Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
Chapter 4
Problem Solutions
Chapter 4
Problem Solutions
4.1
2
ni
FG 5.83x10 IJ = F 300I expL E F 1 1 I O
H 182. x10 K H 200K MN H 0.0259 0.01727 K PQ
F E IJ
= N N expG
H kT K
C
or
(a) Silicon
b g
(eV )
1.026 x10 = 3.375 exp (19.29) E g
T ( K )
kT
200
0.01727
7.68 x10
400
0.03453
2.38 x10
12
which yields
E g = 1.25 eV
600
0.0518
9.74 x10
14
For T = 300 K ,
ni cm
11
b5.83x10 g = a N
2
(b) Germanium
(c) GaAs
b g
T ( K )
ni cm
200
2.16 x10
400
8.60 x10
b g
ni cm
10
1.38
14
3.28 x10
5.72 x10
12
16
600
3.82 x10
N CO N VO = 115
. x10
4.5
4.2
F E IJ
n = N N expG
H kT K
b10 g = b2.8x10 gb1.04 x10 gFH 300T IK expFH kT112. IK
C
19
19
E EC
1
kT
1/ 2
exp
F xI = 0
H kT K
This yields
1
1/ 2
kT
x=
kT
2x
2
Then the maximum value occurs at
kT
E = EC +
2
(b)
EF E
gV 1 f F EV E exp
kT
FG E IJ
H kT K
So
n aT f F T I
L F 1 1 IJ OP
= G J exp M E G
n aT f H T K
N H kT kT K Q
ni = N CO N VO (T ) exp
F I
H K
4.4
F xI
H kT K
T = 381K
1/ 2
x exp
a f
4.3
Computer Plot
Now, to find the maximum value
x
d gC f F
1 1/ 2
x exp
dx
2
kT
14
By trial and error
29
gC f F
Then
F 112. I = b2.912 x10 gF T I
exp
H kT K
H 300 K
F 1.25 I
H 0.0259 K
LM a E E f OP
N kT Q
LM a E E f OP expLM a E E f OP
exp
N kT Q N kT Q
Let E E C x
Then
12
E E C exp
N VO (300) exp
or
(a) g C f F
CO
At T2 = 300 K kT = 0.0259 eV
At T1 = 200 K kT = 0.01727 eV
Then
EV
LM a f OP
N
Q
LM a E E f OP expLM a E E f OP
E exp
N kT Q N kT Q
f
Let EV E x
37
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
Then
F xI
H kT K
To find the maximum value
d g a1 f f
d L
xI O
F
x exp
H kT K QP = 0
dx
dx MN
a
gV 1 f F
x exp
= exp
or
4.6
ni ( B )
a f=
na E f
E1 E C
n E1
E2 EC
where
4 kT
exp
Silicon: mp = 0.56mO , mn = 1.08mO
*
E Fi E midgap = 0.0128 eV
Germanium: mp = 0.37mO , mn = 0.55mO
*
E Fi E midgap = 0.0077 eV
kT
Gallium Arsenide: mp = 0.48mO , mn = 0.067 mO
*
E Fi E midgap = +0.038 eV
4.11
or
LM a E E f OP
N kT Q
kT
2
LM F 1 I OP = 2 2 exp(3.5)
= 2 2 exp 4
N H 2K Q
na E f
= 0.0854
na E f
n E1
Fm I
= kT lnG J
4
Hm K
3
E Fi E midgap
E1 = E C + 4 kT and E 2 = E C +
a f=
na E f
4.10
= 47.5
4.9
Computer Plot
LM a E E f OP
exp
N kT Q
LM a E E f OP
exp
N kT Q
1
LM (1 1.2) OP = expLM +0.20 OP
N 2(0.0259) Q N 2(0.0259) Q
ni ( A)
Same as part (a). Maximum occurs at
kT
= EV E
x=
2
or
kT
E = EV
2
Then
Chapter 4
Problem Solutions
Fm I
= kT lnG J
E E
4
Hm K
3
F 1.4 I
= (0.0259 ) ln
H 0.62 K
4
*
(a)
Fi
midgap
E Fi E midgap = +0.0158 eV
(b)
E Fi E midgap =
4.7
Computer Plot
(0.0259) ln
F 0.25I
H 110. K
4
E Fi E midgap = 0.0288 eV
4.8
FG E IJ
H kT K = expLM b E E g OP
n ( A)
=
n ( B)
F E IJ N kT Q
expG
H kT K
or
L b E E g OP
n ( A)
= exp M
n ( B)
N 2kT Q
exp
4.12
gA
gA
gA
( kT ) ln
gB
FG N IJ
HN K
2
1
F 1.04 x10 IJ = 0.495(kT )
= ( kT ) lnG
H 2.8x10 K
2
E Fi E midgap =
gB
19
19
gB
38
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
kT (eV )
T ( K )
E Fi E midgap (eV )
Chapter 4
Problem Solutions
a E E f dE
FEE I
1 + exp
H kT K
LM a E E f OPdE
C z a E E f exp
N kT Q
= C1
EC
200
0.01727
400
0.03453
0.0085
0.017
600
0.0518
0.0256
or
nO
EC
Let
4.13
Computer Plot
so that dE = kT d
kT
We can write
E E F = E EC + EC E F
Then
EC E F
nO = C1 exp
kT
4.14
Let g C ( E ) = K = constant
Then,
nO =
EC
g C ( E ) f F ( E )dE
FEE I
H kT K
LM a E E f OPdE
K z exp
N kT Q
EC
f a fa f
LM a f OP
N
Q
LM a E E f OPdE
z a E E f exp
N kT Q
=K
E EC
dE
1 + exp
EC
or
= C1 exp
Let
E EF
fa f
LM a f OP LM a f OP
N
Q N
Q
LM a E E f OPz exp()d
n = K kT exp
N kT Q
which becomes
LM a E E f OP
n = K kT exp
N kT Q
C
4.16
We have
r1
aO
=r
( 1) 0 = +1
LM a E E f OP
N kT Q
C
Fm I
Hm K
O
*
For Germanium, r = 16 , m = 0.55mO
Then
1
r1 = (16)
a O = 29(0.53)
0.55
so
*
f for E E
nO = C1 ( kT ) exp
4.15
Let g C ( E ) = C1 E E C
exp( )d =
So
( kT ) exp( ) ( kT )d
We find that
nO =
so that dE = kT d
kT
We can write
E E F = EC E F EC E
so that
E EF
EC E F
exp
= exp
exp( )
kT
kT
The integral can then be written as
EC
LM a E E f OP
N kT Q
F I
H K
r1 = 15.4 A
g C ( E ) f F ( E )dE
The ionization energy can be written as
F m IJ FG IJ (13.6)
E =G
H m KH K
EC
39
eV
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
0.55
(16)
Chapter 4
Problem Solutions
LM a E E f OP
N kT Q
F 0.90 I
= 2.8 x10 exp
H 0.0259 K
(13.6) E = 0.029 eV
nO = N C exp
18
4.17
r1
We have
aO
=r
Fm I
Hm K
or
O
*
nO = 2.27 x10 cm
4
For GaAs, r = 131
. , m = 0.067 mO
Then
1
(0.53)
r1 = (131
.)
0.067
or
F
H
4.20
(a) T = 400 K kT = 0.03453 eV
I
K
r1 = 104 A
F 400 I = 7.24 x10
N = 4.7 x10
H 300 K
Then
LM a E E f OP
n = N exp
N kT Q
F 0.25 I
= 7.24 x10 exp
H 0.03453K
3/ 2
17
The ionization energy is
FG m IJ FG IJ (13.6) = 0.067 (13.6)
H m KH K
(131
.)
O
or
E=
or
E = 0.0053 eV
. x10 cm
nO = 519
14
(a) pO =
ni
nO
b15. x10 g
=
10
5 x10
pO = 4.5 x10 cm
15
(b)
Also
2
NV
F 400 I
= 7 x10
H 300 K
3/ 2
= 1.08 x10 cm
18
19
and
. eV
E F EV = 1.42 0.25 = 117
Then
117
.
19
pO = 1.08 x10 exp
0.03453
or
, pO > nO p-type
FG p IJ
Hn K
F 4.5x10 IJ
= (0.0259 ) lnG
H 1.5x10 K
E Fi E F = kT ln
F
H
O
i
15
I
K
pO = 2.08 x10 cm
4
10
(b)
or
E Fi E F = 0.3266 eV
FG N IJ
Hn K
F 4.7 x10 IJ
= (0.0259 ) lnG
H 5.19 x10 K
E C E F = kT ln
4.19
17
LM a E E f OP
N kT Q
F 0.22 I
= 1.04 x10 exp
H 0.0259 K
pO = N V exp
14
or E C E F = 0.176 eV
Then
E F EV = 1.42 0.176 = 1.244 eV
and
1.244
18
pO = 7 x10 exp
0.0259
19
so
pO = 2.13 x10 cm
15
cm
17
4.18
17
Assuming
. 0.22 = 0.90 eV
E C E F = 112
Then
or
40
g FH
3
pO = 9.67 x10 cm
I
K
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
4.21
or
EF
From (b)
nO =
ni
pO
12
111
. x10
16
15
4.23
Then
E C E F = 112
. 0.24 = 0.88 eV
So
EC E F
nO = N C exp
kT
fO
PQ
F 0.88 I
exp
H 0.0259 K
Fi
or
pO = 1.33 x10 cm
12
ni ( 400 K ) = 3.28 x10 cm , kT = 0.03453 eV
Then
3
4.22
15
. x10
E Fi E F = kT ln
FE E I
H kT K
F 0.35 I
exp
H 0.0259 K
(a) pO = ni exp
10
Fi
FG 1.33x10 IJ
H 3.28x10 K
12
9
or
E Fi E F = 0.207 eV
(c) From (a)
(b)
From Problem 4.1, ni ( 400 K ) = 2.38 x10 cm
12
nO =
F 400I = 0.03453 eV
H 300K
Then
Fp I
E E = kT lnG J
Hn K
F 111. x10 IJ
= ( 0.03453) lnG
H 2.38x10 K
ni
pO
b18. x10 g
=
6
12
1.33 x10
or
kT = ( 0.0259 )
nO = 2.44 cm
From (b)
b3.28x10 g
=
9
Fi
= (0.03453) ln
or
. x10 cm
pO = 111
FG p IJ
Hn K
i
16
(b) From Problem 4.1,
or
4
FE E I
H kT K
F 0.35 I
= b1.8 x10 g exp
H 0.0259 K
(a) pO = ni exp
LM a
N
nO = 4.9 x10 cm
nO = 510
. x10 cm
19
= 2.8 x10
b2.38x10 g
=
or
19
nO = 2.03 x10 cm
LM a E E f OP
N kT Q
F N IJ
E = kT lnG
Hp K
F 1.04 x10 IJ = 0.24 eV
= (0.0259 ) lnG
H 10 K
pO = N V exp
Chapter 4
Problem Solutions
nO
16
1.33 x10
12
or
nO = 8.09 x10 cm
6
12
or
E Fi E F = 0.292 eV
(c)
From (a)
2
nO =
ni
pO
b
=
15
. x10
10
4.24
For silicon, T = 300 K , E F = EV
EV E F
kT
We can write
16
111
. x10
or
41
= 0 F1/ 2 ( ) = 0.60
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
2
pO =
N V F1/ 2 ( ) =
b1.04 x10 g(0.60)
0 = Kx
19
pO = 7.04 x10 cm
4.25
Silicon, T = 300 K , nO = 5 x10 cm
We have
2
nO =
N C F1/ 2 F
or
2
19
19
5 x10 =
2.8 x10 F1/ 2 F
which gives
F1/ 2 F = 158
.
Then
E EC
F = 1.3 = F
kT
(
or E F E C = 1.3)(0.0259 )
19
a f
Define x =
LM a
N
kT
nO = 2.8 x10
n( E ) n( x ) = K x exp( x )
To find maximum n( E ) n( x ) , set
or
exp( x ) + x
1/ 2
fO
PQ
fa
.045
OP
3
b g expLMN 0.00259
Q
= b2.8 x10 g exp( 4.737)
Then
dx
kT
4.27
(a) Silicon: We have
EC E F
nO = N C exp
kT
We can write
EC E F = EC Ed + Ed E F
For
E C E d = 0.045 eV , E d E F = 3kT
E EC
1/ 2
EV E
= 0 . Using the results from above, we
dx
find the maximum at
1
E = EV kT
2
3/ 2
LM 1 x
N2
dp( x )
Define
=0= K
To find the maximum of p( E ) p( x ) , set
dn( x )
p( x ) = K x exp( x )
x=
3/ 2
Then
E E C exp
3/ 2
EV E exp
LM a E E f OP
h
N kT Q
or
4 b 2 m g
LM a E E f OP
n( E ) =
exp
h
N kT Q
EE
LM a E E f OP
kT
exp
kT
N kT Q
n( E ) =
3/ 2
4.26
For the electron concentration
n( E ) = g C ( E ) f F ( E )
The Boltzmann approximation applies so
*
b g
4 2 m p
E C E F = 0.034 eV
b g
LM 1 x OP
N2 Q
LM a E E f OP
h
N kT Q
or
4 b2 m g
LM a E E f OP
p( E ) =
exp
h
N kT Q
E E
LM a E E f OP
kT
exp
kT
N kT Q
p( E ) =
a f
4 2 mn
exp( x )
g a f
1/ 2
which yields
1 E EC
1
E = E C + kT
x= =
2
2
kT
For the hole concentration
p( E ) = gV ( E ) 1 f F ( E )
From the text, using the Maxwell-Boltzmann
approximation, we can write
or
18
Chapter 4
Problem Solutions
19
19
( 1) exp( x )
OP
Q
or
nO = 2.45 x10 cm
17
We also have
42
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
LM a E E f OP
N kT Q
Again, we can write
E E = aE E f + aE E f
pO = N V exp
nO =
(b)
nO =
nO =
or
pO =
5 x10
nO
15
or
nd
= 8.85 x10
And
FN N I
H 2 K
a
FEE I
H kT K
= aE E f + aE E f
1 + exp
2
2
Then
FG 10 IJ + b2.4 x10 g
H2K
2
13
13
F
H
or
pO = 2.95 x10 cm
13
Now
E EF
C
C
or
E E F = kT + 0.245
Then
1
fF (E ) =
0.245
1 + exp 1 +
0.0259
+ ni
f F ( E ) = 2.87 x10
and
43
13
fF (E ) =
+ ni
15
13
ni
Nd
4.29
(a) Ge:
F
I
H
K
1
=
1
F 0.20 I
1 + exp
H 0.0259 K
2
4.28
Computer Plot
13
I
K
4.30
For the donor level
nd
1
=
E EF
1
Nd
1 + exp d
kT
2
or
10
11
18
Na
pO = 115
. x10 cm
OP
b g LMN
Q
= b7 x10 g exp( 4.332)
Na Nd
FG 5x10 IJ + b2.4 x10 g
H 2 K
15
b2.4 x10 g
=
Assume E a EV = 0.0345 eV
Then
0.0345
18
3
pO = 7 x10 exp
0.0259
pO =
and
or
pO =
5 x10
15
17
16
FN
H
nO 5 x10 cm
OP
b g LMN
Q
= b4.7 x10 g exp( 3.224)
pO = 9.20 x10 cm
13
or
(b)
GaAs: Assume E C E d = 0.0058 eV
Then
0.0058
17
3
nO = 4.7 x10 exp
0.0259
16
Nd Na
Then
19
nO = 1.87 x10 cm
2.95 x10
pO
13
OP
b
g LMN
Q
= b1.04 x10 g exp( 4.737)
pO = 9.12 x10 cm
13
ni
nO = 1.95 x10 cm
For
E F E a = 3kT , E a EV = 0.045 eV
Then
0.045
19
pO = 1.04 x10 exp 3
0.0259
16
b2.4 x10 g
=
Chapter 4
Problem Solutions
I
K
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
= 5 x10 +
13
4.31
(a) nO = N d = 2 x10 cm
15
pO =
ni
nO
b15. x10 g
=
10
2 x10
14
Also
2
. x10 cm
pO = 1125
pO =
(b)
16
nO =
ni
pO
pO =
10
nO =
13
F N I +n
H2K
+ b5 x10 g + b 2.38 x10 g
2
12
Also
2
nO =
ni
pO
b2.38x10 g
=
12
(e)
(d)
gb
18
pO = N a = 10 cm
14
and
2
I expF 112. I
gFH 500
H 0.04317 K
300 K
nO =
ni
pO
b3.28x10 g
=
9
10
14
nO =
Nd
2
(e)
FN I
H2K
d
+ ni
or
44
kT = 0.04317 eV
I expF 1.42 I
gb7 x10 gFH 500
H 0.04317 K
300 K
3
ni = 4.7 x10
nO = 1.08 x10 cm
13
I expF 1.42 I
gb7 x10 gFH 400
H 0.03453K
300 K
9
or
ni = 8.54 x10 cm
Now
17
ni = 3.28 x10 cm
Now
19
1.04 x10
16
or
T = 500 K kT = 0.04317 eV
19
10
kT = 0.03453 eV
14
ni = 2.8 x10
ni = 4.7 x10
10
10
pO
b1.8x10 g
=
nO = 5.66 x10 cm
ni
nO = pO = ni = 1.8 x10 cm
or
14
(c)
pO = 1.0 x10 cm
15
13
2 x10
nO = 3.24 x10 cm
= 5 x10
16
or
nO
b1.8x10 g
=
pO = N a = 10 cm
19
ni
(b)
3
F 400 I expF 112. I
= b2.8 x10 gb1.04 x10 g
H 300 K H 0.03453K
Na
14
pO = 1.62 x10 cm
(d)
T = 400 K kT = 0.03453 eV
pO =
1.49 x10
15
. x10 cm
nO = pO = ni = 15
12
13
(a) nO = N d = 2 x10 cm
(c)
ni = 2.38 x10 cm
nO
b8.54 x10 g
=
4.32
16
19
nO = 2.25 x10 cm
ni
ni
13
10
13
pO = 4.89 x10 cm
b15. x10 g
=
10
13
nO = 1.49 x10 cm
15
pO = N a = 10 cm
b5x10 g + b8.54 x10 g
or
Chapter 4
Problem Solutions
17
18
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
ni = 2.81x10 cm
Now
11
4.34
For T = 450 K
14
pO =
ni
nO
b2.81x10 g
=
11
10
ni
14
pO = 7.90 x10 cm
8
or
N a > N d p-type
(b)
13
pO = 15
. x10 cm
13
ni
pO
b15. x10 g
15
. x10
7
+ ni
1.5 x10 8 x10
14
FG 1.5x10 8x10 IJ + b1.72 x10 g
H 2 K
15
13
FN N I
H 2 K
15
nO = 1.5 x10 cm
Ge:
Na Nd
pO =
or
nO =
(a)
13
10
19
13
pO = N a N d = 2.5 x10 1x10
19
ni = 1.72 x10 cm
4.33
(a) N a > N d p-type
(b) Si:
Then
F 450 I
= b2.8 x10 gb1.04 x10 g
H 300 K
L 112.
OP
exp M
N (0.0259)a450 300f Q
3
nO = N d = 10 cm
Also
Chapter 4
Problem Solutions
14
13
or
pO N a N d = 7 x10 cm
14
F N N I +n
H 2 K
2
F 1.5x10 IJ + FG 15. x10 IJ + b2.4 x10 g
=G
H 2 K H 2 K
pO =
Na Nd
Then
13
13
nO =
13
13
Then
2
nO =
ni
pO
b2.4 x10 g
=
13
3.26 x10
7 x10
14
(c)
Total ionized impurity concentration
N I = N a + N d = 1.5 x10 + 8 x10
15
N I = 2.3 x10 cm
15
13
4.35
GaAs:
. x10 cm
pO = 15
nO =
ni
pO
b15. x10 g
=
10
2 x10
. x10 cm
nO = 1125
15
And
pO
b1.8x10 g
6
ni
13
15
. x10
nO = 0.216 cm
14
or
nO = 1.77 x10 cm
nO =
13
11
13
13
pO
b1.72 x10 g
=
nO = 4.23 x10 cm
or
pO = 3.26 x10 cm
ni
nO > pO n-type
45
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
4.36
nO = 1x10 cm
16
F I = 0.01727 eV
H 300 K
F 200 I
= b4.7 x10 gb 7 x10 g
H 300 K
LM 1.42 OP
exp
N 0.01727 Q
kT = ( 0.0259 )
200
Then
2
pO =
ni
or
17
18
ni = 1.38 cm
10
16
pO = N a N d = 3 x10 2 x10
16
pO = 2.8 x10 cm
16
Then
pO = 0.617 cm
ni
nO =
pO
b15. x10 g
=
10
2.8 x10
16
nO = 8.04 x10 cm
(b) nO = 4.5 x10 cm electrons: minority
4
4.38
Computer Plot
carrier
2
pO =
4.39
Computer Plot
13
F N I +n
H2K
b10 g + b2 x10 g
pO =
nO
so
5 x10 = N a 5 x10 N a = 10 cm
15
13
13
13
4.5 x10
pO = N a N d
nO = 3.24 x10 cm
ni
10
(c)
b2 x10 g
=
13
3.24 x10
N d = 5 x10 cm
15
4.43
pO = 1.23 x10 cm
13
E Fi E F = kT ln
Donor impurity
FG p IJ
Hn K
O
i
For Germanium:
4.41
(a) N d > N a n-type
nO = N d N a = 2 x10 1x10
16
16
concentration
13
15
Acceptor impurity concentration,
or
Then
nO
b15. x10 g
=
15
= 10 +
ni
pO = 5 x10 cm holes: majority carrier
4.40
n-type, so majority carrier = electrons
2
4.42
(a) nO < ni p-type
4.37
Computer Plot
nO = 5 pO nO = 3.09 cm
Nd
15
or
And
nO =
N a > N d p-type
10
(b)
or\
pO =
nO
b15. x10 g
=
4
nO pO = ni 5 pO = ni
ni
ni
pO = 2.25x10 cm
Now
2
Chapter 4
Problem Solutions
16
or
46
b g
T ( K )
kT (eV )
ni cm
200
0.01727
2.16 x10
400
0.03454
8.6 x10
600
0.0518
3.82 x10
10
14
16
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
F N I +n
+
p =
H2K
2
p bcm g
T ( K )
b1.504 x10 g = b4.7 x10 gb7 x10 gFH 300T IK
L 1.42 OP
exp M
N (0.0259)aT 300f Q
3
Na
and N a = 10 cm
15
15
1.0 x10
400
1.49 x10
600
3.87 x10
4.44
E F E Fi = kT ln
14
E Fi E F ( eV )
200
15
0.01898
16
0.000674
FG n IJ
Hn K
O
4.48
T = 300 K ni = 2.4 x10 cm
F N I +n
H2K
2
N bcm g
n bcm g
d
14
1.05 x10
16
10
10
18
10
14
0.156
0.2755
Now
ni = 0.05nO
so
3
4
(0.0259) ln(10)
(b)
Impurity atoms to be added so
E midgap E F = 0.45 eV
0.0382
18
(i) p-type, so add acceptor impurities
(ii) E Fi E F = 0.0447 + 0.45 = 0.4947 eV
pO = ni exp
E Fi E midgap = +0.0447 eV
E F E Fi ( eV )
16
FN I
H2K
10
4.45
Fm I
= kT lnG J
4
Hm K
3
10
T 762 K
(a) E Fi E midgap
nO =
F E E I = 10 expF 0.4947 I
H kT K
H 0.0259 K
Fi
or
+ ni
nO = 1.5 x10 +
15
1.5 x10
pO = N a = 1.97 x10 cm
13
+ (0.05)nO
so
N d = 5 x10 + 2.8 x10
15
nO = 3.0075 x10 cm
Then
14
so
16
4.50
(a) pO = N a = N V exp
or
47
15
N d = 1.2 x10 cm
FG IJ
H K
= 5 x10 + 6.95 x10
15
ni = 1504
x10 cm
.
We have
Eg
2
ni = N C N V exp
kT
so
19
LM a E E f OP
N kT Q
F 0.215I
exp
H 0.0259 K
nO = N d N a = N C exp
which yields
15
4.49
15
18
4.47
Computer Plot
13
Nd
17
4.46
Computer Plot
Nd
By trial and error
0.1855
For Germanium,
nO =
Chapter 4
Problem Solutions
LM a E E f OP
N kT Q
F
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
exp
LM +a E E f OP = N
N kT Q N
F
1.04 x10
7 x10
19
E F EV = (0.0259) ln 1.49 x10
.45 I
g FH 0.00259
K
pO = 1.8 x10 exp
15
= 1.49 x10
Then
Chapter 4
Problem Solutions
6
pO = 6.32 x10 cm
13
Now
pO < N a , Donors must be added
pO = N a N d N d = N a pO
or
E F EV = 0.189 eV
so
N d = 10 6.32 x10
15
(b)
If E F EV = 0.1892 0.0259 = 0.1633 eV
Then
0.1633
19
N a = 1.04 x10 exp
0.0259
F
H
N d = 9.368 x10 cm
14
I
K
= 1.90 x10 cm
16
13
4.53
FG N IJ
Hn K
F 2 x10 IJ
= (0.0259 ) lnG
H 15. x10 K
(a) E F E Fi = kT ln
so that
15
N a = 1.90 x10 7 x10
16
15
N a = 1.2 x10 cm
16
10
E F E Fi = 0.3056 eV
Acceptor impurities to be added
4.51
(b)
F N IJ = (0.0259) lnFG 10 IJ
= kT lnG
H 15. x10 K
Hn K
(a) E F E Fi
FG N IJ
Hn K
F 10 IJ
= (0.0259 ) lnG
H 15. x10 K
E Fi E F = kT ln
15
10
16
10
or
E Fi E F = 0.3473 eV
E F E Fi = 0.2877 eV
(b)
E Fi E F = kT ln
(c)
FG N IJ = 0.2877 eV
Hn K
E F = E Fi
(d)
kT = 0.03453 eV , ni = 2.38 x10 cm
12
(c)
For (a), nO = N d = 10 cm
15
For (b)
2
nO =
ni
pO
b
=
10
15
. x10
15
10
E Fi E F = kT ln
FG p IJ
Hn K
O
i
= (0.03453) ln
nO = 2.25 x10 cm
5
FG 10 IJ
H 2.38x10 K
14
12
E Fi E F = 0.1291 eV
(e)
4.52
kT = 0.04317 eV , ni = 8.54 x10 cm
13
FG p IJ
Hn K
Fp I
= (0.0259 ) lnG J = 0.45 eV
Hn K
E Fi E F = kT ln
E F E Fi = kT ln
FG n IJ
Hn K
O
i
= ( 0.04317 ) ln
O
i
Then
FG 1.49 x10 IJ
H 8.54 x10 K
E F E Fi = 0.0024 eV
48
14
13
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
4.54
(e)
FG N IJ
Hn K
F 2 x10 IJ
= (0.0259 ) lnG
H 1.8x10 K
(a) E F E Fi = kT ln
Chapter 4
Problem Solutions
kT = 0.04317 eV , ni = 2.81x10 cm
11
E F E Fi = kT ln
15
FG n IJ
Hn K
O
i
= ( 0.04317 ) ln
E F E Fi = 0.5395 eV
(b)
E Fi E F
FG 10 IJ
H 2.81x10 K
14
11
E F E Fi = 0.2536 eV
F N IJ
= kT lnG
Hn K
F 10 IJ
= (0.0259 ) lnG
H 1.8x10 K
a
4.55
p-type
16
E F = E Fi
O
i
E Fi E F = 0.5811 eV
(c)
FG p IJ
Hn K
F 5x10 IJ
= (0.0259 ) lnG
H 15. x10 K
E Fi E F = kT ln
15
10
E Fi
E Fi E F = 0.3294 eV
(d)
kT = 0.03453 eV , ni = 3.28 x10 cm
9
F 10 IJ
= ( 0.03453) lnG
H 3.28x10 K
14
E Fi E F
E Fi E F = 0.3565 eV
49
Semiconductor Physics and Devices: Basic Principles, 3rd edition
Solutions Manual
(page left blank)
50
Chapter 4
Problem Solutions
