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Low Power Wideband LNA Design

The document discusses an integrated low noise amplifier (LNA) and mixer for multi-band wireless applications. The proposed LNA covers a frequency range from 300MHz to 6GHz using a 28nm CMOS process and dissipates only 1.5mW of power using a 1V supply. It also discusses how technological advancements have allowed for the integration of digital, analog, and RF blocks into system-on-chip designs with low power consumption due to reduced chip dimensions and transistor frequencies comparable to bipolar junction transistors.

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Damodar Telu
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62 views1 page

Low Power Wideband LNA Design

The document discusses an integrated low noise amplifier (LNA) and mixer for multi-band wireless applications. The proposed LNA covers a frequency range from 300MHz to 6GHz using a 28nm CMOS process and dissipates only 1.5mW of power using a 1V supply. It also discusses how technological advancements have allowed for the integration of digital, analog, and RF blocks into system-on-chip designs with low power consumption due to reduced chip dimensions and transistor frequencies comparable to bipolar junction transistors.

Uploaded by

Damodar Telu
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd

Integrated LNA and Mixer Basics

Abstract: In this letter a low power wideband low noise amplifier is presented for multi band wireless applications. Generally the LNA Amplifier uses multiple feed back paths which give the opportunity of choosing the transconductance. The proposed LNA covers the fre uency range from !""#$% to &.' G$% using (&nm )#*+ is described. It dissipates ,.'mw power using ,power supply. T$. overwhelming technological advancements have reduced the )#*+ device dimensions considerably. $ence/ for system0on0chip 1+*)2 designs/ the ability to integrate digital/ analog and 34 building blocks with low power consumption is an acute necessity. Also/ scaling to nanometric dimensions have resulted in )#*+ devices achieving transit fre uencies comparable to those of bipolar 5unction transistors 167Ts2 8,9:8;9. +ince the 4ederal )ommunications )ommission 14))2 defined the fre uency spectral mask for the ultra0wideband 1<=62 radios and authori%ed this technology for commercial use in !""! 8>9/ 8&9/ <=6 has been the emerging broadband wireless technology that promises connectivity within the ;.,:,".( G$% band.

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