"17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS ..."

Hidehiro Fujiwara et al. (2015)

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DOI: 10.1109/ISSCC.2015.7063051

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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Hidehiro Fujiwara, Li-Wen Wang, Yen-Huei Chen, Kao-Cheng Lin, Dar Sun, Shin-Rung Wu, Jhon-Jhy Liaw, Chih-Yung Lin, Mu-Chi Chiang, Hung-Jen Liao, Shien-Yang Wu, Jonathan Chang:
17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies. ISSCC 2015: 1-3

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