, Lf nc.
20 STERN AVE. TELEPHONE: (973) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (973) 376-8960
TYPES 2N4998, 2N5000, 2NS148, 2N5150
N-P-N SILICON POWER TRANSISTORS
HIGH-FREQUENCY POWER TRANSISTORS WITH
COMPUTER-DESIGNED ISOTHERMAL GEOMETRY
For Complementary Ute With 2N4999,2N5001, 2N5147, and 2N6149
6 mJ Revert* Energy Rating with IQ - 6 A and 4 V Ravarta Bias
•mechanical data
IN4MB, ZNMM ALL TERMINAL* ARE INSULATED FROM THE CASE
ALL JEDEC TO-SB DIMENSIONS AND NOT8S ARE APPLICABLE
NOTES; A, Within txii dlmantlpn. MM dlamatw may vary.
B. Position of twmlnalt with ratpact to haxagon It not controlled.
C. Tha eat4 tamparaiura may ba maaaurad anywhara on tha mtlng plana within
[Link] of th>nud.
D. All [Link] <ra In Inehat unlaat otnarwM ipaolflad.
2N514E, 2N81BO THE COLLECTO R 1$ IN ELECTRICAL CONTACT WITH THE CASE
ALL bIHINtlONi *•« IN IHCHtl
UHLI1I OTHIIVIII VtCIPIIa.
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE
absolute maximum ratings at 25°C case temperature (unleu otherwise noted)
2N4998 2N5148
2NSOOO 2NS150
Collector-Base Voltage . . •« 100 V* ••
Collector-Emitter Voltage (Set Not* 1) . . « 80V f
Emitter-Bale Voltage . . « 6V »
Continuous Collector Current . . , 2 A' 2 A'
Peak Collector Current (Sea Note 2) . 5 A' SA*
Continuous Base Current 1 A' 1 A'
Safe Operating Areas Sea Figures 7* and B
Continuous Device Dissipation at 50°C Case Temperature (See Note 3) 30 W* 6W*
Continuous Device Dissipation at 100°C Case Temperature (See Note 3) 20 W 4W
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 4) 2W 1 W
Undamped Inductive Load Energy (See Note 5) + ^emJ-^—•
Operating Collector Junction Temperature Range -65°C to 200°C*
Storage Temperature Range -65°C W200°C*
Lead or Terminal Temperature 1/8 Inch from Case for 60 Seconds • 300°C* »•
NOTES: 1. Thli value IppllMwhtn thl DM«-»mlit«r diode i» Qpvn-circuiHd.
2. Thit v*lu« ipplln for tw < B.3 mt, duty cvcl* < 1 %•
3. For optritlon abttva (or b«low) 5O°C CM! Mmpiraturv, r«1»r to DlHlpvtion Darkling CurvM Flgur» 9 and 10.
4. o*r»u llnHrly to 200°C fr«*-«lr timpcratvr* it tr>« r«t* of M.d mw/^C Tor 2NA9fia and ZNaadO, S.7 mW/'c for 2N514B ind
2N91EO.
B. This ritlng It p«Md on tft* eap*blllty ol th« trtntlnort to opwat* Hf«lv in thi unclampad indufitlw* load circuit ot Stctlon 3.2 of
th. forthcoming J6DEC publication Sufgtsltd Standards on Power Tnrutuonl. L-o.4BmH, R B B 1 -2Qn. Hgu-100(),
V B B I - I O v. v B B j - 4 [Link],-0.1 n, v cc - 10 v, ICM - • *• energy - \f3ui.
'JEOEC raglttarad data. Thla data thaat contalni all applieabla ragistarad data In affaet at tha tlma of publication.
T Thl* circuit appaan on pag« B-1 of thlt data book.
NJ Semiconductors reserves the nght to change test conditions, parameters limits and package dimensions without
not,ce mfonnation [Link] by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press However NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use N J
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TYPES 2N4998, 2NSOOO, 2NS148, ZN5150
N-P-N SILICON POWER TRANSISTORS
"electrical characteristics at 25°C case temperature (unless otherwise noted)
2N4S98 2NBOOO
PARAMETER TEST CONDITIONS 2N5141 2NS1BO UNIT
MIN MAX MIN MAX
Collector-Emitter
VIBRICEO Br.,kttown Volt ^
1C" 100mA, Ifl'O, See Note 6 80 SO V
'CEO Collector Cutoff Curftnt VCE • 40 v. IB - o 50 50 uA
VCE - 60 v. VBE - o 1 1 MA
ICES Collector Cutoff Current
VC6 - 100 V, VBE - 0 1 1 mA
'CEV Collector Cutoff Current vce • eo v, VBE * -2 v. TC - iso°c 500 500 HA
VEB-SV, ie-o 1 1 CA
'EBO Emitter Cutoff Current
Vf,B - 6 V . Ic - 0 1 1 mA
VC6 "5V, Ic • 50 mA 20 50
VCE - 5 V . IC-<A 30 9O 70 200
Static Forwerd Current See Notes
hep VCe - S V, Ic - 1 A 15 30
Transfer Ritio Band?
VCE " 5v' >C " 3 A 5 18
VCE - 5 V . IC-'A- TC--SS°C ts 36
IB- 100 mA, Ic- 1 A 1.2 1.2
l a -200mA. IC-2A Set Note* 1,5 1.5
VBE Bast-Emitter Volttgt V
VCE - 5 V, 'C • 2A 6 and 7 1.5 1.5
VCE-BV, IC-SA 3 3
IB -100mA. IC-'A 0.46 0.46
Cot lector -E mitter S*e Notts
IB -200mA, Ic-ZA 0.8S 0.8S V
VcElsat) Sa,uraticm voltage 6 end 7
! B -600mA, lc-3A 5 S
Small-Signal
Common-Emitter
hf. VCE - 5 v , [Link], t-ikHj 20 SO
Forward Currant
Transfer Ratio
Small-Signal
Common-Emitter
h«. VCE - 5 v , [Link], f»20MHi 25 3
Forward Current
Transfer Ratio
Common-Base
*-obo Open-Circuit VCB-IOV, IE-O. I-IMHZ 70 70 Pf
Output Capacitance
NOTES^ 6. Th«M pmr»mm*»rt mui *r*>d u»infl pulM tcch =• 300 Ui, d
7 Thin pejram«itir* vm r jvith vouio*-t*i\ttng c »f »t* fro orrvino corvticti »nd loc»i*d wlihin 0.125
Inch from th* davic* b
"JEOEC ragiti*r*d dal«
thermal characteristics
2N40M 2N514«
PARAMETER 2N6OOO 2N516O UNIT
MAX MAX
^(JJC Junction-to-Case Thermal Resistance 5 25
"C/W
RHJA Junction-io-Free-Air Thermal Resistanca 87.5 175
switching characteristics at 25° C cate temperature
ALL TYPES
PARAMETER TEST CONDITIONS' UNIT
TVP
ton Turn-On Time 1C - 2 A, Ip j i j - 200mA, Igj2) - -200mA, 0.1
»>
tgff Turn-Off Time VBEIoffl • '3.7 V. HL-15ll, See Figure 1 1.1
f VOstJg* and current [Link] shown are nominal; *xact v v with Tr*nsittor pBrw
