulator. ISCAS (5) 2001: 81-84
Coauthor Index
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