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D882 NPN Transistor Production Specs

This document provides specifications for an NPN silicon epitaxial planar transistor. It lists features, applications, ordering information, maximum ratings, electrical characteristics, classification ranges, typical characteristics, and package outline dimensions.

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Asdrubal Parejo
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0% found this document useful (0 votes)
49 views4 pages

D882 NPN Transistor Production Specs

This document provides specifications for an NPN silicon epitaxial planar transistor. It lists features, applications, ordering information, maximum ratings, electrical characteristics, classification ranges, typical characteristics, and package outline dimensions.

Uploaded by

Asdrubal Parejo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Production specification

NPN Silicon Epitaxial Planar Transistor D882

FEATURES
Pb
z Low saturation voltage.
Lead-free
z Excellent hFE linearity and high hFE.
z Less cramping space required due to small and thin
Package and reducing the trouble for attachment to a
radiator.

APPLICATIONS
z Power amplifier application. SOT-89

ORDERING INFORMATION
Type No. Marking Package Code

D882 D882 SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage 30 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current -Continuous 3 A

PC Collector Dissipation 500 mW

Tj,Tstg Junction and Storage Temperature -55 to +150 ℃

E009 [Link]
Rev.A 1
Production specification

NPN Silicon Epitaxial Planar Transistor D882

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V

Collector cut-off current ICBO VCB=40V,IE=0 1 μA

Collector cut-off current ICEO VCE=30V,IB=0 1 μA

Emitter cut-off current IEBO VEB=3V,IC=0 1 μA

VCE=2V,IC=20mA 30 150
DC current gain hFE
VCE=2V,IC=1A 60 160 400

Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.3 0.5 V

Base-emitter saturation voltage VBE(sat) IC=2A, IB=0.2A 1.0 2.0 V

Transition frequency fT VCE=5V, IC= 0.1A 90 MHz

Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 45 pF

CLASSIFICATION OF hFE
Rank R Q P E

Range 60-120 100-200 160-320 200-400

E009 [Link]
Rev.A 2
Production specification

NPN Silicon Epitaxial Planar Transistor D882

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

E009 [Link]
Rev.A 3
Production specification

NPN Silicon Epitaxial Planar Transistor D882

PACKAGE OUTLINE
Plastic surface mounted package SOT-89

A SOT-89
H C
Dim Min Max
A 4.30 4.70
B 2.25 2.65

B C 1.50 Typical
K
D 0.40 Typical
E 1.40 1.60
L
F 0.48 Typical
E D H 1.60 1.80
J 0.40 Typical
L 0.90 1.10
K 3.95 4.35
F J
All Dimensions in mm

SOLDERING FOOTPRINT
0.90

45°
2.20

45°
0.90
1.50

1.00 1.00
Unit:mm
1.50 1.50

PACKAGE INFORMATION
Device Package Shipping

D882 SOT-89 1000/Tape&Reel

E009 [Link]
Rev.A 4

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