EE105 Fall 2007 Lecture 17, Slide 1 Prof.
Liu, UC Berkeley
Lecture 17
OUTLINE
NMOSFET in ON state (contd)
Body effect
Channel-length modulation
Velocity saturation
NMOSFET in OFF state
MOSFET models
PMOSFET
Reading: Finish Chapter 6
ANNOUNCEMENTS
Wed. discussion section moved (again) to 6-7PM in 293 Cory
EE105 Fall 2007 Lecture 17, Slide 2 Prof. Liu, UC Berkeley
The Body Effect
( ) ( )
B SB B TH B SB B
ox
Si A
TH
ox
SB B Si A
ox
B Si A
ox
B Si A
B FB
ox
SB B Si A
B FB TH
V V V
C
qN
V
C
V qN
C
qN
C
qN
V
C
V qN
V V
| | | |
c
| c | c | c
|
| c
|
2 2 2 2
2
) 2 ( 2 ) 2 ( 2 ) 2 ( 2
2
) 2 ( 2
2
0 0
+ + = + + =
+
+ + + =
+
+ + =
V
TH
is increased by reverse-biasing the body-source PN junction:
is the body effect parameter.
EE105 Fall 2007 Lecture 17, Slide 3 Prof. Liu, UC Berkeley
Channel-Length Modulation
The pinch-off point moves toward the source as V
DS
increases.
The length of the inversion-layer channel becomes shorter with increasing V
DS
.
I
D
increases (slightly) with increasing V
DS
in the saturation region of operation.
( ) ( ) | |
sat D DS TH GS ox n sat D
V V V V
L
W
C I
,
2
,
1
2
1
+ =
is the channel length modulation coefficient.
|
.
|
\
|
A
+ ~
A
L
L
L L L
I
Dsat
1
1 1
DSsat DS
V V L A
EE105 Fall 2007 Lecture 17, Slide 4 Prof. Liu, UC Berkeley
and L
The effect of channel-length modulation is less for a long-
channel MOSFET than for a short-channel MOSFET.
EE105 Fall 2007 Lecture 17, Slide 5 Prof. Liu, UC Berkeley
Velocity Saturation
In state-of-the-art MOSFETs, the channel is very short (<0.1m);
hence the lateral electric field is very high and carrier drift
velocities can reach their saturation levels.
The electric field magnitude at which the carrier velocity saturates is E
sat
.
=
Si in holes for cm/s 10 6
Si in s on for electr cm/s 10 8
6
6
sat
v
v
E
EE105 Fall 2007 Lecture 17, Slide 6 Prof. Liu, UC Berkeley
Impact of Velocity Saturation
Recall that
If V
DS
> E
sat
L, the carrier velocity will saturate and hence the
drain current will saturate:
I
D,sat
is proportional to V
GS
V
TH
rather than (V
GS
V
TH
)
2
I
D,sat
is not dependent on L
I
D,sat
is dependent on W
) ( ) ( y v y WQ I
inv D
=
( )
sat TH GS ox sat inv sat D
v V V WC v WQ I = =
,
EE105 Fall 2007 Lecture 17, Slide 7 Prof. Liu, UC Berkeley
I
D,sat
is proportional to V
GS
-V
TH
rather than (V
GS
-V
TH
)
2
V
D,sat
is smaller than V
GS
-V
TH
Channel-length modulation is apparent (?)
Short-Channel MOSFET I
D
-V
DS
P. Bai et al. (Intel Corp.),
Intl Electron Devices Meeting, 2004.
EE105 Fall 2007 Lecture 17, Slide 8 Prof. Liu, UC Berkeley
In a short-channel MOSFET, the source & drain regions each support
a significant fraction of the total channel depletion charge Q
dep
WL
V
TH
is lower than for a long-channel MOSFET
As the drain voltage increases, the reverse bias on the body-drain PN
junction increases, and hence the drain depletion region widens.
V
TH
decreases with increasing drain bias.
(The barrier to carrier diffusion from the source into the channel is reduced.)
I
D
increases with increasing drain bias.
Drain Induced Barrier Lowering (DIBL)
EE105 Fall 2007 Lecture 17, Slide 9 Prof. Liu, UC Berkeley
NMOSFET in OFF State
We had previously assumed that there is no channel current
when V
GS
< V
TH
. This is incorrect!
As V
GS
is reduced (toward 0 V) below V
TH
, the potential barrier to
carrier diffusion from the source into the channel is increased.
I
D
becomes limited by carrier diffusion into the channel, rather
than by carrier drift through the channel.
(This is similar to the case of a PN junction diode!)
I
D
varies exponentially with the potential barrier height at the
source, which varies directly with the channel potential.
EE105 Fall 2007 Lecture 17, Slide 10 Prof. Liu, UC Berkeley
Sub-Threshold Leakage Current
Recall that, in the depletion (sub-threshold) region of operation,
the channel potential is capacitively coupled to the gate potential.
A change in gate voltage (AV
GS
) results in a change in channel
voltage (AV
CS
):
Therefore, the sub-threshold current (I
D,subth
) decreases
exponentially with linearly decreasing V
GS
/m
m V
C C
C
V V
GS
dep ox
ox
GS CS
/ A
|
|
.
|
\
|
+
A = A
log (I
D
)
V
GS
I
D
V
GS
mV/dec 60 ) 10 ( ln
) (log
1
10
> =
|
|
.
|
\
|
T
GS
DS
mV S
dV
I d
S
Sub-threshold swing:
EE105 Fall 2007 Lecture 17, Slide 11 Prof. Liu, UC Berkeley
Short-Channel MOSFET I
D
-V
GS
P. Bai et al. (Intel Corp.),
Intl Electron Devices Meeting, 2004.
EE105 Fall 2007 Lecture 17, Slide 12 Prof. Liu, UC Berkeley
V
TH
Design Trade-Off
Low V
TH
is desirable for high ON-state current:
I
D,sat
(V
DD
- V
TH
)
q
1 < q < 2
But high V
TH
is needed for low OFF-state current:
V
TH
cannot be
reduced aggressively.
Low V
TH
High V
TH
I
OFF,high VTH
I
OFF,low VTH
V
GS
log I
D
0
EE105 Fall 2007 Lecture 17, Slide 13 Prof. Liu, UC Berkeley
MOSFET Large-Signal Models (V
GS
> V
TH
)
Depending on the value of V
DS
, the MOSFET can be represented
with different large-signal models.
( ) ( ) | |
( ) | |
sat D DS TH GS ox sat sat D
sat D DS TH GS ox n sat D
V V V V WC v I
or
V V V V
L
W
C I
, ,
,
2
,
1 ) (
1
2
1
+ =
+ =
V
DS
<< 2(V
GS
-V
TH
)
) (
1
TH GS ox n
ON
V V
L
W
C
R
V
DS
< V
D,sat
DS
DS
TH GS ox n tri D
V
V
V V
L
W
C I
(
=
2
) (
,
V
DS
> V
D,sat
EE105 Fall 2007 Lecture 17, Slide 14 Prof. Liu, UC Berkeley
MOSFET Transconductance, g
m
Transconductance (g
m
) is a measure of how much the drain
current changes when the gate voltage changes.
For amplifier applications, the MOSFET is usually operating in
the saturation region.
For a long-channel MOSFET:
For a short-channel MOSFET:
( ) ( ) { }
( ) { }
D sat D DS ox n m
sat D DS TH GS ox n m
I V V
L
W
C g
V V V V
L
W
C g
,
,
1 2
1
+ =
+ =
GS
D
m
V
I
g
c
c
( ) { }
sat D DS ox sat m
V V WC v g
,
1 + =
EE105 Fall 2007 Lecture 17, Slide 15 Prof. Liu, UC Berkeley
MOSFET Small-Signal Model
(Saturation Region of Operation)
D D
DS
o
I I
V
r
1
~
c
c
The effect of channel-length modulation or DIBL (which cause
I
D
to increase linearly with V
DS
) is modeled by the transistor
output resistance, r
o
.
EE105 Fall 2007 Lecture 17, Slide 16 Prof. Liu, UC Berkeley
PMOS Transistor
A p-channel MOSFET behaves similarly to an n-channel
MOSFET, except the polarities for I
D
and V
GS
are reversed.
The small-signal model for a PMOSFET is the same as that for
an NMOSFET.
The values of g
m
and r
o
will be different for a PMOSFET vs. an NMOSFET,
since mobility & saturation velocity are different for holes vs. electrons.
Circuit symbol Schematic cross-section
EE105 Fall 2007 Lecture 17, Slide 17 Prof. Liu, UC Berkeley
PMOS I-V Equations
For |V
DS
| < |V
D,sat
|:
For |V
DS
| > |V
D,sat
|:
( ) | |
sat D DS DS
DS
TH GS ox p tri D
V V V
V
V V
L
W
C I
, ,
1
2
) (
(
=
( ) ( ) | |
( ) | |
sat D DS TH GS ox sat sat D
sat D DS TH GS ox p sat D
V V V V WC v I
or
V V V V
L
W
C I
, ,
,
2
,
1 ) (
1
2
1
=
=
for long channel
for short channel
EE105 Fall 2007 Lecture 17, Slide 18 Prof. Liu, UC Berkeley
CMOS Technology
It possible to form deep n-type regions (well) within a p-type
substrate to allow PMOSFETs and NMOSFETs to be co-fabricated
on a single substrate.
This is referred to as CMOS (Complementary MOS) technology.
Schematic cross-section of CMOS devices
EE105 Fall 2007 Lecture 17, Slide 19 Prof. Liu, UC Berkeley
Comparison of BJT and MOSFET
The BJT can achieve much higher g
m
than a MOSFET, for a
given bias current, due to its exponential I-V characteristic.
