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High Precision VCTCXO Specifications

This document summarizes the specifications of a 5.0 x 3.2 mm SMD high precision voltage controlled temperature compensated crystal oscillator. Key specifications include a frequency tolerance of ±0.2ppm between -40 to +85 degrees Celsius, supply current of 3.5mA for CMOS output and 6mA for clipped sine wave output, and control voltage range of 2.5±10V for the voltage controlled temperature compensated version. Typical applications include base stations and femtocells.

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0% found this document useful (0 votes)
135 views1 page

High Precision VCTCXO Specifications

This document summarizes the specifications of a 5.0 x 3.2 mm SMD high precision voltage controlled temperature compensated crystal oscillator. Key specifications include a frequency tolerance of ±0.2ppm between -40 to +85 degrees Celsius, supply current of 3.5mA for CMOS output and 6mA for clipped sine wave output, and control voltage range of 2.5±10V for the voltage controlled temperature compensated version. Typical applications include base stations and femtocells.

Uploaded by

isotemp
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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TW Type

5.0 x 3.2 mm SMD High Precision Voltage Controlled Temperature Compensated Crystal Oscillator
FEATURE
- Typical 5.0 x 3.2 x 1.55 mm ceramic SMD package.
- 0.2ppm, -40 C ~+85 C ; 0.05ppm, -10 C +70 C - CMOS and Clipped Sine wave (without DC-cut capacitor) output optional.
o o o o

TYPICAL APPLICATION
- Base Stations, Stratum 3
- Femtocell

RoHS Compliant Standard

DIMENSION (mm)

SOLDER PAD LAYOUT (mm)

To ensure optimal oscillator performance, Place a by-pass capacitor of 0.1F as close to the part as possible between Vdd and GND pads.

ELECTRICAL SPECIFICATION
Param eter Supply Voltage Variation (VDD) 5% Frequency Range Standard Frequen cy (for CMOS) Standard Frequen cy (for Clipped Sine) Frequency Tolerance* Frequency Stabilit y Vs Suppl y Voltage ( 5%) change (CMOS) Vs Load (10%) change Vs Aging (after 1 year) Supply Current (CMOS output) Supply Current (Clipped Sine W ave) Output Level (CMOS) Output High (Logic 1) Output Low (Logic 0) Duty Output Level (Clipped Sine W ave) Load (CMOS) Load (Clipped Sine W ave) Control Voltage Range (VCTCXO) Pulling Range (VCTCXO) Vc Input Imped ance (VCTCXO) Phase Noise @ 12.8 MHz 100 Hz 1 KHz 10 KHz Start Time Min. 4.75 10 5.0V Max. 5.25 40 Min. 2.97 10 3.3V Max. 3.63 40 Unit V MHz 2.0 0.2 0.2 1.0 6 3.5 10% VDD 55 15pF 10K//10pF 2.5 10.0 -125 -145 -150 2 0.5 5.0 100 -125 -145 -150 2 125 2.5 10.0 V ppm K ppm

90% VDD 45 0.8

10, 12.8, 19.2, 20, 26, 30.72 10, 12.8, 19.2, 20, 26, 30.72 2.0 0.2 0. 2 1.0 6 3.5 10% VDD 55 90% VDD 45 0.8

ppm ppm/year mA V % Vp-p

15pF 10K//10pF 0.5 5.0 100

dBc/Hz mSec
o

Storage Temp. Rang e -55 125 -55 Standard fr equenci es are frequencies whic h the cr ystal has been designed and does no imply a stoc k position o *Frequenc y at 25 C 1 hour after reflow Pac king: Tape & Reel, 1000/3000 pcs per R eel.

FREQ. STABILITY vs. TEMP. RANGE


Temp. ( C )
o

ppm

0.05 O O X

0.1 O O O X

0.2 O O O

0.28 O O O O

0.5 O O O O
* O: Available :Conditional X: Not available

0~+55 -10~+60 -10~+70 -40~+85

Specifications subject to change without notice

Rev(3)03/2013 [Link] sales@[Link]

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