High Speed Switching Transistor

Features
•  NPN Silicon Planar Switching Transistor
•  Fast switching devices exhibiting short turn-off and low saturation voltage characteristics
•  Switching and Linear application DC and VHF Amplifier applications

Specification Table
Vce(sat) toff
Vceo Ic hfe Ptot Package
Max. Max.
Max. Max. Min. at 25°C and
(V) (ns)
(V) (A) at Ic = 150mA (mW) Pin Out
at Ic = 150mA at Ic = 150mA
40 0.8 0.3 60 100 500 TO-18

Absolute Maximum Ratings

Parameter Symbol Rating Unit
Collector - Emitter Voltage Vceo 40
Collector - Base Voltage Vcbo 75 V
Emitter - Base Voltage Vebo 6
Collector Current Continuous Ic 800 mA
Power Dissipation at Ta = 25°C 500 mW
Pd
       Derate above 25°C 2.28 mW / °C
Power Dissipation at Tc = 25°C 1.2 W
Pd
       Derate above 25°C 6.85 mW / °C
Operating and Storage Junction
Tj, Tstg -65 to +200 °C
Temperature Range

Electrical Characteristics (Ta = 25°C unless otherwise specified)

Value
Parameter Symbol Test Condition
Minimum Maximum Unit
Collector - Emitter Voltage Vceo Ic = 10mA, Ib = 0 40 -
Collector - Base Voltage Vcbo Ic = 10μA, Ie = 0 75 - V
Emitter - Base Voltage Vebo Ie = 10μA, Ic = 0 6 -
Vcb = 60V, Ie = 0 10 nA
Icbo Ta = 150°C
Collector - Cut off Current -
Vcb = 60V, Ie = 0 10 μA
Icex Vce = 60V, Veb = 3V 10 nA
Emitter - Cut off Current Iebo Veb = 3V, Ic = 0 - 10
nA
Base - Cut off Current Ibl Vce = 60V, Veb = 3V - 20
Ic = 150mA, Ib = 15mA - 0.3
Collector Emit >35 ter Saturation Voltage *Vce (Sat)
Ic = 500mA, Ib = 50mA - 1
V
Ic = 150mA, Ib = 15mA - 0.6 to 1.2
Base Emitter Saturation Voltage *Vbe (Sat)
Ic = 500mA, Ib = 50mA - 2

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High Speed Switching Transistor

Electrical Characteristics (Ta = 25°C unless otherwise specified)

Parameter Symbol Test Condition Rating Unit
Ic = 0.1mA, Vce = 10V >35
Ic = 1mA, Vce = 10V >50
Ic = 10 mA, Vce = 10V >75
Ta = 55°C
DC Current Gain hfe -
Ic = 10mA, Vce = 10V >35
Ic = 150mA, Vce = 10V 100 to 300
Ic = 150mA, Vce = 1V >50
Ic = 500mA, Vce = 10V >40
Dynamic Characteristics
ALL F = 1kHz
Ic = 1mA, Vce = 10V 50 to 300
Small Signal Current Gain hfe -
Ic = 10mA, Vce = 10V 75 to 375
Ic = 1mA, Vce = 10V 2 to 8
Input Impedance hie kΩ
Ic = 10mA, Vce = 10V 0.25 to 1.25
Ic = 1mA, Vce = 10V <8
Voltage Feedback Ratio hre x10-4
Ic = 10mA, Vce = 10V <4
Ic = 1mA, Vce = 10V 5 to 35
Output Admittance hoe umhos
Ic = 10mA, Vce = 10V 25 to 200
Ie = 20mA, Vcb = 20V
Collector Base Time Constant rb'Cc <150 ps
f = 31.8MHz
Dynamic Characteristics
Real Part Common - Emitter High Frequency Re (hie) Ic = 20mA, Vce = 20V <60 Ω
Input Impedance - f = 300MHz - -
Ic = 100μA, Vce = 10V
Noise Figure Nf <4 dB
Rs = 1kΩ, f = 1kHz
Ic = 20mA, Vce = 20V
Transistors Frequency ft >300 MHz
f = 100MHz
Vcb = 10V, Ie = 0
Output Capacitance Cob <8
f = 100kHz
pF
Veb = 0.5V, Ic = 0
Input Capacitance Cib <25
f = 100kHz
Switching Time
Delay Time td Ic = 150mA, IB1 = 15mA <10
Rise Time tr Vcc = 30V, Vbe = 0.5V <25
ns
Storage Time ts Ic = 150mA, IB1 = <225
Fall Time tf IB2 = 15mA, Vcc = 30V <60

*Pulse Condition: Pulse Width = 300μs, Duty Cycle = 2%

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 High Speed Switching Transistor

TO-18 Metal Can Package

Dimensions Minimum Maximum
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.4 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.7 -
L 45°
Dimensions : Millimetres

Material content declaration of TO-18

1pc weight: 0.3092gm
Substance make Chemical Amount of
Components CAS Number
up of Material Composition substances (gm)
Fe
7439-89-6
KOVAR, Ni 29
Header/cap 7440-02-0 0.2889gm
CRS1010 Co 18
7440-48-4
Glass
Chip Silicon Si 7440-21-3 0.0031gm
Bonding Wire Aluminium (Al) Al 7429-90-05 0.00089gm
Tin Plating Pure Tin Sn 7440-31-5 0.0074gm

Part Number Table

Description Part Number
Bipolar (BJT) Single Transistor, NPN,
2N2222A
40V, 300MHz, 1.2W, 800mA

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negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019.

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