<?xml version="1.0" encoding="US-ASCII"?>
<dblp>
<article key="journals/access/YangMEKL22" mdate="2022-12-05">
<author>Si-Seok Yang</author>
<author orcid="0000-0003-4275-4049">Sung-Soo Min</author>
<author orcid="0000-0002-3213-587X">Chan-Hyeok Eom</author>
<author orcid="0000-0002-3753-7720">Rae-Young Kim</author>
<author orcid="0000-0003-3589-2814">Gi-Young Lee</author>
<title>Design Method of Vertical Lattice Loop Structure for Parasitic Inductance Reduction in a GaN HEMTs-Based Converter.</title>
<pages>117215-117224</pages>
<year>2022</year>
<volume>10</volume>
<journal>IEEE Access</journal>
<ee type="oa">https://doi.org/10.1109/ACCESS.2022.3220325</ee>
<url>db/journals/access/access10.html#YangMEKL22</url>
</article></dblp>
