UNISONIC TECHNOLOGIES CO.
, LTD
2SD468 NPN SILICON TRANSISTOR
LOW FREQUENCY POWER
AMPLIFIER
FEATURES 1
TO-92
* Low frequency power amplifier
* Complement to 2SB562
1
TO-92NL
*Pb-free plating product number: 2SD468L
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
2SD468-x-T92-B 2SD468L-x-T92-B TO-92 E C B Tape Box
2SD468-x-T92-K 2SD468L-x-T92-K TO-92 E C B Bulk
2SD468-x-T9N-B 2SD468L-x-T9N-B TO-92NL E C B Tape Box
2SD468-x-T9N-K 2SD468L-x-T9N-K TO-92NL E C B Bulk
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Copyright © 2008 Unisonic Technologies Co., Ltd QW-R211-003.B
2SD468 NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 , unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1 A
Collector Peak Current ICP 1.5 A
Collector Power Dissipation PC 0.9 W
Junction Temperature TJ +150
Storage Temperature TSTG -55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Base Breakdown Voltage BVCBO Ic=10µA, IE=0 25 V
Collector Emitter Breakdown Voltage BVCEO Ic=1mA, RBE=∞ 20 V
Emitter Base Breakdown Voltage BVEBO IE=10µA, IC=0 5 V
Collector Cut-Off Current ICBO VCB=20V, IE=0 1 µA
DC Current Transfer Ratio hFE VCE=2V, Ic=0.5A (Note) 85 240
Collector Emitter Saturation Voltage VCE(SAT) Ic=0.8A, IB=0.08A (Note) 0.2 0.5 V
Base Emitter Voltage VBE VCE=2V, Ic=0.5A (Note) 0.79 1 V
Gain Bandwidth Product fT VCE=2V, Ic=0.5A (Note) 190 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz 22 pF
Note: Pulse test
CLASSIFICATION OF hFE
RANK B C
RANGE 85 - 170 120 - 240
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2SD468 NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Power Dissipation, PC (W)
PC
Collector Current, IC (A)
=0
.
9W
DC Current Transfer Ratio
Typical Transfer Characteristics vs. Collector Current
1,000 5,000
VCE=2V
DC Current Transfer Ratio, hFE
2,000 VCE=2V
300
1,000
Collector current, IC (mA)
Ta=75 25
100 500
Ta=75
200
30
100
25
10 50
20
3
10
1 5
0 0.2 0.4 0.6 0.8 1.0 1 3 10 30 100 300 1,000
Base to Emitter Voltage, VBE (V) Collector Current, IC (mA)
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2SD468 NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
vs. Collector to Base Voltage
200
f=1MHz
IE=0
100
50
20
10
5
2 5 10 20 50
Collector to Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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