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LM2776
SNVSA56B – MAY 2015 – REVISED FEBRUARY 2017

LM2776 Switched Capacitor Inverter

1 Features 3 Description
•
1 Input Voltage: 2.7 V to 5.5 V The LM2776 CMOS charge-pump voltage converter
inverts a positive voltage in the range from 2.7 V to
• 200-mA Output Current 5.5 V to the corresponding negative voltage. The
• Inverts Input Supply Voltage LM2776 uses three low-cost capacitors to provide
• Low-Current PFM Mode Operation 200 mA of output current without the cost, size, and
• 2-MHz Switching Frequency electromagnetic interference (EMI) related to
inductor-based converters.
• Greater than 90% Efficiency
With an operating current of only 100 μA and
• Current Limit and Thermal Protection
operating efficiency greater than 90% at most loads,
• No Inductors the LM2776 provides ideal performance for battery-
powered systems requiring a high power negative
2 Applications power supply.
• Operational Amplifier Power Supplies The LM2776 has been placed in TI's 6-pin SOT-23 to
• Interface Power Supplies maintain a small form factor.
• Data Converter Supplies
Device Information(1)
• Audio Amplifier Power Supplies PART NUMBER PACKAGE BODY SIZE (NOM)
• Portable Electronic Devices LM2776 SOT-23 (6) 2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.

space
space
space
Typical Application
Output Impedance vs Input Voltage
LM2776 IOUT = 100 mA
2.7 V to 5.5 V -VIN @ up to 200mA
VIN VOUT 5.0
TA = -40°C
4.5 TA = 25°C
2.2 PF EN C1+ 2.2 PF TA = 85°C
4.0
Output Impedance (:)

GND 1 PF 3.5
C1-
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Input Voltage (V) D005

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM2776
SNVSA56B – MAY 2015 – REVISED FEBRUARY 2017 [Link]

Table of Contents
1 Features .................................................................. 1 7.4 Device Functional Modes........................................ 10
2 Applications ........................................................... 1 8 Application and Implementation ........................ 11
3 Description ............................................................. 1 8.1 Application Information............................................ 11
4 Revision History..................................................... 2 8.2 Typical Application - Voltage Inverter ..................... 11
5 Pin Configuration and Functions ......................... 3 9 Power Supply Recommendations...................... 15
6 Specifications......................................................... 4 10 Layout................................................................... 15
6.1 Absolute Maximum Ratings ...................................... 4 10.1 Layout Guidelines ................................................. 15
6.2 ESD Ratings.............................................................. 4 10.2 Layout Example .................................................... 15
6.3 Recommended Operating Conditions....................... 4 11 Device and Documentation Support ................. 16
6.4 Thermal Information .................................................. 4 11.1 Device Support...................................................... 16
6.5 Electrical Characteristics........................................... 5 11.2 Receiving Notification of Documentation Updates 16
6.6 Switching Characteristics .......................................... 5 11.3 Community Resources.......................................... 16
6.7 Typical Characteristics ............................................. 5 11.4 Trademarks ........................................................... 16
7 Detailed Description .............................................. 9 11.5 Electrostatic Discharge Caution ............................ 16
7.1 Overview ................................................................... 9 11.6 Glossary ................................................................ 16
7.2 Functional Block Diagram ......................................... 9 12 Mechanical, Packaging, and Orderable
7.3 Feature Description................................................... 9 Information ........................................................... 16

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (February 2016) to Revision B Page

• Added link for TIDA-01063 reference design ......................................................................................................................... 1

Changes from Original (May 2015) to Revision A Page

• Changed Equation 1 from "ROUT = RSW..." to "ROUT = (2 × RSW)..."....................................................................................... 12

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5 Pin Configuration and Functions

DBV Package
6-Pin SOT
Top View

1 6

2 LM2776 5

3 4

Pin Functions
PIN
TYPE DESCRIPTION
NUMBER NAME
1 VOUT Output/Power Negative voltage output.
2 GND Ground Power supply ground input.
3 VIN Input/Power Power supply positive voltage input.
Enable control pin, tie this pin high (EN = 1) for normal operation, and to GND (EN
4 EN Input
= 0) for shutdown.
5 C1+ Power Connect this pin to the positive terminal of the charge-pump capacitor.
6 C1- Power Connect this pin to the negative terminal of the charge-pump capacitor.

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
Supply voltage (VIN to GND, or GND to VOUT) 6 V
EN (GND − 0.3) (VIN + 0.3) V
VOUT continuous output current 250 mA
Operating junction temperature, TJMax (3) 125 °C
Storage temperature, Tstg –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) The maximum allowable power dissipation is calculated by using PDMax = (TJMax − TA) / RθJA, where TJMax is the maximum junction
temperature, TA is the ambient temperature, and RθJA is the junction-to-ambient thermal resistance of the specified package.

6.2 ESD Ratings

VALUE UNIT
(1)
Electrostatic Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 ±1000 V
V(ESD)
discharge Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±250 V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Junction temperature –40 125 °C
Ambient temperature –40 85 °C
Input voltage 2.7 5.5 V
Output current 0 200 mA

6.4 Thermal Information

LM2776
THERMAL METRIC (1) DBV (SOT) UNIT
6 PINS
RθJA Junction-to-ambient thermal resistance 187 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 158.2 °C/W
RθJB Junction-to-board thermal resistance 33.3 °C/W
ψJT Junction-to-top characterization parameter 37.8 °C/W
ψJB Junction-to-board characterization parameter 32.8 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.

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6.5 Electrical Characteristics

Typical limits tested at TA = 25°C. Minimum and maximum limits apply over the full operating ambient temperature range
(−40°C ≤ TA ≤ +85°C). VIN = 3.6 V, CIN = COUT = 2.2 µF, C1 = 1 µF
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IQ Supply current EN = 1. No load 100 200 µA
ISD Shutdown supply current EN = 0 0.1 1 µA
Normal operation 1.2
VEN Enable pin input threshold voltage V
Shutdown mode 0.4
ROUT Output resistance 2.5 Ω
ICL Output current limit 400 mA
VIN Falling 2.4
UVLO Undervoltage lockout V
VIN Rising 2.6

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ƒSW Switching frequency 1.7 2 2.3 MHz

6.7 Typical Characteristics

(Typical Application circuit, VIN = 3.6 V unless otherwise specified.)

0.14 0.035
TA = -40°C
0.12 TA = 25°C 0.030
TA = 85°C

0.10 0.025
Ripple (V)

Ripple (V)

0.08 0.020

0.06 0.015

0.04 0.010

TA = -40°C
0.02 0.005 TA = 25°C
TA = 85°C
0.00 0.000
0.0001 0.001 0.01 0.1 1 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Output Current (A) D001
Input Voltage (V) D002
VIN = 5.5 V IOUT = 100 mA

Figure 1. Output Ripple vs Output Current Figure 2. Output Ripple vs Input Voltage

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Typical Characteristics (continued)

(Typical Application circuit, VIN = 3.6 V unless otherwise specified.)
0.000002 0.00012
TA = -40°C
TA = 25°C
TA = 85°C 0.0001
0.0000015

0.00008
Current (A)

Current (A)
0.000001
0.00006
0.0000005
0.00004

0 TA = -40°C
0.00002
TA = 25°C
TA = 85°C
-0.0000005 0
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
VIN (V) D003
VIN (V) D004
No load

Figure 3. Shutdown Current vs Input Voltage Figure 4. Quiescent Current vs Input Voltage
1000 100
TA = -40°C
500 TA = 25°C 90
300 TA = 85°C 80
200
Output Impedance (:)

70
100
Efficiency (%)

60
50
30 50
20
40
10
30
5
20 TA = -40°C
3
2 10 TA = 25°C
TA = 85°C
1 0
0.0001 0.001 0.010.02 0.05 0.1 0.2 0.5 1 10P 100P 1m 10m 100m
Output Current (A) D006
D005
IOUT (A) D005
D006
D007
VIN = 5.5 V VIN = 5.5 V

Figure 5. Output Impedance vs Output Current Figure 6. Efficiency vs Output Current

100 -4.7
TA = -40°C
90 TA = 25°C
-4.8
80 TA = 85°C

70 -4.9
Efficiency (%)

60
VOUT (V)

-5.0
50
-5.1
40
30 -5.2
20 TA = -40°C
TA = 25°C -5.3
10
TA = 85°C
0 -5.4
10P 100P 1m 10m 100m 10P 100P 1m 10m 100m
IOUT (A) D005
D006
D007
IOUT (A) D009
VIN = 3.6 V VIN = 5.5 V

Figure 7. Efficiency vs Output Current Figure 8. Output Voltage vs Output Current

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Typical Characteristics (continued)

(Typical Application circuit, VIN = 3.6 V unless otherwise specified.)
-2.5 2.06
TA = -40°C TA = -40°C
-2.6 TA = 25°C
TA = 25°C 2.04
-2.7 TA = 85°C TA = 85°C
2.02
-2.8

Frequency (MHz)
-2.9 2.00
VOUT (V)

-3.0
1.98
-3.1
-3.2 1.96

-3.3 1.94
-3.4
1.92
-3.5
-3.6 1.90
10P 100P 1m 10m 100m 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
IOUT (A) VIN (V) D011
D010
VIN = 3.6 V IOUT = 150 mA

Figure 9. Output Voltage vs Output Current Figure 10. Frequency vs Input Voltage

IOUT = 0 mA VIN = 5.5 V IOUT = 200 mA VIN = 5.5 V

Figure 11. Unloaded Output Voltage Ripple Figure 12. Loaded Output Voltage Ripple

EN = 1 VIN = 5.5 V IOUT = 100 mA EN = 0 VIN = 5.5 V IOUT = 100 mA

Figure 13. EN High Figure 14. EN Low

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Typical Characteristics (continued)

(Typical Application circuit, VIN = 3.6 V unless otherwise specified.)

IOUT = 75 mA VIN = 5.5 V

Figure 15. Line Step 5.5 V to 5 V Figure 16. Load Step 10 mA to 100 mA

VIN = 5.5 V

Figure 17. Output Short

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7 Detailed Description

7.1 Overview
The LM2776 CMOS charge-pump voltage converter inverts a positive voltage in the range of 2.7 V to 5.5 V to
the corresponding negative voltage of −2.7 V to −5.5 V. The LM2776 uses three low-cost capacitors to provide
up to 200 mA of output current.

7.2 Functional Block Diagram

LM2776
Current
VIN
Limit

Switch Array C1+

Switch
2 MHz
Drivers C1-
Osc.

VOUT

EN
GND

Reference

7.3 Feature Description

7.3.1 Input Current Limit
The LM2776 contains current limit circuitry that protects the device in the event of excessive input current and/or
output shorts to ground. The input current is limited to 400 mA (typical at VIN = 5.5 V) when the output is shorted
directly to ground. When the LM2776 is current limiting, power dissipation in the device is likely to be quite high.
In this event, thermal cycling is expected.

7.3.2 PFM Operation

To minimize quiescent current during light load operation, the LM2776 allows PFM or pulse-skipping operation.
By allowing the charge pump to switch less when the output current is less than 40 mA, the quiescent current
drawn from the power source is minimized. The frequency of pulsed operation is not limited and can drop into the
sub-1-kHz range when unloaded. As the load increases, the frequency of pulsing increases until it transitions to
constant frequency. The fundamental switching frequency of the LM2776 is 2 MHz.

7.3.3 Output Discharge

In shutdown, the LM2776 actively pulls down on the output of the device until the output voltage reaches GND. In
this mode, the current drawn from the output is approximately 1.85 mA.

7.3.4 Thermal Shutdown

The LM2776 implements a thermal shutdown mechanism to protect the device from damage due to overheating.
When the junction temperature rises to 150°C (typical), the part switches into shutdown mode. The LM2776
releases thermal shutdown when the junction temperature of the part is reduced to 130°C (typical).

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Feature Description (continued)

Thermal shutdown is most often triggered by self-heating, which occurs when there is excessive power
dissipation in the device and/or insufficient thermal dissipation. LM2776 power dissipation increases with
increased output current and input voltage. When self-heating brings on thermal shutdown, thermal cycling is the
typical result. Thermal cycling is the repeating process where the part self-heats, enters thermal shutdown
(where internal power dissipation is practically zero), cools, turns on, and then heats up again to the thermal
shutdown threshold. Thermal cycling is recognized by a pulsing output voltage and can be stopped be reducing
the internal power dissipation (reduce input voltage and/or output current) or the ambient temperature. If thermal
cycling occurs under desired operating conditions, thermal dissipation performance must be improved to
accommodate the power dissipation of the LM2776.

7.3.5 Undervoltage Lockout

The LM2776 has an internal comparator that monitors the voltage at VIN and forces the device into shutdown if
the input voltage drops to 2.4 V. If the input voltage rises above 2.6 V, the LM2776 resumes normal operation.

7.4 Device Functional Modes

7.4.1 Shutdown Mode
An enable pin (EN) pin is available to disable the device and place the LM2776 into shutdown mode reducing the
quiescent current to 1 µA. In shutdown, the output of the LM2776 is pulled to ground by an internal pullup current
source (approx 1.85 mA).

7.4.2 Enable Mode

Applying a voltage greater than 1.2 V to the EN pin places the device into enable mode. When unloaded, the
input current during operation is 120 µA. As the load current increases, so does the quiescent current. When
enabled, the output voltage is equal to the inverse of the input voltage minus the voltage drop across the charge
pump.

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8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LM2776 CMOS charge-pump voltage converter inverts a positive voltage in the range of 2.7 V to 5.5 V to
the corresponding negative voltage of −2.7 V to −5.5 V. The device uses three low-cost capacitors to provide up
to 200 mA of output current. The LM2776 operates at 2-MHz oscillator frequency to reduce output resistance and
voltage ripple under heavy loads. With an operating current of only 100 µA (operating efficiency greater than
91% with most loads) and 1-µA typical shutdown current, the LM2776 provides ideal performance for battery-
powered systems.

8.2 Typical Application - Voltage Inverter

VS+
Boost or Battery +

VS-
2.2 PF
LM2776

VIN VOUT

1 PF 2.2 PF
PP / PC EN C1+

GND C1-

Figure 18. Voltage Inverter

8.2.1 Design Requirements

Example requirements for typical voltage inverter applications:

DESIGN PARAMETER EXAMPLE VALUE

Input voltage range 2.7 V to 5.5 V
Output current 0 mA to 200 mA
Boost switching frequency 2 MHz

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8.2.2 Detailed Design Requirements

The main application of LM2776 is to generate a negative supply voltage. The voltage inverter circuit uses only
three external capacitors with an range of the input supply voltage from 2.7 V to 5.5 V.
The LM2776 contains four large CMOS switches which are switched in a sequence to invert the input supply
voltage. Energy transfer and storage are provided by external capacitors. Figure 19 shows the voltage
conversion scheme. When S1 and S3 are closed, C1 charges to the supply voltage VIN. During this time interval,
switches S2 and S4 are open. In the second time interval, S1 and S3 are open; at the same time, S2 and S4 are
closed, C1 is charging C2. After a number of cycles, the voltage across C2 is pumped to VIN. Because the anode
of C2 is connected to ground, the output at the cathode of C2 equals −(VIN) when there is no load current. The
output voltage drop when a load is added is determined by the parasitic resistance (Rds(on) of the MOSFET
switches and the equivalent series resistance (ESR) of the capacitors) and the charge transfer loss between
capacitors.
S1 C1+ S2
VIN
GND
CIN
C1

COUT
GND
S3 S4
C1- VOUT

OSC.
2 MHz

PFM COMP

VIN
Figure 19. Voltage Inverting Principle

The output characteristics of this circuit can be approximated by an ideal voltage source in series with a
resistance. The voltage source equals − (VIN). The output resistance ROUT is a function of the ON resistance of
the internal MOSFET switches, the oscillator frequency, the capacitance and ESR of C1 and C2. Because the
switching current charging and discharging C1 is approximately twice as the output current, the effect of the ESR
of the pumping capacitor C1 is multiplied by four in the output resistance. The output capacitor C2 is charging and
discharging at a current approximately equal to the output current, therefore, its ESR only counts once in the
output resistance. A good approximation of ROUT is:
ROUT = (2 × RSW) + [1 / (ƒSW × C)] + (4 × ESRC1) + ESRCOUT
where
• RSW is the sum of the ON resistance of the internal MOSFET switches shown in Figure 19. (1)
High-capacitance, low-ESR ceramic capacitors reduce the output resistance.

[Link] Efficiency
Charge-pump efficiency is defined as
Efficiency = [(VOUT × IOUT) / {VIN × (IIN + IQ)}]
where
• IQ (VIN) is the quiescent power loss of the device. (2)

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[Link] Power Dissipation

LM2776 power dissipation (PD) is calculated simply by subtracting output power from input power:
PD = PIN – POUT = [VIN × (–IOUT + IQ)] – [VOUT × IOUT] (3)
Power dissipation increases with increased input voltage and output current. Internal power dissipation self-heats
the device. Dissipating this amount power/heat so the LM2776 does not overheat is a demanding thermal
requirement for a small surface-mount package. When soldered to a PCB with layout conducive to power
dissipation, the thermal properties of the SOT package enable this power to be dissipated from the LM2776 with
little or no derating, even when the circuit is placed in elevated ambient temperatures when the output current is
200 mA or less.

[Link] Capacitor Selection

The LM2776 requires 3 external capacitors for proper operation. TI recommends surface-mount multi-layer
ceramic capacitors. These capacitors are small, inexpensive, and have very low ESR (≤ 15 mΩ typical).
Tantalum capacitors, OS-CON capacitors, and aluminum electrolytic capacitors generally are not recommended
for use with the LM2776 due to their high ESR, as compared to ceramic capacitors.
For most applications, ceramic capacitors with an X7R or X5R temperature characteristic are preferred for use
with the LM2776. These capacitors have tight capacitance tolerance (as good as ±10%) and hold their value over
temperature (X7R: ±15% over –55ºC to 125°C; X5R: ±15% over –55°C to 85°C).
Capacitors with a Y5V or Z5U temperature characteristic are generally not recommended for use with the
LM2776. These types of capacitors typically have wide capacitance tolerance (80%, …20%) and vary
significantly over temperature (Y5V: 22%, –82% over –30°C to 85°C range; Z5U: 22%, –56% over 10°C to 85°C
range). Under some conditions, a 1-µF-rated Y5V or Z5U capacitor could have a capacitance as low as 0.1 µF.
Such detrimental deviation is likely to cause Y5V and Z5U capacitors to fail to meet the minimum capacitance
requirements of the LM2776.
Net capacitance of a ceramic capacitor decreases with increased DC bias. This degradation can result in lower
capacitance than expected on the input and/or output, resulting in higher ripple voltages and currents. Using
capacitors at DC bias voltages significantly below the capacitor voltage rating usually minimizes DC bias effects.
Consult capacitor manufacturers for information on capacitor DC bias characteristics.
Capacitance characteristics can vary quite dramatically with different application conditions, capacitor types, and
capacitor manufacturers. It is strongly recommended that the LM2776 circuit be thoroughly evaluated early in the
design-in process with the mass-production capacitors of choice. This helps ensure that any such variability in
capacitance does not negatively impact circuit performance.
The voltage rating of the output capacitor must be 10 V or more. For example, a 10-V 0603 1-µF is acceptable
for use with the LM2776, as long as the capacitance does not fall below a minimum of 0.5 µF in the intended
application. All other capacitors must have a voltage rating at or above the maximum input voltage of the
application. Select the capacitors such that the capacitance on the input does not fall below 0.7 µF, and the
capacitance of the flying capacitor does not fall below 0.2 µF.

[Link] Output Capacitor and Output Voltage Ripple

The peak-to-peak output voltage ripple is determined by the oscillator frequency, the capacitance and ESR of the
output capacitor COUT:
VRIPPLE = [(2 × ILOAD) / (ƒSW × COUT)] + (2 × ILOAD × ESRCOUT) (4)
In typical applications, a 1-µF low-ESR ceramic output capacitor is recommended. Different output capacitance
values can be used to reduce ripple shrink the solution size, and/or cut the cost of the solution. But changing the
output capacitor may also require changing the flying capacitor and/or input capacitor to maintain good overall
circuit performance.

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NOTE
In high-current applications, TI recommends a 10-µF, 10-V low-ESR ceramic output
capacitor. If a small output capacitor is used, the output ripple can become large during
the transition between PFM mode and constant switching. To prevent toggling, a 2-µF
capacitance is recommended. For example, a 10- µF, 10-V output capacitor in a 0402
case size typically only has 2-µF capacitance when biased to 5 V.

High ESR in the output capacitor increases output voltage ripple. If a ceramic capacitor is used at the output, this
is usually not a concern because the ESR of a ceramic capacitor is typically very low and has only a minimal
impact on ripple magnitudes. If a different capacitor type with higher ESR is used (tantalum, for example), the
ESR could result in high ripple. To eliminate this effect, the net output ESR can be significantly reduced by
placing a low-ESR ceramic capacitor in parallel with the primary output capacitor. The low ESR of the ceramic
capacitor is in parallel with the higher ESR, resulting in a low net ESR based on the principles of parallel
resistance reduction.

[Link] Input Capacitor

The input capacitor (CIN) is a reservoir of charge that aids a quick transfer of charge from the supply to the flying
capacitors during the charge phase of operation. The input capacitor helps to keep the input voltage from
drooping at the start of the charge phase when the flying capacitors are connected to the input. It also filters
noise on the input pin, keeping this noise out of sensitive internal analog circuitry that is biased off the input line.
Much like the relationship between the output capacitance and output voltage ripple, input capacitance has a
dominant and first-order effect on input ripple magnitude. Increasing (decreasing) the input capacitance results in
a proportional decrease (increase) in input voltage ripple. Input voltage, output current, and flying capacitance
also affects input ripple levels to some degree.
In typical applications, a 1-µF low-ESR ceramic capacitor is recommended on the input. When operating near the
maximum load of 200 mA, a minimum recommended input capacitance after taking into the DC-bias derating is 2
µF or larger. Different input capacitance values can be used to reduce ripple, shrink the solution size, and/or cut
the cost of the solution.

[Link] Flying Capacitor

The flying capacitor (C1) transfers charge from the input to the output. Flying capacitance can impact both output
current capability and ripple magnitudes. If flying capacitance is too small, the LM2776 may not be able to
regulate the output voltage when load currents are high. On the other hand, if the flying capacitance is too large,
the flying capacitor might overwhelm the input and output capacitors, resulting in increased input and output
ripple.
In typical high-current applications, TI recommends 0.47-µF or 1-µF 10 V low-ESR ceramic capacitors for the
flying capacitors. Polarized capacitors (tantalum, aluminum electrolytic, etc.) must not be used for the flying
capacitor, as they could become reverse-biased during LM2776 operation.

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8.2.3 Application Curve

5.0
TA = -40°C
4.5 TA = 25°C
4.0 TA = 85°C

3.5

Output Load (:)

3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.4
Input Voltage (V) D005
Figure 20. Output Impedance vs Input Voltage

9 Power Supply Recommendations

The LM2776 is designed to operate from an input voltage supply range from 2.7 V to 5.5 V. This input supply
must be well regulated and capable to supply the required input current. If the input supply is located far from the
LM2776 additional bulk capacitance may be required in addition to the ceramic bypass capacitors.

10 Layout

10.1 Layout Guidelines

The high switching frequency and large switching currents of the LM2776 make the choice of layout important.
Use the following steps as a reference to ensure the device is stable and maintains proper LED current
regulation across its intended operating voltage and current range:
• Place CIN on the top layer (same layer as the LM2776) and as close to the device as possible. Connecting
the input capacitor through short, wide traces to both the VIN and GND pins reduces the inductive voltage
spikes that occur during switching which can corrupt the VIN line.
• Place COUT on the top layer (same layer as the LM2776) and as close to the VOUT and GND pins as
possible. The returns for both CIN and COUT must come together at one point, as close to the GND pin as
possible. Connecting COUT through short, wide traces reduce the series inductance on the VOUT and GND
pins that can corrupt the VOUT and GND lines and cause excessive noise in the device and surrounding
circuitry.
• Place C1 on the top layer (same layer as the LM2776) and as close to the device as possible. Connect the
flying capacitor through short, wide traces to both the C1+ and C1– pins.

10.2 Layout Example

LM2776
To Load
VOUT C1-
COUT C1
To GND Plane GND C1+

CIN
VIN EN
To Supply

Figure 21. LM2776 Layout Example

Copyright © 2015–2017, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: LM2776
LM2776
SNVSA56B – MAY 2015 – REVISED FEBRUARY 2017 [Link]

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on [Link]. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At [Link], you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

16 Submit Documentation Feedback Copyright © 2015–2017, Texas Instruments Incorporated

Product Folder Links: LM2776

 PACKAGE OPTION ADDENDUM

[Link] 31-Oct-2025

PACKAGING INFORMATION

Orderable part number Status Material type Package | Pins Package qty | Carrier RoHS Lead finish/ MSL rating/ Op temp (°C) Part marking
(1) (2) (3) Ball material Peak reflow (6)
(4) (5)

LM2776DBVR Active Production SOT-23 (DBV) | 6 3000 | LARGE T&R Yes SN Level-1-260C-UNLIM -40 to 85 2776
LM2776DBVR.A Active Production SOT-23 (DBV) | 6 3000 | LARGE T&R Yes SN Level-1-260C-UNLIM -40 to 125 2776
LM2776DBVT Active Production SOT-23 (DBV) | 6 250 | SMALL T&R Yes NIPDAU | SN Level-1-260C-UNLIM -40 to 85 2776
LM2776DBVT.A Active Production SOT-23 (DBV) | 6 250 | SMALL T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 2776

(1)
Status: For more details on status, see our product life cycle.

(2)
Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance,
reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional
waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind.

(3)
RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition.

(4)
Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum
column width.

(5)
MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown.
Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board.

(6)
Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part.

Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two
combined represent the entire part marking for that device.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and
makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative
and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers
and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1
 PACKAGE MATERIALS INFORMATION

[Link] 13-Aug-2025

TAPE AND REEL INFORMATION

REEL DIMENSIONS TAPE DIMENSIONS

K0 P1

B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2 Q1 Q2

Q3 Q4 Q3 Q4 User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM2776DBVR SOT-23 DBV 6 3000 180.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM2776DBVT SOT-23 DBV 6 250 180.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM2776DBVT SOT-23 DBV 6 250 180.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

[Link] 13-Aug-2025

TAPE AND REEL BOX DIMENSIONS

Width (mm)
H
W

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM2776DBVR SOT-23 DBV 6 3000 210.0 185.0 35.0
LM2776DBVT SOT-23 DBV 6 250 210.0 185.0 35.0
LM2776DBVT SOT-23 DBV 6 250 210.0 185.0 35.0

Pack Materials-Page 2
 PACKAGE OUTLINE
DBV0006A SCALE 4.000
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

3.0 C
2.6
1.75 0.1 C
B A
1.45
PIN 1
INDEX AREA

1
6

2X 0.95
3.05
2.75
1.9 5
2

4
3
0.50
6X
0.25
0.15
0.2 C A B 4X 0 -15 (1.1) TYP
0.00
1.45
0.90
4X 4 -15

0.25
GAGE PLANE 0.22
TYP
0.08

8
TYP 0.6
0 TYP SEATING PLANE
0.3

4214840/G 08/2024

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Body dimensions do not include mold flash or protrusion. Mold flash and protrusion shall not exceed 0.25 per side.
4. Leads 1,2,3 may be wider than leads 4,5,6 for package orientation.
5. Refernce JEDEC MO-178.

[Link]
 EXAMPLE BOARD LAYOUT
DBV0006A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

PKG
6X (1.1)
1

6X (0.6)
6

SYMM
2 5
2X (0.95)

3 4

(R0.05) TYP (2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:15X

SOLDER MASK
SOLDER MASK METAL METAL UNDER OPENING
OPENING SOLDER MASK

EXPOSED METAL EXPOSED METAL

0.07 MAX 0.07 MIN

ARROUND ARROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED)

SOLDER MASK DETAILS

4214840/G 08/2024

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

[Link]
 EXAMPLE STENCIL DESIGN
DBV0006A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

PKG
6X (1.1)
1

6X (0.6)
6

SYMM
2 5
2X(0.95)

3 4

(R0.05) TYP
(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:15X

4214840/G 08/2024

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

[Link]
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Last updated 10/2025