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IIT Kharagpur Basic Electronics Lab Guide

The document provides information about the Basic Electronics Lab course offered at Pandit Deendayal Petroleum University. It includes details such as the course structure, time table, list of experiments, lesson plan, references and policies related to attendance and evaluation. The course aims to help students understand the fundamentals of electronic components and semiconductor devices through hands-on experiments in areas such as diodes, transistors, operational amplifiers and digital electronics.

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Yash Bhavani
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0% found this document useful (0 votes)
475 views45 pages

IIT Kharagpur Basic Electronics Lab Guide

The document provides information about the Basic Electronics Lab course offered at Pandit Deendayal Petroleum University. It includes details such as the course structure, time table, list of experiments, lesson plan, references and policies related to attendance and evaluation. The course aims to help students understand the fundamentals of electronic components and semiconductor devices through hands-on experiments in areas such as diodes, transistors, operational amplifiers and digital electronics.

Uploaded by

Yash Bhavani
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
  • Introduction
  • Experiment Sessions
  • Course Resources
  • Experiment Details and Analysis

Dr.

Devlina Adhikari

BASIC ELECTRONICS LAB


PhD (IIT Kharagpur)
Assistant Professor, ICT
COURSE STRUCTURE

Pandit Deendayal Petroleum University School of Technology

20IC101P Basic Electronics Lab

Teaching Scheme Examination Scheme


Theory Practical Total
L T P C Hrs/Week
MS ES IA LW LE/Viva Marks

0 0 1 1 1 0 0 0 25 25 50
TIME TABLE
9:00 to 9:55 10:00 to 10:55 11:00 to 11:55 12:00 to 12:55

L-(20CH101T) L-(20ME102T) L-(20MA101T) T-(20CP101P)


MON
KALM,E202 SSK,E202 MAS,E202 VAKH,C008

L-(20IC101T) L-(20HS102T) L-(20CH101T) T-A(20ME101P)


TUE
STNA,E202 DEY,MNS,E202 KALM,E202 VIV,D006

L-(20ME102T) L-(20MA101T) L-(20HS102T) T-(20IC101P)


WED
SSK,E202 MAS,E202 DEY,MNS,E202 DEA,E112-113

L-(20CP101T) L-(20MA101T) L-(20CH101T) T-B(20ME101P)


THU
VAKH,E202 MAS,E202 KALM,E202 RVC,D006

L-(20HS102T) L-(20ME102T) L-(20IC101T) T-(20MA101T)


FRI
DEY,MNS,E202 SSK,E202 STNA,E202 MAS,E202
EXPERIMENT SESSIONS (SIMULATION BASED)
1. To study the simulation tool and its features for analog circuit simulation.
2. To study the VI characteristic of silicon and germanium diodes.
3. To study reverse characteristics of Zener diode.
4. To study half wave, full wave and bridge rectifiers
5. To study BJT as switch.
6. To study common emitter amplifier.
7. To study different biasing circuits of BJT.
8. To study transfer and drain characteristic of FET and MOSFET.
EXPERIMENT SESSIONS (SIMULATION BASED)
9. To study the simulation of digital circuits.
10. To study and verify logic gates.
11. To implement X-OR and X-NOR gates using basic gates.
12. To study and design adder and subtracter circuits.
13. To study and design flip flops.
14. To study OPAMP and its properties.
15. To study ADC and DAC.
16. Design of mini project in a group of 4-5 students.
LESSON PLAN

Lect. No. Topic Taught Remarks

1-4 Experiment No. 1-4

5-8 Experiment No. 5-8

9-12 Experiment No. 9-12

13-16 Experiment No. 13-16


REFERENCES
Boylestad and Nashlesky, “Electronic Devices and Circuit Theory”, PHI.
N.N. Bhargava, S.C. Gupta, and D.C. Kulshreshtha, “Basic Electronics And Linear
Circuits”, McGraw Hill Education (India).
R. A. Gaikwad, “Operational Amplfier and Linear Integrated Circuits”, PHI.
Morris Mano, “Digital Design”, PHI.
J. Millman, C. Halkias and C. Parikh, “Integrated Electronics”, Tata McGraw Hill.
ATTENDANCE

University Rule – 80% Mandatory


My Requirement – 100% Mentally !
EVALUATION SCHEME

Lab Note-Book - 50%

End-Sem (Lab-Exam/Viva) - 50%


COURSE OBJECTIVES

 To understand the characteristics of PN junction diodes and their applications.

 To Observe properties of BJT, FET and MOSFET.

 To illustrate the OPAMP application in different real life circuits.

 To introduce basic concepts of digital electronics.


COURSE OUTCOMES (CO’S)

CO1: Study the fundamentals of electronic components.


CO2: Understand the working principle of semiconductor devices.
CO3: Apply the analog and digital concept in building real time circuits.
CO4: Analyze the behaviour of semiconductor devices, OPAMP, ADC and DAC.
CO5: Evaluate different circuit for different device parameters.
CO6: Build analog and digital sub-system.
OFFICE HOUR
This is reserved time slot for students by faculty
Faculty will make sure to remain in cabin during this time slot for the session
Monday 11.00 am -12.00 pm
Purpose
 Doubt clearing Email: [Link]@[Link]
Contact No.: 07923275459
 One to one interactions
Cabin Location
Room No. 208 – Faculty Wing, 2nd Floor, E Block, School of Technology
LAB NOTE BOOK
[Link] of the Experiment
• Name [Link] Required
• Roll No.
• Department [Link]
• Subject
[Link]
[Link]
VI CHARACTERISTIC OF SILICON SESSION 2
AND GERMANIUM DIODES
DIODES

A diode is a two-terminal electronic component that


conducts current primarily in one direction (asymmetric conductance);
it has low (ideally zero) resistance in one direction, and high ideally
infinite resistance in the other.
DIFFERENT TYPES OF DIODES

p-n diode
Zener diode Photodiode

Light-emitting diode Varicap Tunnel diode

Schottky diode Transient-voltage-


suppression diode (TVS)
BIASING
FORWARD BIAS

 p: +
 n: -
 Width of Depletion Region decreases.
 Majority Carrier flow.
 Reverse saturation Current Is
REVERSE BIAS

 p: -
 n: +
 Width of Depletion Region increases.
 Minority Carrier flow.
 Reverse saturation Current Is
CHECKING OF DIODE
A digital multimeter's diode test:
• Diode produces a small voltage between the test leads enough to forward-bias a diode
junction.
• Normal voltage drop is 0.5 V to 0.8 V.
• The forward-biased resistance of a good diode should range from 1000 ohms to 10 ohms.
• When reverse-biased, a digital multimeter's display will read OL (which indicates very high
resistance).

• Diodes are assigned current ratings.


• If the rating is exceeded and the diode fails, it may short and
• Either a) allow current to flow in both directions or
b) halt current from flowing in either direction.
CHECKING OF DIODE

Forward Bias: lamp Glow Reverse Bias: No Glow


SHOCKLEY’S EQUATION
The general characteristics of a semiconductor diode can be defined by the following equation,
referred to as Shockley’s equation, for the forward- and reverse-bias regions:
FORWARD BIAS
REVERSE BIAS
V-I CHARACTERISTICS
Silicon semiconductor diode characteristics.
• The voltage at which the forward diode
current starts increasing rapidly is
known as the cut in voltage of a diode.
• The cut in voltage is very close to the
barrier potential.
• Cut in voltage is also called as knee
voltage.
• For Silicon (Si) diode the value of knee
voltage is 0.7 volts and for Germanium
(Ge) diode the value is 0.3 volts.
REVERSE CHARACTERISTICS OF SESSION 3
ZENER DIODES
ZENER DIODE invented by the American engineer Clarance Melvin Zener

A Zener diode is a
heavily doped
semiconductor device
that is designed to
operate in the reverse
direction.
REVERSE CHARACTERISTICS OF ZENER DIODE
 When a reverse voltage is applied to a Zener voltage, initially a small
reverse saturation current Io flows across the diode.
 This current is due to thermally generated minority carriers.
 As the reverse voltage is increased, at a certain value of reverse voltage,
the reverse current increases drastically and sharply.
 This is an indication that the breakdown has occurred.
 This voltage is known as breakdown voltage or Zener voltage and it is
denoted by Vz.
REVERSE CHARACTERISTICS OF ZENER DIODE
The Zener potential of a Zener diode is very
sensitive to the temperature of operation.

Power Rating – It denotes the maximum power the Zener diode can dissipate. It is
given by the product of the voltage of the diode and the current flowing through it.
10V 500mW Zener Diode DO35
TO STUDY HALF WAVE, FULL WAVE
SESSION 4
AND BRIDGE RECTIFIERS
RECTIFIERS

An electrical device which converts an alternating


current into a direct one by allowing a current to
flow through it in one direction only.
HALF WAVE RECTIFIER
HALF WAVE RECTIFIER (OUTPUT)
FULL WAVE RECTIFIER
FULL WAVE RECTIFIER (OUTPUT)
BRIDGE RECTIFIER
BRIDGE RECTIFIER (OUTPUT)
BRIDGE RECTIFIER WITH CAPACITOR (FILTER)
FILTERED OUTPUT

Common questions

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Thermal effects can alter the electrical characteristics of semiconductors, causing changes in threshold voltages, current capability, and breakdown points, which can lead to failure or reduced efficiency. Managing these effects requires implementing heat sinks, choosing appropriate materials, and designing circuits with thermal stability considerations to ensure reliability and performance consistency .

Shockley's equation provides a mathematical model for diode performance, describing current as a function of voltage. However, it assumes ideal conditions, which may not accurately predict behavior under non-ideal scenarios, such as high frequencies, significant heat, or fabrication inconsistencies, limiting its practical applicability without modifications or corrections .

Diodes are two-terminal components that allow current to flow primarily in one direction, exhibiting low resistance in the forward direction and high resistance in the reverse direction. Silicon diodes have a forward voltage drop typically around 0.7 volts, while germanium diodes have a lower forward voltage drop of approximately 0.3 volts. The cut-in or knee voltage is the threshold at which the diode starts conducting significantly, corresponding closely to their respective forward voltage drops .

A half-wave rectifier allows current to pass through only during one half of the AC cycle, producing pulsating DC, while a full-wave rectifier utilizes both halves of the AC cycle, resulting in smoother DC output. In a bridge rectifier circuit, a capacitor acts as a filter to smooth out the rectified output, reducing voltage ripple and producing a more stable DC output .

In reverse bias, a Zener diode initially conducts a small reverse saturation current due to thermal generation. Upon reaching the breakdown voltage, Vz, the reverse current increases sharply. Temperature affects the Zener voltage; as Zener diodes are sensitive to temperature changes, this can impact their performance and reliability .

Operational amplifiers can be used in numerous applications, including signal amplification, filtering, voltage regulation, and analog computation. Their primary characteristics include high input impedance, low output impedance, and the capability to provide gain, making them versatile in processing analog signals .

The outcomes include understanding the fundamentals of electronic components, grasping semiconductor devices' working principles, applying analog and digital concepts in real-time circuit development, analyzing semiconductor behaviors, OPAMPs, ADCs, and DACs, evaluating circuit parameters, and constructing analog and digital subsystems .

Biasing is crucial for setting a diode's operation point. In forward bias, the p-region is positive and the n-region is negative, reducing the depletion region's width and facilitating majority carrier flow, resulting in current conduction. In reverse bias, the p-region is negative and the n-region is positive, increasing the depletion region's width, which allows only minor reverse saturation current due to minority carrier movement .

The course integrates theoretical and simulation-based sessions that cover digital circuits, logic gates, and design of adders and subtractors. This structure helps students transition from understanding to applying digital electronics concepts by demonstrating practical uses, reinforcing theoretical learning with hands-on practice .

Simulation-based experiments offer safe, cost-effective, and versatile environments for students to experiment with complex circuits without physical constraints, enhancing understanding of theoretical concepts and fault analysis. These simulations help bridge the gap between theoretical learning and practical application, improving student confidence and competency .

BASIC ELECTRONICS LAB
Dr. Devlina Adhikari
PhD (IIT Kharagpur)
Assistant Professor, ICT
COURSE STRUCTURE
Pandit Deendayal Petroleum University
School of Technology
20IC101P
Basic Electronics Lab 
Teaching Scheme
E
TIME TABLE
9:00 to 9:55
10:00 to 10:55
11:00 to 11:55
12:00 to 12:55
MON
L-(20CH101T)
KALM,E202
L-(20ME102T)
SSK,E202
L-(20MA
EXPERIMENT SESSIONS (SIMULATION BASED)
1. To study the simulation tool and its features for analog circuit simulation. 
2. To
EXPERIMENT SESSIONS (SIMULATION BASED)
9. To study the simulation of digital circuits. 
10. To study and verify logic gates.
LESSON PLAN
Lect. No.
Topic Taught
Remarks
1-4
Experiment No. 1-4
5-8
Experiment No. 5-8
9-12
Experiment No. 9-12
13-16
Exper
REFERENCES
Boylestad and Nashlesky, “Electronic Devices and Circuit Theory”, PHI.
N.N. Bhargava, S.C. Gupta, and D.C. Kulsh
ATTENDANCE
University Rule – 80% Mandatory
My Requirement – 100%  Mentally !
EVALUATION SCHEME
Lab Note-Book - 50%
End-Sem (Lab-Exam/Viva) - 50%
COURSE OBJECTIVES
To understand the characteristics of PN junction diodes and their applications.
To Observe properties of

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