1N60/1N60P Schottky Diode Datasheet
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geridalt1N60/1N60P Schottky Diode Datasheet
Uploaded by
geridaltFMS 1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage 1N60 VRRM 40 V
1N60P VRRM 45 V
Peak forward surge current tp≦1 s 1N60 IFSM 150 mA
1N60P IFSM 500 mA
Forward continuous current Ta=25℃ 1N60 IF 30 mA
1N60P IF 50 mA
Storage temperature range Tstg -65~+125 ℃
Maximum Thermal Resistance
Tj=25℃
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mm×50mm×1.6mm RthJA 250 K/W
Formosa MicroSemi CO., LTD.
[Link] Rev. 2, 22-Nov-2002
1/2
FMS 1N60/1N60P
Electrical Characteristics
Tj=25℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1mA 1N60 VF 0.32 0.5 V
1N60P VF 0.24 0.5 V
IF=30mA 1N60 VF 0.65 1.0 V
IF=200mA 1N60P VF 0.65 1.0 V
Reverse current VR=15V 1N60 IR 0.1 0.5 μA
1N60P IR 0.5 1.0 μA
Junction capacitance VR=1V, f=1MHz 1N60 CJ 2.0 pF
VR=10V, f=1MHz 1N60P CJ 6.0 pF
Reverse recovery time IF=IR=1mA Irr=1mA RC=100Ω trr 1.0 ns
Dimensions in mm
Standard Glass Case
JEDEC DO 35
Formosa MicroSemi CO., LTD.
[Link] Rev. 2, 22-Nov-2002
2/2
