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Manuscript_e2d986c2732e2cf715135ca9cd9f2484

Plasmonic Metasurface with Quadrilateral Truncated

Cones for Visible Perfect Absorber
Yicheng Wang, Kunlin Chen, Yu-Sheng Lin*, and Bo-Ru Yang*
School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China.
* linyoush@[Link]; yangboru@[Link]

Abstract:
Solar radiation is mainly concentrated in the visible and infrared spectra ranges, and its
perfect absorption has great significance to solar cell, energy harvester, emitter, perfect stealth,
and hot-electron device fields. In this study, we theoretically design and numerically demonstrate
a highly efficient broadband visible perfect absorber (VPA) using plasmonic metasurface, which
consists of quadrilateral truncated cones configuration. The electromagnetic properties of VPA
are discussed by changing the geometrical parameters, especially to the absorption intensity of
VPA. VPA processes perfect absorption (100%) at the wavelength of 490 nm and the minimum
absorption is 99.51% at the wavelength of 772 nm. The averaged absorption is 99.91% spanned
the whole visible spectrum. The excellent absorption performance is revealed by the Fabry-Perot
resonance, localized surface plasmon resonance (SPR), and propagating SPR. VPA exhibits
ultrahigh absorption, wide incident angle, and polarization-independent characteristics. It proves
that the designed VPA has great potential in thermal photovoltaics and energy harvesting
applications.

Keywords: metamaterial; metasurface; perfect absorber; localized surface plasmon resonance

1. Introduction
Since N. Landy proposed the concept of perfect metamaterial absorber in 2008 [1], it has attracted
great attention due to its enormous potential applications in sensing [2-11], solar energy harvesting [12-
15], waveguiding [16], spatial light modulating [17,18], optical filtering [19-24], and perfect cloaking
[25,26] fields. It is well-known that metamaterial is a kind of emerging artificial material composed of
periodic or aperiodic structures with subwavelength feature sizes. It shows unique electromagnetic
resonance [27] and has been demonstrated to span broad spectra range from radio [28], microwave [29-

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31], terahertz (THz) [32,33], mid-infrared (MIR) [34], near-infrared (NIR) [35,36], to visible [37-40]
waves.
Recently, metamaterial perfect absorbers have attracted significant attention and explored a rapid
development [41]. Surface plasmon is a surface electromagnetic mode produced by the electromagnetic
coupling effect and the collective electronic oscillations on the metal surface [42,43]. The incident
electromagnetic energy can be confined within the subwavelength structures by surface plasmon
polaritons (SPP). The optical properties of SPP can be controlled by the metamaterial pattern, size, and
composition [44]. Y. Liu et al. proposed an ultra-broadband perfect absorber utilizing a multi-size
rectangular structure to perform near-perfect absorption [45]. However, it could be easily oxidized
exposing on the air because of the Fe composition. H. Gao et al. proposed an ultra-broadband perfect
absorber consisting of SiO2 and Ti elliptic cylinder configuration. It shows ultrahigh absorption intensity
in the near-infrared wavelength region, but the absorption intensity in the visible wavelength region is
lower [46]. Some existing broadband absorbers also have limitations, such as incident angle sensitivity,
low absorption, and difficult manufacturing characteristics. Additionally, most of the traditional
plasmonic materials, such as Au, Ag, and Al, are poorly thermal stable and highly cost [47-49]. In
contrast, some of them, such as TiN, Ti, Cr, Sn, and Ni, could be designed to have a broader resonant
spectrum [50,51]. The latter plasmonic materials make it possible to design broadband, high performance,
and cost-effective perfect absorbers.
In this study, a visible perfect absorber (VPA) using plasmonic metasurface is proposed to tailor
quadrilateral truncated cones configuration, which is composed of gallium arsenide-titanium (GaAs-Ti)
and silica (SiO2) layers on the copper (Cu) substrate. The electromagnetic responses of the VPA are
simulated by using Lumerical Solution’s three-dimensional finite-difference time-domain (FDTD) based
numerical simulations. Perfectly matched layer (PML) boundary condition and the propagation direction
of incident electromagnetic plane wave are adopted in the z-axis direction. The periodic boundary
conditions are adopted in the x- and y-axis directions. According to the localized surface plasmon
resonance (SPR), the electric (E) and magnetic (H) fields of the incident wave could be confined within
the VPA structures.

2. Designs and methods

Fig. 1(a) shows the schematic drawing of the proposed VPA, which is composed of GaAs-
Ti and SiO2 on the Cu substrate. The incident light is along the normal z-axis direction. The
polarization states are also illustrated in Fig. 1(a), which are TE-polarization and TM-polarization
waves along the x-axis and y-axis, as highlighted as the blue and red arrows, respectively. The top
two layers of VPA are tailored by quadrilateral truncated cones made of GaAs and Ti materials.
The embedded SiO2 nanograting layer within the Ti layer is an anti-reflection layer. The
polarization and incident angles are defined as φ and θ, respectively. The top view of geometrical
parameters of the VPA unit cell is illustrated in Fig. 1(b). The period is defined as p. The top and
bottom lengths of the GaAs quadrilateral truncated cone are defined as l1 and l2, respectively. The
top and bottom lengths of the Ti quadrilateral truncated cone are defined as l2 and l3, respectively.
Fig. 1(c) shows the cross-sectional view of the VPA unit cell. The thicknesses of GaAs, Ti, and
SiO2 layers are defined as h1, h2, and h3, respectively. The initial geometrical parameters are kept
as constant as p = 300 nm, l1 = 100 nm, l2 = 130 nm, l3 = 270 nm, h1 = 70 nm, h2 = 65 nm, h3 = 35
nm and h4 = 130 nm, when exploring the influence of one of these parameters to absorption
spectrum. Since the Cu substrate blocks the transmission (T) of the incident light, the high
absorption (A) of VPA can be achieved by low reflection (R), i.e., A = 1 - R. The absorption light
at the resonance ( ) can be expressed as:
2
=2 / [( − 0) + ( + ) 2] (1)
where 0 is the resonance, and represent the radiation and the dissipative loss rates,
respectively. It can be seen that the absorption intensity reaches its maximum at the resonance,
i.e., = 0, and the resonant peak ( 0) is determined by the ratio of and . When = (a
condition that is known as critical coupling), there is a theoretical maximum value of 0 = 50%.
In order to overcome the 50% limit for a thin film illuminated by a single source, the common
scheme is to add a mirror into the system [37]. This changes the system from a two-port system
to a one-port system. In this design, by adding SiO2 anti-reflection layer on Cu substrate,
transmission is completely canceled. The materials we selected are Ti and GaAs, the broadband
perfect absorption can be attributed to the high intrinsic loss of Ti material, and the cooperative
effects of propagating SPR, localized SPR, and Mie resonance excited by cone structures. GaAs
exhibits large free carrier concentrations in the visible spectrum. The Fabry-Perot cavities formed
by Ti and GaAs become another contribution for the perfect absorption.
Fig. 1(a) 3D schematic drawing, (b) top view, and (c) cross-sectional view of the proposed VPA.

3. Results and discussions

To illustrate the absorption performance of the VPA in the visible spectrum, the dashed lines
are used to separate the visible wavelength range. They are the wavelength ranges of 300 nm to
400 nm and 800 nm to 1200 nm, respectively in Fig. 2-6. Fig. 2 shows the material influences of
absorption characteristics on VPA performance. The Ti and GaAs layers in Fig. 1(a) are denoted
as material (A) and material (B), respectively. To discuss the influence of different materials of A
and B. Fig. 2(a) shows the absorption spectra of VPA with different A materials using Ti, Ag, Au,
Al, Sn, and Si in TE mode. The best absorption characteristic of VPA is attained using Ti material.
It can reach perfect absorption up to 100% spanned the entire visible spectrum, and the averaged
absorption intensity in the wavelength range of 300 nm to 1200 nm is 97.1%. Fig. 2(b) shows the
absorption spectra of VPA with different B materials using GaAs, Sn, Ti, Au, Al, and air in TE
mode. The best absorption characteristics of VPA is attained using GaAs material. It can reach
perfect absorption about 100% spanned the entire visible spectrum. Ti and its composite materials
have been explored with strong plasmonic resonant behaviors due to the imaginary part of the
permittivity [52]. The broadband perfect absorption can be attributed to the high intrinsic loss of
Ti material, and further enhanced the absorption by the cooperative effects of propagating SPR,
Mie resonance, and localized SPR. Moreover, Ti is the tenth most abundant element on earth. It
shows high mechanical stability, a high melting point of 1688°C, and low mass density
characteristics. It is also chemically stable at room temperature. These characteristics make it
widely used in the aeronautics and astronautics fields, and it is also a suitable kind of material for
plasmonic absorbers. GaAs exhibits large free carrier concentrations in the visible spectrum with
good thermal durability, which makes it ideal for high-temperature applications such as thermal
photovoltaics and solar energy collection. Furthermore, the Fabry-Perot cavities formed by Ti and
GaAs materials become another contribution for the perfect absorption.

1.05
1.0 Material (A) Material (B)
Ti 1.00 GaAs
0.8 Ag
Absorption (a.u.)

Ti

Absorption (a.u.)
0.95
Al Sn
0.90
0.6 Au Au
Si 0.85 Al
0.4 Sn 0.80
Air

0.75
0.2
0.70
0.0
(a) (b)
0.65
0.4 0.6 0.8 1.0 1.2 0.4 0.6 0.8 1.0 1.2
Wavelength (μm) Wavelength (μm)

Fig. 2. Absorption spectra of VPA composed of different (a) material (A) and (b) material (B) in
TE mode.

Fig. 3(a) shows the absorption spectra of VPA with different p values at normal incident TE-
polarization light. The perfect visible absorption is realized under the condition of p = 300 nm. It
is because an excessively large gap between each unit cell would weaken SPR. By gradually
increasing p values from 300 nm to 600 nm, the absorption intensity significantly declines from
1.0 to 0.2, and the resonances are red-shifted from the wavelength of 600 nm to 700 nm. The
averaged absorption intensity is higher than 0.7 in the blue spectrum range (400 nm – 600 nm).
Fig. 3(b) shows the absorption spectra of VPA with different l3 values. The perfect visible
absorption is performed under the conditions of l3 = 270 nm and l3 = 300 nm.
 1.0 p (nm) 1.0 l3 (nm)
300 150
360 0.8
Absorption (a.u.)

Absorption (a.u.)
0.8 180
420 210
480 0.6 240
0.6
540 270
600 0.4 300
0.4

0.2
0.2
(a) 0.0
(b)
0.4 0.6 0.8 1.0 1.2 0.4 0.6 0.8 1.0 1.2
Wavelength (μm) Wavelength (μm)

Fig. 3. Absorption spectra of VPA with different (a) p values from 300 nm to 600 nm and (b) l3
values from 150 nm to 300 nm at normal incident light.

To further discuss the effect of different h1 and h3 values on VPA, the absorption spectra of
VPA at normal incident TE-polarization light with different h1 and h3 values are shown in Fig. 4(a)
and (b), respectively. In Fig. 4(a), the absorption intensities of VPA are slightly influenced while
changing h1 values from 50 nm to 100 nm and are consistently above 97% in the visible spectrum
region. The perfect visible absorption among them is under the condition of h1 = 70 nm. Fig. 4(b)
shows the absorption spectra of VPA with different h3 values from 35 nm to 235 nm. The
absorption intensity is rapidly decreased around the wavelength range of 600 nm to 1000 nm. By
increasing the h3 value, the maximum absorption intensity is obtained when h3 = 35 nm. It is
because the reflection reduced by SiO2 anti-reflection layer and then the absorption is increased. It
would weaken the SPR by excessively thickening the anti-reflection layer.
 1.05
1.0
1.00
Absorption (a.u.)

Absorption (a.u.)
0.95 0.8

0.90
h1 (nm) h3 (nm)
50 0.6 35
0.85 60 75
70 0.4 115
0.80
80 115
0.75 90 195
0.2
(a) 100 (b) 235
0.70
0.4 0.6 0.8 1.0 1.2 0.4 0.6 0.8 1.0 1.2
Wavelength (μm) Wavelength (μm)

Fig. 4. Absorption spectra of VPA with different thicknesses of (a) h1 and (b) h3 values at normal
incidence of TE polarization light.

The proposed VPA exhibits polarization-independent characteristic due to its periodic

symmetrical structure [53]. By gradually expanding l1, l2, and l3 values along the y-axis direction from
the original values to 300 nm while keeping other parameters as constants along the x-axis direction to
perform the one-dimension (1D) nanograting as shown in Fig. 5(b). The absorption spectra of VPA with
different quadrilateral truncated cones features at normal incidence in TE and TM modes are shown in
Fig. 5(a) and Fig. 5(b), respectively. In TE mode, by increasing l1, l2, and l3 values along the y-axis
direction, the absorption intensity is kept over 95% in the wavelength range from 400 nm to 550 nm. It
drops to about 80% in the wavelength range from 700 nm to 1000 nm as shown in Fig. 5(a). In TM mode,
the absorption intensity reduces in the wavelength range from 600 nm to 800 nm while it is still around
70% in the wavelength range from 400 nm to 550 nm as shown in Fig. 5(b). It is because the asymmetric
1D nanograting configuration is strongly polarization-dependence. By changing the polarization angle,
the interaction between the incident electromagnetic wave and VPA is different. These results indicate
that VPA can be designed to possess the polarization-independent to polarization-dependent characteristic
by prolonging the features of truncated cones. Therefore, when VPA is tailored with 1D nanograting
structures, the absorber and polarizer characteristics can be realized simultaneously.
Fig. 5. Absorption spectra of VPA with different quadrilateral truncated cones features from 2D
to 1D nanograting at normal incidence in (a) TE and (b) TM modes.

Fig. 6(a) shows the absorption spectra of VPA at different incident angles (θ) in TE mode. The
averaged absorption intensity in the visible spectrum region is up to 99.91% at normal incidence (θ =
0°). Under the condition of θ = 60°, The averaged absorption intensity in the visible spectrum region can
reach up to 94.8%. This indicates the proposed VPA can be used in the wide-angle of incident
wavelength to possess the omnidirectional characteristic. Fig. 6(b) shows the absorption spectra of VPA
with 1D nanograting configuration at different polarization angles (φ). By gradually increasing the φ
value from 0° to 90 °, the absorption intensity strongly declines in the wavelength range from 600 nm to
1000 nm. It indicates that VPA with 1D nanograting configuration exhibits higher absorption intensity at
a smaller φ value. These results agree well with those in Fig. 5(b).
 1.0
1.0
0.9
Absorption (a.u.)

Absorption (a.u.)
0.8
θ φ
0.7
0° 0°
10° 0.6 15°
0.8
20° 0.5 30°
30° 45°
0.4
40° 60°
50° 0.3 75°
(a) 60° 0.2 (b) 90°
0.6
0.4 0.6 0.8 1.0 1.2 0.4 0.6 0.8 1.0 1.2
Wavelength (μm) Wavelength (μm)

Fig. 6. Absorption spectra of VPA with different (a) incident angles (θ) from 0° to 60 °and (b)
polarization angles (φ) from 0° to 90°.

In order to better interpret and illustrate the absorption spectra of VPA, the physical mechanism of
the proposed VPA can be explained by the interaction of propagating SPR, localized SPR, Mie resonance,
and Fabry-Perot resonance. The absolute E- and H-field distributions under the wavelength of 800 nm
of VPA in TE and TM modes are plotted in Fig. 7 and Fig. 8, respectively. The white dotted lines in Fig.
7 are the SiO2 material embedded in the Ti quadrilateral truncated cone structures. It is observed that the
E-field energy of the main resonance of VPA in TE mode strongly bounded to the two edges of the Ti
quadrilateral truncated cone structure, and there is no E-field energy distribution inside the VPA. It
shows the localized SPR coupled in the interface of metal and semiconductor layers. In addition to the
typical Mie resonance generated from two pillars of dissimilar materials, the Mie resonances of dielectric
and metallic patterns occur complementarily at different wavelengths to realize broadband absorption
over the entire visible spectrum range. While the H-field energy is concentrated inside of the Ti
quadrilateral truncated cone along with the other two edges, this indicates that the energy is mainly
confined in the Fabry-Perot cavity and absorbed by the Ti quadrilateral truncated cone since the H-field
energy is much lower than E-field energy. The E- and H-fields distributions in TM mode are similar to
those in TE mode except the coupling effects rotated 90°. Fig. 8 shows the cross-sectional views of E-
and H-fields distributions of VPA in TE and TM modes, respectively. In TE mode, the E-field energy is
mainly distributed in the interface of GaAs and Ti quadrilateral truncated cones, while the H-field
energy is primarily confined in the pyramid structure and the SiO2 layer caused by the interaction of
Fabry-Perot resonance and propagating SPR. In TM mode, the E-field energy is accumulated around the
interface between GaAs and Ti layers, while the H-field energy is mainly confined in the pyramid
structure and the interface between GaAs and Ti quadrilateral truncated cones. It indicates that strong
resonance is excited by the localized SPR in the interface of metal and semiconductor layers and the
Fabry-Perot resonance excited in the SiO2 layer. Therefore, the perfect absorption of VPA can be
attributed to the interaction of the localized SPR, propagating SPR, Mie resonance, and Fabry-Perot
resonance.

Fig. 7. Top views of (a), (c) E-field and (b), (d) H-field distributions of the VPA in (a), (b) TE
and (c), (d) TM modes under the wavelength of 800 nm.

Fig. 8. Cross-sectional views of (a), (c) E-field and (b), (d) H-field distributions of the VPA in
(a), (b) TE and (c), (d) TM modes under the wavelength of 800 nm.

4. Conclusion
In conclusion, we present a design of VPA by using plasmonic metasurface. The proposed VPA is
composed of GaAs-Ti and SiO2 layers on the Cu substrate. VPA exhibits excellent absorption
intensity, incident angle insensitivity, and polarization independence characteristics. The averaged
absorption intensities of VPA in the visible spectrum region are 99.91%, 99.8%, and 94.7% at the
incident angles of 0°, 20°, and 60°, respectively. The averaged absorption intensity in the
wavelength range of 300 nm to 1200 nm is also up to 97.1%. VPA can be tailored to be composed
of 1D and 2D nanograting structures. It shows high absorption intensity in the wavelength range
from 400 nm to 550 nm and low absorption intensity in the wavelength range from 600 nm to 800 nm.
VPA can be designed to possess polarization-independent and polarization-dependent characteristics.
This design of the proposed VPA opens an avenue to the widespread optoelectronics applications, such as
energy harvesting, emitting, perfect cloaking, hot-electrons device, photodetector, and so on.

Acknowledgments. The authors acknowledge the financial support from Natural Science
Foundation of Basic and Applied Foundation of Guangdong Province (2021A1515012217),
National Key Research and Development Program of China (2019YFA0705004), National
Natural Science Foundation of China (11690031), and State Key Laboratory of Optoelectronic
Materials and Technologies of Sun Yat-Sen University for the use of experimental equipment.

Disclosures. The authors declare no conflicts of interest.

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