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P-N Junction Diode V-I Characteristics

This document describes an experiment to observe the forward and reverse bias voltage-current (V-I) characteristics of a PN junction diode. The circuit diagram and procedure are provided. In forward bias, the voltage and current across the diode both increase as the applied voltage increases up to 0.7V, above which the current increases exponentially. In reverse bias, the voltage across the diode is nearly equal to the applied voltage, while the current remains nearly zero up to the breakdown voltage, above which the current sharply increases and the diode can be damaged. The observations are tabulated and the V-I characteristics curves are plotted and found to match the expected diode characteristics.

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Abdullah Shah
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0% found this document useful (0 votes)
137 views6 pages

P-N Junction Diode V-I Characteristics

This document describes an experiment to observe the forward and reverse bias voltage-current (V-I) characteristics of a PN junction diode. The circuit diagram and procedure are provided. In forward bias, the voltage and current across the diode both increase as the applied voltage increases up to 0.7V, above which the current increases exponentially. In reverse bias, the voltage across the diode is nearly equal to the applied voltage, while the current remains nearly zero up to the breakdown voltage, above which the current sharply increases and the diode can be damaged. The observations are tabulated and the V-I characteristics curves are plotted and found to match the expected diode characteristics.

Uploaded by

Abdullah Shah
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Experiment 2:

Title: P-N JUNCTION DIODE CHARACTERISTICS


Name:
Abdullah Shah(18jzele0236)
Dated:
1st December, 2020

Objectives:
To Observe and Draw the Forward and Reverse Bias V-I Characteristics of a P-N Junction
Diode.

Apparatus or Equipment used;

[Link]
[Link]
[Link]( 1k ohm)
[Link](1N43007GP)
[Link]
[Link] voltage source(DC interactive voltage source)
[Link] wires

Theory:
V-I characteristics stand for voltage-current characteristics of an electrical component or
device. ... Put simply; it is the graph between Voltage and Current obtained when current is
measured through an electronic component as a voltage is applied across i.

When the positive terminal of the external diode is connected to the P-type and the
negative terminal is connected to the N-type material, such a bias is called Forward-Bias
condition. In Forward-bias, the electrons in the N-type material and the holes in the P-type
material are forced to recombine with the ions present in the depletion region by an
externally applied voltage. The net effect is reduction of the junction width.
When the positive terminal of the external diode is connected to the N-type and the
negative terminal is connected to the P-type material, such a bias is called Reverse-Bias
condition. n Reverse-bias, the number of positive ions in the N-type material and the
number of negative ions in the P-type material will increase due to the large number of free
electrons drawn to the positive potential of the applied voltage. The net effect is widening
of the depletion region.

Circuit Diagram:
Forward bias:

Diode in Forward Bias condition


Procedure:
1).First we will make a circuit as shown in the above figure on multisim.
2).DC power supply should be connecting in such a way that the diode is in forward bias
condition.
3). For the measurement of current in the circuit the Ammeter should be connecting in
series.
4). For measuring of voltage the voltmeter should be connecting in parallel across diode.
5).After all this arrangement we will apply the voltage.
6). we will increase the value of voltage and we will note the value of voltage(across diode)
and also current across [Link] range of voltage is 0-30v.
7). After noting these values we will plot a graph by using excel and this graph should be
similar to forward VI characteristics of diode.
Observations:
Forward Bias condition:
[Link] Applied voltage (V) Voltage across Diode(V) Current through
Vd Diode(A)
Id
1 0 0 0
2 0.3 0.291 0.00000866
3 0.6 0.440 0.0001595
4 1.2 0.515 0.000684
5 1.8 0.547 0.001253
6 2.7 0.574 0.00212
7 3 0.581 0.00241
8 4.5 0.605 0.00389
9 6 0.622 0.00537
10 8.1 0.639 0.00746
11 12 0.661 0.01134
12 18 0.683 0.0173
13 24 0.699 0.02302
14 27 0.705 0.02629
15 30 0.711 0.0292

Forward VI characteristics:
Circuit diagram:
Reverse Bias:

Circuit diagram when diode is connected in revese bias

Procedure:
1).First we will make a circuit as shown in the above figure on multisim.
2).DC power supply should be connecting in such a way that the diode is in reverse bias
condition.
3). For the measurement of current in the circuit the Ammeter should be connecting in
series.
4). For measuring of voltage the voltmeter should be connecting in parallel across diode.
5).After all this arrangement we will apply the voltage.
6). we will increase the value of voltage and we will note the value of voltage(across diode)
and also current across diode. The range of voltage is [Link] when the range is small the
graph is straight in that range but if we increases the voltage further the graph show
different behavior.
7). After noting these values we will plot a graph by using excel and this graph should be
similar to forward VI characteristics of diode.
Observations:
Reverse Bias condition:
[Link] Applied voltage (V) Voltage across Diode(V) Current through Diode(A)
Vd Id
1 0 0 0
2 0.3 -0.299 - 0.000000066
3 3.3 -3.299 - 0.000000673
4 6.0 -5.99 -0.000000675
5 12 -11.99 -0.00000068
6 24 -23.99 - 0.00000069
7 30 -29.99 -0.000000699
8 50 -49.99 -0.0000007
9 150 -149.99 -0.000000819
10 350 -349.99 -0.000001
11 500 -499.99 -0.00000117
12 850 -850 -0.00000153
13 950 -950 -0.0000016
14 1000 -1000 -0.000102
15 1100 -1000 -0.099999

VI characteristic curve of Diode:


Reverse bias:
Conclusions:
[Link] forward bias condition as the voltage increases the voltage and current across diode
increases.
2. When voltage increases and voltage across diode is 0.7(silicon) this voltage is called knee
voltage.
[Link] voltage across diode is greater than knee voltage the current increases
exponentially.
[Link] voltage is increases in reverse bias the voltage across diode is same as that of input
voltage because that diode act as open circuit and the same input voltage appear across
diode.
[Link] voltage is increase from 0v to 30v in reverse direction the current is nearly equal to
zero .
[Link] when voltage is further increases a time will come at which current is increases that
voltage at which the current is increases in reverse bias is called breakdown voltage.
7. At breakdown voltage the diode is burnt and current is increases but voltage remain
same.

…………………………………………………………………………………………………………………………………………….
End of 2nd experiment!

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