SM4337NSKP ®

N-Channel Enhancement Mode MOSFET

Features Pin Description

· 30V/55A, D D
D D
RDS(ON)=7.1mW (max.) @ VGS=10V
RDS(ON)=10mW (max.) @ VGS=4.5V
G Pin 1
· 100% EAS (UIS) test S S
S

· ESD Protection DFN5x6-8

· Lead Free and Green Devices Available (5,6,7,8)
DD DD
(RoHS Compliant)

Applications (4) G

· Power Management in Desktop Computer or

DC/DC Converters.
S S S
( 1, 2, 3 )

N-Channel MOSFET

Ordering and Marking Information

SM4337NS Package Code
KP : DFN5x6-8
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel (2500ea/reel)
Package Code Assembly Material
G : Halogen and Lead Free Device

SM4337NS KP : SM4337 XXXXX - Lot Code

XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ã Sinopower Semiconductor, Inc. 1 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

Common Ratings
VDS S Drain-Source Voltage 30
V
V GSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
IS Diode Continuous Forward Current TC =25°C 19
TC =25°C 55
ID Continuous Drain Current A
TC =100°C 35
IDMa Pulsed Drain Current TC =25°C 90
TC =25°C 32.1
PD Maximum Power Dissipation W
TC =100°C 12.8
RqJC Thermal Resistance-Junction to Case Steady State 3.9 °C/W
TA =25°C 16.2
ID Continuous Drain Current A
TA =70°C 12.9
TA =25°C 2.8
PD Maximum Power Dissipation W
TA =70°C 1.8
t £ 10s 20
RqJA Thermal Resistance-Junction to Ambient °C/W
Steady State 45
IAS b Avalanche Current, Single pulse L=0.1mH 27
b A
IAS Avalanche Current, Single pulse L=0.5mH 14
EAS b Avalanche Energy, Single pulse L=0.1mH 36
b mJ
EAS Avalanche Energy, Single pulse L=0.5mH 50
Note a: Maximum current is limited by bonding wire.
Note b: UIS tested and pulse width limited by maximum junction temperature 150o C (initial temperature Tj=25o C).

Copyright ã Sinopower Semiconductor, Inc. 2 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, I DS=250mA 30 - - V
Drain-Source Breakdown Voltage VGS=0V, I D(av al)=10A
BV DSSt 34 - - V
(transient) Tc ase =25°C, ttransient =100ns
VDS =24V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current mA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS =VGS, ID S=250mA 1.5 1.8 2.5 V
I GSS Gate Leakage Current VGS=±20V, V DS=0V - - ±10 mA
VGS=10V, I DS=30A - 5.9 7.1
c
RDS(ON) Drain-Source On-state Resistance TJ=125°C - 9.4 - mW
VGS=4.5V, IDS=15A - 7.7 10
Gfs Forward Transconductance VDS =5V, ID S=30A - 70 - S
Diode Characteristics
VSD c Diode Forward Voltage ISD=15A, VGS=0V - 0.82 1.1 V
trr Reverse Recovery Time - 13 -
ta Charge Time - 6.6 - ns
ISD=5A, dlSD/dt=100A/ms
tb Discharge Time - 6.4 -
Qrr Reverse Recovery Charge - 5.8 - nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,V DS=0V,F=1MHz 1 1.3 2.3 W
C iss Input Capacitance 950 1186 1400
VGS=0V,
Coss Output Capacitance VDS =15V, 142 178 213 pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance 86 108 129
td(ON) Turn-on Delay Time - 13.4 16
tr Turn-on Rise Time VDD =15V, R L =15W, - 7.6 9
IDS=1A, VGEN =10V, ns
t d(OFF) Turn-off Delay Time RG=6W - 31.6 37
tf Turn-off Fall Time - 11.6 14
Gate Charge Characteristics
VDS =15V, VGS=10V,
Qg Total Gate Charge - 21 26
IDS=30A
Qg Total Gate Charge - 9.4 -
Qgth Threshold Gate Charge - 1.2 - nC
VDS =15V, VGS=4.5V,
Qgs Gate-Source Charge IDS=30A - 4 -
Q gd Gate-Drain Charge - 3.8 -
Note c: Pulse test; pulse width£300ms, duty cycle£2%.

Copyright ã Sinopower Semiconductor, Inc. 3 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Typical Operating Characteristics

Power Dissipation Drain Current

35 60

30
50

25
Ptot - Power (W)

ID - Drain Current (A)

40

20
30
15

20
10

10
5
o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

300 4
Normalized Transient Thermal Resistance

100 1 Duty = 0.5

0.2
it
ID - Drain Current (A)

100ms
L im

0.1
n)

0.1
s( o

0.05
Rd

10
0.02
1ms
0.01
0.01
10ms

1 DC

1E-3

Single Pulse
o
o
TC=25 C RqJC :3.9 C/W
0.1 1E-4
0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright ã Sinopower Semiconductor, Inc. 4 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

90 14

VGS= 4,4.5,5,6,7,8,9,10V
75 12

RDS(ON) - On - Resistance (mW)

ID - Drain Current (A)

60 10
3.5V
VGS=4.5V
45 8

VGS=10V
30 6
3V

15 4

2.5V
0 2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 15 30 45 60 75 90

VDS - Drain - Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

30 1.6
IDS=30A IDS =250mA
1.4
RDS(ON) - On - Resistance (mW)

25
Normalized Threshold Vlotage

1.2
20

1.0
15
0.8

10
0.6

5
0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

Copyright ã Sinopower Semiconductor, Inc. 5 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 100
VGS = 10V
1.8 IDS = 30A

1.6
Normalized On Resistance

o
Tj=150 C
1.4 10

IS - Source Current (A)

1.2
o
Tj=25 C
1.0

0.8 1

0.6

0.4
o
RON@Tj=25 C: 5.9mW
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

1600 10
Frequency=1MHz VDS= 15V
1400 9
IDS= 30A
8
VGS - Gate-source Voltage (V)

1200 Ciss
7
C - Capacitance (pF)

1000
6

800 5

600 4

3
400
2
Coss
200
1
Crss
0 0
0 5 10 15 20 25 30 0 3 6 9 12 15 18 21
VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright ã Sinopower Semiconductor, Inc. 6 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Avalanche Test Circuit and Waveforms

VDS VDSX(SUS)
L tp

VDS
DUT
IAS

RG
VDD
VDD
EAS
tp IL
0.01W
tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

Copyright ã Sinopower Semiconductor, Inc. 7 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Package Information
DFN5x6-8

F F1
D1

E1
E
K

G1
G
D
A
C

e B

S DFN5x6-8 RECOMMENDED LAND PATTERN

Y
M MILLIMETERS INCHES
B
O 4.6
L MIN. MAX. MIN. MAX.
A 0.90 1.20 0.035 0.047
0.77
B 0.3 0.51 0.012 0.020
C 0.19 0.25 0.007 0.010
D 4.80 5.30 0.189 0.209
0.61

D1 4.00 4.40 0.157 0.173

E 5.90 6.20 0.232 0.244 3.6
E1 5.50 5.80 0.217 0.228 6.1
1.18 1.16

e 1.27 BSC 0.050 BSC

F 0.05 0.30 0.002 0.012
F1 0.35 0.75 0.014 0.030
G 0.05 0.30 0.002 0.012
0.5 1.27
0.71

G1 0.35 0.75 0.014 0.030

H 3.34 3.9 0.131 0.154
K 0.762 - 0.03 -
UNIT: mm
Note : [Link] D, D1,D2 and E1 do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 10 mil.

Copyright ã Sinopower Semiconductor, Inc. 8 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 A
OD1 B
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F

330.0±2.00 50 MIN. 12.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05
-0.00 -0.20
DFN5x6-8 P0 P1 P2 D0 D1 T A0 B0 K0

4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.5±0.20 5.3±0.20 1.4±0.20
-0.00 -0.4
(mm)

Copyright ã Sinopower Semiconductor, Inc. 9 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Taping Direction Information

DFN5x6-8

USER DIRECTION OF FEED

Classification Profile

Copyright ã Sinopower Semiconductor, Inc. 10 [Link]

Rev. A.3 - February, 2014
SM4337NSKP ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3
Thickness <350 ³350
<2.5 mm 235 °C 220 °C
³2.5 mm 220 °C 220 °C

Table 2. Pb-free Process – Classification Temperatures (Tc)

3 3 3
Package Volume mm Volume mm Volume mm
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
³2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050

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Rev. A.3 - February, 2014