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ELECTRONIC PRINCIPLES
(ELCP204)

Lecture 03 :Bipolar Junction Transistors

 Objectives
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 Become familiar with the basic construction and

operation of the Bipolar Junction Transistor.
 Be able to apply the proper biasing to insure operation
in the active region.
 Recognize and be able to explain the characteristics of
an npn or pnp transistor.
 Become familiar with the important parameters that
define the response of a transistor.
 Be able to test a transistor and identify the three
terminals.
 Transistor history
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 The first transistor was successfully

demonstrated on December 23, 1947, at Bell
Laboratories in Murray Hill, New Jersey.
 The phrase transistor constructed from two
words, transfer and resistor which is the
basic operation principle of the first device
introduced by William Shockley, John
Bardeen and Walter Brattain.
 Transistor Construction and Type of
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Transistor
 A transistor is a semiconductor that regulates or
controls current or voltage flow in addition amplifying
and generating these electrical signals and acting as
a switch/gate for them.
 Transistors are broadly divided into follwing types:
1- bipolar transistors (bipolar junction transistors: BJTs),
2-field-effect transistors (FETs).
 Type of Transistors
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Transistor

BJT FET

NPN PNP JFET MOSFET

 Bipolar Junction Transistor (BJT)
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 The transistor is a three-layer semiconductor device

consisting of either
 Two n - and one p -type layers of material (npn)
 Two p - and one n -type layers of material (pnp).

 If we now join together two individual signal diodes back-

to-back, this will give us two PN-junctions connected
together in series as shown in figure . The fusion of these
two diodes produces a three layer, two junction, three
terminal device forming the basis of a Bipolar Junction
Transistor, or BJT.
 Bipolar Junction Transistor (BJT)
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The Bipolar Transistor basic

construction consists of two PN-
junctions producing three connecting
terminals. These three terminals are
known and labeled as
• the Emitter (E),
• the Base (B)
• the Collector (C) .
 Bipolar Junction Transistor (BJT)
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Bipolar transistor definition:

 A bipolar transistor is a semiconductor device consisting of three
areas either P-type or N-type - an area of one type is
sandwiched between areas of the other.
 A bipolar junction transistor, BJT, gains its name from the fact
that it uses both holes and electrons in its operation.
 A bipolar junction transistor, BJT, gains its name from the fact
that it uses both holes and electrons in its operation
 TRANSISTOR OPERATION
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In order for the transistor to operate properly as an

amplifier, the two pn junctions must be correctly
biased with external dc voltages. The operation of
the pnp is the same as for the npn except that the
roles of the electrons and holes, the bias voltage
polarities, and the current directions are all reversed.
One p–n junction of a transistor is reverse-biased, whereas the
other is forward-biased
 TRANSISTOR OPERATION
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a large number of majority carriers will diffuse

across the forward biased p–n junction into the n
-type material.
Since the sandwiched n -type material is very
thin and has a low conductivity, a very small
number of these carriers will take this path of
high resistance to the base terminal. The
magnitude of the base current is typically on the
order of microamperes, as compared to
milliamperes for the emitter and collector
currents
 TRANSISTOR OPERATION
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The larger number of these majority carriers will

diffuse across the reverse-biased junction into
the p -type material connected to the collector
terminal.
The reason for the relative ease with which the
majority carriers can cross the reverse-biased
junction is easily understood if we consider that
for the reverse-biased diode the injected
majority carriers will appear as minority
carriers in the n -type material
 TRANSISTOR OPERATION
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Applying Kirchhoff’s current law to the transistor

• IB ----------microamperes,
• IC & IE -------milliamperes
As mentioned before, IB is very small
compared to IE or IC. The capital-letter
subscripts indicate dc values.
 TRANSISTOR OPERATION
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DC Beta (βdc)and DC Alpha (αdc)

The ratio of the dc collector current IC (to the dc base current (lB) is
the dc beta (βdc), which is the de current gain of a transistor.
βdc = IC/IB
Typical values of βdc range from less than 20 to 200 or higher.
The ratio of the dc collector current (IC) to the dc emitter current (IE) is
the dc alpha (αdc or α ). The alpha is a less-used parameter than
beta in transistor circuits.
αdc = IC/IE

Typically, values of αdc range from 0.95 to 0.99 or greater, but αdc
is always less than 1.
The reason is that IC is always slightly less than IE by the amount of lB.
 TRANSISTOR OPERATION
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Current and Voltage Analysis

Three transistor dc currents and three dc
voltages can be identified.
IB : dc base current
IE: dc emitter current
IC: dc collector current
VBE : dc voltage at base with respect to emitter
VCB : dc voltage at collector with respect to base
VCE : dc voltage at collector with respect to
emitter
VBB forward-biases the base-emitter junction, and VCC reverse-biases the
base-collector junction. When the base-emitter junction is forward -
biased, it is like a forward-biased diode and has a nominal forward
voltage drop of ; VBE = 0.7 V
 TRANSISTOR OPERATION
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Current and Voltage Analysis

We will use VBE equal to 0.7 V throughout this text in order to simplify the analysis of
the basic concepts.
Since the emitter is at ground (0 V), by Kirchhoff's voltage law, the voltage across RB is
VRB = VBB - VBE
Also, by Ohm's law,
VRB = IB*RB
Substituting for VRB yields
IB *RB = VBB - VBE
Solving for IB ,
IB = (VBB – VBE)/RB

The voltage at the collector with respect to the grounded emitter is

VCE = VCC - VRC
Since the drop across RC is
VRC = IC*RC
 TRANSISTOR OPERATION
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Current and Voltage Analysis

the voltage at the collector can be written a:

VCE = VCC – IC*RC
 TRANSISTOR OPERATION
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Example :
Determine IB, IC, IE, VBE, VCE, and VCB in the circuit of the Figure.
The transistor has a β = 150.
Solution
 Transistor types and biasing
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The bipolar transistors have the ability to operate within three

different regions:

• Active Region :- the transistor operates as an amplifier and

• Saturation Region :- the transistor is “Fully-ON” operating

as a switch and

• Cut-off Region :- the transistor is “Fully-OFF” operating as

a switch and
 Transistor types and biasing
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In previous slide, we known that transistor can operate in any

of three regions of operation namely cutoff, active region and
saturation. To operate the transistor in these regions the two
junction of a transistor should be forward or reversed biased as
shown in table.

Base –
Collector –
Region Emitter Application
Base junction
Junction
Cutoff Reverse Reverse Switch
Saturation Forward Forward Switch
Active Reverse Forward Amplifier
 Transistor operation region
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• Active region
• This is also called as linear region. A transistor while in this region, acts better
as an Amplifier. This region lies between saturation and cutoff. The transistor
operates in active region when the emitter junction is forward biased and
collector junction is reverse biased. In the active state, collector current is β
times the base current, i.e.,

𝒄 𝑩

Where,
𝒄 = collector current
= current amplification factor
𝑩 = base current
 Transistor operation region
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• Saturation region
This is the region in which transistor tends to behave as a closed switch. The
transistor has the effect of its collector and Emitter being shorted. The collector
and Emitter currents are maximum in this mode of operation. The transistor
operates in saturation region when both the emitter and collector junctions are
forward biased. (In saturation region the transistor tends to behave as a closed
switch),

𝒄 𝑬

Where,
𝒄 = collector current and
𝑬 = emitter current
 Transistor operation region
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• Saturation region
This is the region in which transistor tends to behave as a closed switch. The
transistor has the effect of its collector and Emitter being shorted. The collector
and Emitter currents are maximum in this mode of operation. The transistor
operates in saturation region when both the emitter and collector junctions are
forward biased. (In saturation region the transistor tends to behave as a closed
switch),

𝒄 𝑬

Where,
𝒄 = collector current and
𝑬 = emitter current
 Transistor operation region
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• Cutoff region
• This is the region in which transistor tends to behave as an open
switch. The collector, emitter and base currents are all zero in this
mode of operation.
 Transistor Operation Region
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 Transistor Operation Region
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 Bipolar Transistor Configurations
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Bipolar Transistor
Configurations

Common Common Common

Base Emitter Collector
Configuration Configuration Configuration
 Bipolar Transistor Configurations
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COMMON-BASE CONFIGURATION

The common-base terminology is derived from

the fact that the base is common to both the
input and output sides of the configuration

The input set for the common-base amplifier

as shown in Fig. 3.7 relates an input current ( IE ) to an
input voltage ( VBE ) for various levels of output voltage (
VCB ).
 Bipolar Transistor Configurations
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COMMON-BASE CONFIGURATION

The input set for the common-base

amplifier as shown in Fig. 3.7
relates an input current ( IE ) to an
input voltage ( VBE ) for various
levels of output voltage ( VCB ).
 Bipolar Transistor Configurations
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COMMON-BASE CONFIGURATION

The output set relates an

output current ( I C ) to an
output voltage ( V CB ) for
various levels
of input current ( I E ) as
shown in Fig. 3.8 . The
output or collector set of
characteristics has
three basic regions of
interest, as indicated in Fig.
3.8 : the active , cut-off , and
saturation
 Bipolar Transistor Configurations
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COMMON-BASE CONFIGURATION

The proper biasing of the common-base configuration in the active region can be
determined quickly using the approximation IC  IE and assuming for the moment
that IB  0 mA. The result is the configuration of Fig. 3.11 for the pnp transistor.
The arrow of the symbol defines the direction of conventional flow for IE IC. The
dc supplies are then inserted with a polarity that will support the resulting current
direction
 Bipolar Transistor Configurations
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COMMON-EMITTER CONFIGURATION
 Bipolar Transistor Configurations
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COMMON-EMITTER CONFIGURATION
In the active region of a common-emitter amplifier, the base–emitter junction is
forward-biased, whereas the collector–base junction is reverse-biased.

A- Using the characteristics of Fig.

3.13 , determine I C at I B 30 mA
and V CE 10 V.

Answer
At the intersection of IB 30 mA and VCE
10 V, IC 3.4 mA .
 Bipolar Transistor Configurations
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COMMON-EMITTER CONFIGURATION

DC Mode In the dc mode the

levels of IC and IB are related
by a quantity called beta and
defined by the following
equation:
where I C and I B are determined at a particular operating point on the
characteristics.
 Bipolar Transistor Configurations
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A relationship can be developed between β and α using the basic relationships

introduced thus far.
Using β = IC/IB, we have IB = IC/ β, and from α = IC/IE we have
IE = IC/a. Substituting into
 Bipolar Transistor Configurations
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COMMON-COLLECTOR CONFIGURATION

For the common-collector configuration

the output characteristics are a plot of
IE versus VCE for a range of values of
IB . The input current, therefore, is the
same for both the common emitter and
common-collector characteristics.
 Bipolar Transistor Configurations
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1. Linear-region operation:
Base–emitter junction forward-biased
Base–collector junction reverse-biased

2. Cutoff-region operation:
Base–emitter junction reverse-biased
Base–collector junction reverse-biased

3. Saturation-region operation:
Base–emitter junction forward-biased
Base–collector junction forward-biased
 Bipolar Transistor Configurations
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Fixed bias
Emitter bias
Voltage divider
collector feedback
Emitter feedback
Common base
 Bipolar Transistor Configurations
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Fixed bias
The fixed-bias circuit of Figure
is the simplest transistor dc bias
configuration. Even though the
network employs an npn
transistor, the equations and
calculations apply equally well
to a pnp transistor configuration
merely by changing all current
directions and voltage polarities
 Bipolar Transistor Configurations
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Fixed bias
 Bipolar Transistor Configurations
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Fixed bias
Writing Kirchhoff’s voltage equation
in the clockwise direction for the loop, we obtain

because the supply voltage VCC and the

base–emitter voltage VBE are constants, the
selection of a base resistor RB sets the level
of base current for the operating point.
 Bipolar Transistor Configurations
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Fixed bias
- the base current is controlled by the level of RB
- IC is related to IB by a constant β,
- the magnitude of IC is not a function of the
resistance RC
- Changing RC to any level will not affect the level of
IB or I C as long as we remain in the active region
of the device.
- the level of R C will determine the magnitude of
VCE
 Bipolar Transistor Configurations
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Fixed bias

Since VE=0
 Bipolar Transistor Configurations
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Fixed bias

Since VE=0
 Bipolar Transistor Configurations
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Fixed bias
 Bipolar Transistor Configurations
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Fixed bias

with the negative sign revealing that the junction

is reversed-biased, as it should be for linear
amplification.
 Bipolar Transistor Configurations
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Fixed bias
Transistor Saturation
• The term saturation is applied to any system where levels have
reached their maximum values.
• For a transistor operating in the saturation region, the current is a
maximum value for the particular design.
• the highest saturation level is defined by the maximum collector
current as provided by the specification sheet.
• the collector-to-emitter voltage is at or below VCEsat.
• the collector current is relatively high on the characteristics.
 Bipolar Transistor Configurations
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Fixed bias
Transistor Saturation
For the fixed-bias configuration of Figure , the short
circuit has been applied, causing the voltage across RC
to be the applied voltage VCC .

ICsat is known, the maximum possible collector current

for the chosen design and the level to stay below if we
expect linear amplification.
 Bipolar Transistor Configurations
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Fixed bias
Transistor Saturation

Remember that ICQ = 2.35 mA

 Bipolar Transistor Configurations
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Fixed bias
Load-Line Analysis
The load resistor RC for the fixed-bias configuration will define the slope of the
network equation and the resulting intersection between the two plots.
 Bipolar Transistor Configurations
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Fixed bias
Load-Line Analysis
 Bipolar Transistor Configurations
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Fixed bias
Load-Line Analysis

If the level of I B is changed by varying the

value of R B , the Q -point moves up or
down the load line
 Bipolar Transistor Configurations
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Fixed bias
Load-Line Analysis

If V CC is held fixed and R C

increased, the load line will shift as shown
in Fig
 Bipolar Transistor Configurations
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Fixed bias
Load-Line Analysis
If I B is held fixed, the Q -point will move as shown in the same figure. If RC is
fixed and VCC decreased, the load line shifts as shown in Fig
 Bipolar Transistor Configurations
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Fixed bias
Load-Line Analysis
EXAMPLE 4.3 Given the load line of Fig. 4.16 and the defined Q -point, determine
the required values of V CC , R C , and R B for a fixed-bias configuration.