Ordering number : ENN7767A 2SK3747

N-Channel Silicon MOSFET

2SK3747 High-Voltage, High-Speed Switching

Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 1500 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 2 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 4 A
3.0 W
Allowable Power Dissipation PD
Tc=25°C 50 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 42 mJ
Avalanche Current *2 IAV 2 A
*1 VDD=99V, L=20mH, IAV=2A
*2 L≤20mH, single pulse

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 1500 V
Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V 100 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V
Forward Transfer Admittance yfs VDS=20V, ID=1A 0.7 1.4 S
Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V 10 13 Ω
Marking : K3747 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62005QB MS IM TB-00001301 / 81004QB TS IM TB-00000018 No.7767-1/4

 2SK3747
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Input Capacitance Ciss VDS=30V, f=1MHz 380 pF
Output Capacitance Coss VDS=30V, f=1MHz 70 pF
Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 40 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time tr See specified Test Circuit. 37 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 152 ns
Fall Time tf See specified Test Circuit. 59 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=2A 37.5 nC
Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=2A 2.7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=2A 20 nC
Diode Forward Voltage VSD IS=2A, VGS=0V 0.88 1.2 V
Note) Although the protection diode is contained between gate and source, be careful of handling enough.

Package Dimensions
unit : mm
7505-003

16.0 3.4 5.6

3.1
5.0
8.0
22.0
21.0

2.0
4.0

2.8
2.0 2.0
20.4

1.0 0.6

1 2 3
1 : Gate
2 : Drain
3.5

3 : Source

5.45 5.45 SANYO : TO-3PML

Switching Time Test Circuit Avalanche Resistance Test Circuit

VIN VDD=200V
10V L
0V ≥50Ω
ID=1A
VIN RL=200Ω

D VOUT 2SK3747
PW=10µs 10V
D.C.≤0.5% 50Ω VDD
0V
G

2SK3747
P.G RGS=50Ω S

No.7767-2/4
 2SK3747
ID -- VDS ID -- VGS
4.0 3.0
Tc=25°C VDS=20V
pulse pulse
3.5
8V 2.5 Tc= --25°C
3.0
10V
Drain Current, ID -- A

Drain Current, ID -- A
2.0
2.5 25°C
6V
2.0 1.5
75°C
1.5
1.0

1.0 5V
0.5
0.5
VGS=4V
0 0
0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT07130 Gate-to-Source Voltage, VGS -- V IT07131
RDS(on) -- VGS RDS(on) -- Tc
30 30
ID=1A ID=1A
VGS=10V
On-State Resistance, RDS(on) -- Ω

On-State Resistance, RDS(on) -- Ω

25 25

20 20
Static Drain-to-Source

Tc=75°C Static Drain-to-Source

15 15

25°C
10 10
--25°C
5 5

0 0
0 2 4 6 8 10 12 14 16 18 20 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT07132 Case Temperature, Tc -- °C IT07133
yfs -- ID IS -- VSD
5 10
VDS=20V 7 VGS=0V
Forward Transfer Admittance, yfs -- S

5
3
3
2 2
Source Current, IS -- A

°C 1.0
25 7
1.0
5
5°C
7
= --2 3
Tc °C 2
5 75
0.1
5°C

3 7
--25°C

5
25°C
7
Tc=

2 3
2

0.1 0.01
3 5 7 0.1 2 3 5 7 1.0 2 3 0.2 0.4 0.6 0.8 1.0 1.2
Drain Current, ID -- A IT07134 Diode Forward Voltage, VSD -- V IT07135
SW Time -- ID Ciss, Coss, Crss -- VDS
5 5
VDD=200V f=1MHz
3
3
VGS=10V
2
Switching Time, SW Time -- ns

td(off)
2
1000
Ciss, Coss, Crss -- pF

7
5 Ciss
100
tf 3
7 2
Co
5 ss
100
7
3 Crss
tr 5

2 3

td(on) 2

10 10
0.1 2 3 5 7 1.0 2 3 0 5 10 15 20 25 30 35 40 45 50
Drain Current, ID -- A IT09037 Drain-to-Source Voltage, VDS -- V IT09038

No.7767-3/4
 2SK3747
VGS -- Qg ASO
10 7
VDS=200V 5 IDP=4A <10µs
9 ID=2A 10
3 µs
Gate-to-Source Voltage, VGS -- V

ID=2A
8 2 10
0µ
s

Drain Current, ID -- A
7 1.0

1m
7 10

s
m
6 5 D 10 s
C 0m
3
op s
5 er
2 at
io
4 n
0.1 Operation in this area
3 7 is limited by RDS(on).
5
2
3
1 2 Tc=25°C
0 0.01 Single pulse
0 10 20 30 40 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000 2 3
Total Gate Charge, Qg -- nC IT07138 Drain-to-Source Voltage, VDS -- V IT07139
PD -- Ta PD -- Tc
3.5 60
Allowable Power Dissipation, PD -- W

Allowable Power Dissipation, PD -- W

3.0
50

2.5
40

2.0
30
1.5

20
1.0

10
0.5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT07140 Case Temperature, Tc -- °C IT07141

Note on usage : Since the 2SK3747 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.

PS No.7767-4/4