An Introduction to Semiconductor Devices Chapter 2

Solutions Manual Problem Solutions

______________________________________________________________________________________

Chapter 2
Problem Solutions h 6.625x10
−34

λ= = −23
⇒
2.1 p 2.31x10
hc hc or
E = hν = ⇒λ= λ = 0.287 A
°

λ E
b g
Gold: E = 4.90 eV = (4.90) 1.6 x10
−19
J
_______________________________________

So
b6.625x10 gb3x10 g ⇒ 2.54 x10
2.3
−34 10
3 3
λ=
−5
E avg = kT = (0.0259) ⇒
(4.90)b1.6 x10 g −19
cm
2 2
or or
λ = 0.254 μm E avg = 0.01727 eV

Cesium: E = 1.90 eV = (1.90) 1.6 x10 b −19

g J
Now
pavg = 2 mE avg
So

λ=
b6.625x10 gb3x10 g ⇒ 6.54 x10
−34 10
−5 = b
2 9.11x10
−31
g(0.01727)b1.6x10 g −19

(1.90)b1.6 x10 g −19

cm
or
−26
or pavg = 7.1x10 kg − m / s
λ = 0.654 μm
Now
_______________________________________ −34
h 6.625x10
λ= = −26
⇒
2.2 p 7.1x10
−19
(a) Electron: (i) K.E. = T = 1 eV = 1.6 x10 J or
p= 2mT = b
2 9.11x10
−31
gb1.6x10 g −19 λ = 93.3 A°
or _______________________________________
−25
p = 5.4 x10 kg − m / s 2.4

λ=
h
p
=
6.625x10
5.4 x10
−25
−34

⇒ (a) E =
1
2
mv =
2 1
2
b9.11x10 gb2 x10 g −31 4 2

or
or −22 −3
E = 1822
. x10 J ⇒ E = 114
. x10 eV
λ = 12.3 A
°

Also
b gb2 x10 g ⇒
−17
(ii) K.E. = T = 100 eV = 1.6 x10 J −31
p = mv = 9.11x10
4

−24
p= 2 mT ⇒ p = 5.4 x10 kg − m / s −26
p = 1822
. x10 kg − m / s
h
λ= ⇒ λ = 1.23 A
°
Now
p h 6.625x10
−34

−19 λ= = ⇒
(b) Proton: K.E. = T = 1 eV = 1.6 x10 J p 1822
. x10
−26

p= 2 mT = b
2 1.67 x10
−27
gb1.6x10 g −19
λ = 364 A
°

or (b)
−23 −34
p = 2.31x10 kg − m / s h 6.625x10
p= = ⇒
λ
−10
125 x10

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Solutions Manual Problem Solutions
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p = 5.3x10
−26
kg − m / s n = 1 ⇒ E1 = −13.58 eV
Also n = 2 ⇒ E 2 = −3.395 eV
−26
p 5.3 x10 n = 3 ⇒ E 3 = −151
. eV
v= = = 5.82 x10 m / s
4
−31
m 9.11x10 n = 4 ⇒ E 4 = −0.849 eV
or
_______________________________________
v = 5.82 x10 cm / s
6

Now 2.7
We have
E=
1
mv =
2 1
b9.11x10 gb5.82 x10 g −31 4 2

1 F 1I
FG −r IJ
⋅G J
3/ 2

π Ha K
Ha K
2 2 ψ 100 = exp
or o o
−21 −3
E = 154
. x10 J ⇒ E = 9.64 x10 eV and
1 F 1I F −2r IJ 3
_______________________________________
P = 4πr ψ ψ = 4πr ⋅ ⋅ G J expG
π Ha K Ha K
2 * 2
100 100
2.5
b gb g
o o
−34 8
or
F −2r IJ
hc 6.625x10 3x10
(a) E = hν = =
⋅ r expG
4
λ
−10
P=
aa f H a K
1x10 2
3
or o o
−15
E = 1.99 x10 J To find the maximum probability
Now dP(r )
E = e ⋅ V ⇒ 1.99 x10
−15
b
= 1.6 x10
−19
gV dr
=0

so 4 RSr FG −2 IJ expFG −2r IJ + 2r expFG −2r IJ UV

=
aa f T H a K H a K H a KW
2

V = 12.4 x10 V = 12.4 kV

3 3
o o o o

(b) p = 2 mE = b
2 9.11x10
−31
gb1.99 x10 g −15 which gives
−r
−23 0= + 1 ⇒ r = ao
= 6.02 x10 kg − m / s ao
Then
−34
or r = a o is the radius that gives the greatest
h 6.625x10
λ= ⇒ λ = 0.11 A
° probability.
= −23
p 6.02 x10 _______________________________________
_______________________________________
2.8
2.6 (a) (i) 1-valence electron; For example,
Li, Na, K
− mo e
4

a4π ∈ f 2= n ( J )
En = (ii) 4-valence electrons; For example,
2 2 2
C, Si, Ge
o

3
(b) (i) From group VII elements - needs 1
me
a4π ∈ f 2= n (eV )
electron to complete valence energy shell.
= o
2 2 2 (ii) Inert elements
o

−b9.11x10 gb1.6 x10 g

3
_______________________________________
−31 −19

= ⇒
4π b8.85x10 g 2b1.054 x10 g n
−12 2 −34 2 2.9

z
2
∞

Ψ ⋅ Ψ dx = 1
*
−13.58 Note that
En = 2
(eV ) 0
n Function has been normalized
Then (a) Now

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An Introduction to Semiconductor Devices Chapter 2
Solutions Manual Problem Solutions
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L
P= z M
ao 4
F −xI O
expG J P dx
2
2 or
(eV )
H a KQ
−3
E = 3.76 x10 n
2

N 0
a o o Then
2
z F −2 x IJdx
expG
ao 4
n = 1 ⇒ E1 = 3.76 x10 eV
−3

=
a Ha K
o 0 o n = 2 ⇒ E 2 = 150
. x10 eV
−2

2 F −a I F −2 x IJ
expG
ao 4
n = 3 ⇒ E 3 = 3.38 x10 eV
−2

a H 2 K Ha K
= o
_______________________________________
o o 0

or
L F −2a IJ − 1OP = 1 − expF −1I
P = −1MexpG
2.11
=nπ
H 2K
2 2 2

N H 4a K Q
o
(a) E = 2
o 2ma
which yields
P = 0.393 =
b1.054 x10 g π n −34 2 2 2

2b9.11x10 gb12 x10 g

−31 −10 2
(b)
F
P= z G
F −xII
expG J J dx
ao 2
2
2

= 4.81x10 n
−20 2
(J)
H a H a KK
ao 4 o o So
2
z F −2 x IJdx
expG
ao 2 E1 = 4.18 x10
−20
J ⇒ E1 = 0.261 eV
=
a Ha K o ao 4 o
E 2 = 1.67 x10
−19
J ⇒ E 2 = 1.04 eV

2 F −a I F −2 x IJ
expG
ao 2 (b)

a H 2 K Ha K
= o
hc hc
E 2 − E1 = hν = ⇒λ=
o o ao 4
λ ΔE
or or
LM F −1I OP b6.625x10 gb3x10 g ⇒ −34

H 2 KQ
8
P = −1 exp( −1) − exp
N λ=
1.67 x10
−19
− 4.18 x10
−20

which yields
λ = 159
−6
P = 0.239 . x10 m
(c) or

F
P = zG
F −xII
expG J J dx
ao
2
2 λ = 159
. μm

Ha 0
H a KK o o
_______________________________________

2
z F −2 x IJdx = 2 F −a I expFG −2 x IJ
expG
ao ao
2.12
The 3-D wave equation in cartesian coordinates,
=
Ha K aH2K Ha K
o

a for V(x,y,z) = 0
∂ ψ ( x, y , z) ∂ ψ ( x, y, z) ∂ ψ ( x, y, z)
o 0 o o o 0 2 2 2
or + +
P = −1 exp( −2) − 1 ∂x ∂y ∂z
2 2 2

which yields 2 mE
P = 0.865 ψ ( x, y, z) = 0 +
=
2

_______________________________________
Use separation of variables, so let
2.10 ψ ( x , y , z ) = X ( x )Y ( y )Z ( z )

E=
=nπ
2 2 2

=
b1.054 x10 g π n −34 2 2 2 Substituting into the wave equation, we get

2b9.11x10 gb100 x10 g

2 −31 −10 2
∂ X ∂Y ∂ Z
2 2 2
2 ma 2 mE
YZ + XZ + XY + XYZ = 0
∂x ∂y ∂z =
2 2 2 2
so
E = 6.018 x10 n
−22 2
(J)

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Solutions Manual Problem Solutions
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Dividing by XYZ and letting k =

2 2mE
, we R| 2b9.11x10 g(6 − 2.2)b1.6x10
=S
−31 −19
g U|V 1/ 2

=
|T b1.054 x10 g |W
2
−34 2
obtain
1 ∂ X 1 ∂Y 1 ∂ Z
2 2 2
or
⋅ 2 + ⋅ 2 + ⋅ 2 +k =0
2
(1) −1
K2 = 9.986 x10 m
9
X ∂x Y ∂y Z ∂z
−10
We may set For a = 10 m
1 ∂ X
2
∂ X
2
F 2.2 I F1 − 2.2 I exp −2b9.98x10 gb10 g
⋅ 2 = − k x so + kx X = 0
H 6 KH 6 K
2 2 −10
T = 16
9

X ∂x ∂x
2

Solution is of the form

a f a f
or
X ( x ) = A sin k x x + B cos k x x T = 0.504
Boundary conditions: X (0) = 0 ⇒ B = 0 For a = 10 m
−9

nx π T = 7.88 x10
−9

and X ( x = a ) = 0 ⇒ k x =
a _______________________________________
where n x = 1 , 2 , 3 ,...
2.14
Similarly, let Assume that Equation (E.27) is valid:
1 ∂Y
2

⋅ 2 = − k y and
2 1 ∂ Z
⋅ 2 = −kz
2
2
FG E IJ FG1 − E IJ expa−2 K af
Y ∂y Z ∂z
Applying the boundary conditions, we find
T = 16
HV KH V K
O O
2

(a) For m = (0.067)mo

nyπ
ky =
a
, n y = 1 , 2 , 3 ,...
K2 =
a
2 m VO − E f
=
2
nπ
k z = z , nz = 1 , 2 , 3 , ...
a R| 2(0.067)b9.11x10 g(0.8 − 0.2)b1.6x10
=S
−31 −19
g U|V 1/ 2

From Equation (1) above, we have

−kx − k y − kz + k = 0
2 2 2 2 |T b1.054 x10 g −34 2
|W
or
or −1
K2 = 1.027 x10 m
9
2 mE
kx + k y + kz = k =
2 2 2 2
Then
=
F 0.2 I F1 − 0.2 I exp −2b1.027 x10 gb15x10 g
2

H 0.8 K H 0.8 K
−10
so that T = 16
9

bn + n + n g
hπ
2 2

E ⇒ En n n =
2 2 2
2 x y z or
2ma T = 0.138
x y z

_______________________________________
(b) For m = (1.08)mo
2.13
For VO = 6 eV , E = 2.2 eV
R| 2(1.08)b9.11x10 g(0.8 − 0.2)b1.6x10
K =S
−31 −19
g U|V 1/ 2

We have that |T
2
b1.054 x10 g −34 2
|W
FG E IJ FG1 − E IJ expa−2 K af or
T = 16
HV KH V K O O
2
K2 = 4.124 x10 m
9 −1

Then
b
where

K =
2 maV − E f O
T = 3 exp −2 4.124 x10
9
gb15x10 g −10

2
=
2 or
−5
T = 1.27 x10
_______________________________________

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Solutions Manual Problem Solutions
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2.15
(a) Region I: Since VO > E , we can write
E
= − tan
LM 2mE
⋅a
OP
∂ ψ1
2
a
2 m VO − E fψ VO − E N =
2
Q
− =0 This last equation is valid only for specific
∂x
1
=
2 2
values of the total energy E. The energy levels
Region II: V = 0 , so are quantized.
∂ ψ2 _______________________________________
2
2 mE
ψ2 = 0
+
∂x =
2 2
2.16
Region III: V → ∞ ⇒ ψ 3 = 0 If a o were to increase, the bandgap energy
The general solutions can be written, keeping in would decrease and the material would begin to
mind that ψ 1 must remain finite for x < 0 , as behave less like a semiconductor and more like a
a f
ψ 1 = B1 exp + K1 x metal. If a o were to decrease, the bandgap

= A sina K x f + B cosa K x f
energy would increase and the material would
ψ2 2 2 2 2 begin to behave more like an insulator.
ψ3 = 0 _______________________________________
where

K1 =
a
2 m VO − E f and K2 =
2 mE
2.17
b4.73x10 g(100) −4 2

= = T = 100 K ; E g = 1170 − ⇒
2 2
.
(b) 636 + 100
Boundary conditions: E g = 1164
. eV
x = 0: ψ 1 = ψ 2 ⇒ B1 = B2
T = 200 K ⇒ E g = 1147
. eV
∂ψ 1 ∂ψ 2
= ⇒ K1 B1 = K 2 A2 T = 300 K ⇒ E g = 1125
. eV
∂x ∂x
x = a: ψ 2 = ψ 3 ⇒ T = 400 K ⇒ E g = 1.097 eV
A2 sin K2 a + B2 cos K2 a = 0 T = 500 K ⇒ E g = 1.066 eV
or
B2 = − A2 tan K2 a T = 600 K ⇒ E g = 1.032 eV
(c) _______________________________________
FK I
A = G JB
K1 B1 = K2 A2 ⇒
HK K
1
2 1 2.18
2 (a) E = hν
and since B1 = B2 , then Then

FK I
A = G JB ν=
E b
(1.42) 1.6 x10 −19 g⇒
2
HK K
1

2
2
h
=
b6.625x10 g −34

From B = − A tan K a , we can write ν = 3.43 x10 Hz

14

FK I
2 2 2

B = − G J B tan K a
(b)
HK K
1
8
2 2 2
c 3x10
λ=
−7
2 = = 8.75 x10 m
ν
14
which gives 3.43 x10
FK I
1 = − G J tan K a
or

HK K λ = 0.875 μm
1
2
2
_______________________________________
In turn, this equation can be written as

1= −
V −E L 2mE ⋅ aOP
tan M
N = Q
O
2
E
or

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2.19
b g b g F 2 I (kT )
4π 2m p
* 3/ 2

=
H 3K
3/ 2 3/ 2
4π 2mn
*
3
gc = 3
E − Ec h
h (a)
Then For Si:
b g z aE − E f
4π 2 mn
* 3/ 2
E c + kT
4π 2(0.56) 9.11x10 b
g F 2I −31 3/ 2

b6.625x10 g H 3K
gT =
1/ 2

3 c
dE gT = 3
h −34
Ec

× (0.0259)b1.6 x10 g
so 3/ 2

b g
−19
3/ 2

a f
E c + kT
4π 2 mn
*
2
gT = ⋅ ⋅ E − Ec
3/ 2
or
3
h 3 Ec g T = 7.92 x10 m = 7.92 x10 cm
24 −3 18 −3

(b)
4π 2mn b g * 3/ 2
2 For GaAs:
= ⋅ ⋅ ( kT )
b
g F 2I
3/ 2

4π 2(0.48) 9.11x10
−31 3/ 2
3

b6.625x10 g H 3K
h 3
gT =
(a) −34 3

For silicon:
b g × (0.0259)b1.6 x10 g
3/ 2
4π 2(1.08) 9.11x10
−31 3/ 2 −19

gT =
b6.625x10 g −34 3 or
g T = 6.29 x10 m = 6.29 x10 cm
24 −3 18 −3

× (0.0259)b1.6 x10 g
2 −19 3/ 2
_______________________________________
3
or 2.21

(b)
g T = 2.12 x10 cm
19 −3

(a) g C ( E ) =
4π 2 mn b g * 3/ 2

E − EC
3
h
b g b1.6x10 g
For GaAs:
b g 4π 2(1.08) 9.11x10
−31 3/ 2

4π 2(0.067) 9.11x10
−31 3/ 2
−19 1/ 2
= E − EC
gT =
b6.625x10 g −34 3
b6.625x10 −34
g3

× (0.0259)b1.6 x10 g
−3 −1
= 4.77 x10 E − EC
46
2 3/ 2 m J
−19

3 or
g C ( E ) = 7.63 x10
−3 −1
E − E C cm eV
21
or
−3
g T = 3.28 x10 cm
17
Then
_______________________________________ E gC

2.20 E C + 0.05 eV 1.71x10 cm eV

21 −3 −1

gV ( E ) =
4π 2 m pb g * 3/ 2

EV − E
E C + 0.10 eV
E C + 0.15 eV
2.41x10
21

21
3 2.96 x10
h
Now E C + 0.20 eV 3.41x10
21

gT =
b g
4π 2 m p
* 3/ 2

z
EV

EV − E ⋅ dE 4π 2 m p b g * 3/ 2

(b) gV ( E ) =
3
h EV − kT
3
EV − E

b g F −2 I a E − E f
4π 2m p
* 3/ 2
EV
h

=
H 3K
3/ 2

3 V
h EV − kT

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=
4π 2(0.56) 9.11x10b g b1.6x10 g
−31 3/ 2

−19 1/ 2
EV − E
2.24

b6.625x10 g
1
(a) f F (E ) =
LM a E f O
−34 3

+ kT − E C
= 1.78 x10
46
EV − E
−3
m J
−1
1 + exp
N
C

kT PQ
1
gV ( E ) = 2.85x10 f F ( E ) = 0.269
−3 −1
EV − E cm eV
21
or = ⇒
1 + exp(1)
E gV ( E )
(b)
EV − 0.05 eV 0.637 x10 cm eV
21 −3 −1
1
EV − 0.10 eV 0.901x10
21
1 − fF (E) = 1 −
LM a E f O
− kT − EV
PQ
1 + exp
N
V

EV − 0.15 eV 110
. x10
21
kT
EV − 0.20 eV 1.27 x10
21
1
= 1− ⇒ 1 − f F ( E ) = 0.269
1 + exp( −1)
_______________________________________
_______________________________________
2.22
gc bm g * 3/ 2
gc Fm I
=G J
*
3/ 2 2.25
1
= ⇒
Hm K
n

bm g
n

gv * 3/ 2
gv
* (a) fF =
FE−E I
1 + exp
H kT K
p p F

_______________________________________
1
2.23 = = 0.269
1 1 + exp(1)
f F (E ) =
FE−E I (b)
1 + exp
H kT K F

fF =
1
1 + exp(3)
= 0.0474

(c)
T(K) kT (eV )
1 −3
200 0.01727 fF = = 2.47 x10
300 0.0259 1 + exp(6)
400 0.03453 _______________________________________

a E − E f (eV )
F
a
f F for 200 K f 2.26
1
1− fF = 1−
FE−E I
−6
0.2 9.34 x10
0.1
0
3.05 x10
0.5
−3
1 + exp
H kT K F

or
−0.1 0.9970 1
−0.2 0.999991 1− fF =
F E − EI
a
f F for 300 K f a
f F for 400 K f
1 + exp
H kT K F

(a)
−4 −3
4.43 x10 3.04 x10 1
−2 −2 1− fF = = 0.269
2.06 x10 5.24 x10 1 + exp(1)
0.5 0.5 (b)
0.9794 0.9476 1
1− fF = = 0.0474
0.99956 0.9970 1 + exp(3)
_______________________________________

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(c) F − ΔE I
1− fF =
1
= 2.47 x10
−3 1 H kT K exp

1 + exp(6)
= 1−
F − ΔE I 1 + expF − ΔE I
=

_______________________________________
1 + exp
H kT K H kT K
or
2.27
(a) T = 300 K ⇒ kT = 0.0259 eV a f
1 − f 2 E2 =
F + ΔE I
1

f (E) =
1 LM −a E − E f OP H kT K
1 + exp
F E − E I N kT Q
≈ exp F
F
1 + exp
H K kT
F
Hence, we have that
f a E f = 1 − f a E f Q.E.D.
1 1 2 2

E fF Eb g _______________________________________

−5 2.29
EC 6.43x10 (a) From the text
E C + (1 2)kT 3.90 x10
−5
FE −E I
E C + kT 2.36 x10
−5 1 = 0.02 exp
H kT K 1 F

E C + (3 2)kT
−5
1.43 x10 or
E1 − E F = kT ln(50)
−5
E C + 2 kT 0.87 x10
which yields
(b) T = 400 K ⇒ kT = 0.03453 E1 − E F = 3.91kT
E f (E) (b)
1 −2
EC 7.17 x10
−4 fF = = 1.96 x10
1 + exp(3.91)
E C + (1 2)kT 4.35 x10
−4

−4
_______________________________________
E C + kT 2.64 x10
E C + (3 2)kT
−4
1.60 x10 2.30
E C + 2 kT 0.971x10
−4
(a) E F = 6.25 eV , T = 300 K , At E = 6.50 eV
1
f F (E ) =
F I
−5
= 6.43x10
_______________________________________ 6.50 − 6.25

2.28
1 + exp
H 0.0259 K
or
The probability of a state at E1 = E F + ΔE
f F ( E ) = 6.43 x10
−5

being occupied is

a f
f 1 E1 =
F
1
E − EF
=
I
1
ΔE F I
(b)
F 950I
H
1 + exp 1
kT K
1 + exp
kT H K T = 950 K ⇒ kT = (0.0259)
H 300K
or
The probability of a state at E 2 = E F − ΔE
kT = 0.0820 eV
being empty is
Then
a f
1 − f 2 E2 = 1 −
1
F I fF (E) =
1
1 + exp 2
E − EF
H K F 6.50 − 6.25I
kT 1 + exp
H 0.0820 K

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or 2.32
f F ( E ) = 0.0453 For E = E1 ,
1
fF (E) =
1 LM −a E − E f OP
F I FE −E I ≈ exp
N kT Q
1 F
(c) 1 − 0.01 = = 0.99
−0.30
1 + exp
H kT K 1 + exp
H kT K 1 F

Then Then
F −0.30I = 1 = 1.0101 f a E f = exp
F −0.30 I ⇒
H kT K 0.99
1 + exp F 1
H 0.0259 K
which can be written as a f
f F E1 = 9.32 x10
−6

F +0.30I = 1 = 99
exp
H kT K 0.0101 For E = E 2 , E F − E 2 = 112
. − 0.3 = 0.82 eV
1
1 − fF (E) = 1 −
Then
F −0.82 I
0.30
kT
= ln(99) ⇒ kT =
0.30
ln(99)
= 0.06529 H 0.0259 K
1 + exp

or
So
LM F −0.82 I OP
T = 756 K
F
N H 0.0259 K Q
1 − f ( E ) ≈ 1 − 1 − exp

F −0.82 I ⇒ 1 − f ( E ) = 1.78x10
H 0.0259 K
−14

2.31 = exp F
(a)
(b)
1
f (E) = For E F − E 2 = 0.4 ⇒ E1 − E F = 0.72 eV
F 7.15 − 7.0I = 0.00304
1 + exp
H 0.0259 K At E = E1 ,
LM −a E − E f OP = expF −0.72 I
f F ( E ) = exp
N kT Q H 0.0259 K
1 F
or
0.304%
(b) so
At T = 1000 K ⇒ kT = 0.08633 eV f F ( E ) = 8.45 x10
−13

Then
At E = E 2 ,
f (E) =
1
F = 0.1496
I LM −a E − E f OP = expF −0.4 I
7.15 − 7.0 1 − f F ( E ) = exp
N kT Q H 0.0259 K
F 2

1 + exp
H
0.08633 K so
or 14.96%
1 − f F ( E ) = 1.96 x10
−7

(c)
1 _______________________________________
f (E) =
F
6.85 − 7.0
= 0.997
I
1 + exp
H
0.0259 K 2.33
(a) At E = E1 ,
or
LM −a E − E f OP = expF −0.30 I
f F ( E ) = exp
N kT Q H 0.0259 K
F
99.7%
(d)
1 or
At E = E F , f ( E ) = for all temperatures. f F ( E ) = 9.32 x10
−6

2
At E = E 2 , then
E F − E 2 = 1.42 − 0.3 = 112
. eV ,
So

16
An Introduction to Semiconductor Devices Chapter 2
Solutions Manual Problem Solutions
______________________________________________________________________________________

LM −a E − E f OP = expF −112. I 2.35

1 − f F ( E ) = exp
N kT Q H 0.0259 K
F 2
1
f F (E ) =
FE−E I
or
1 − f F ( E ) = 1.66 x10
−19
1 + exp
H kT K F

1
F E + akT 2f − E I
(b) =
For E F − E 2 = 0.4 ⇒ E1 − E F = 1.02 eV ,
At E = E1 ,
1 + exp
H kT K c F

LM −a E − E f OP = expF −1.02 I or
f F ( E ) = exp
N kT Q H 0.0259 K
1 F
1
f F (E ) =
or FG b E 2g + akT 2fIJ
1 + exp
H kT K
g

f F ( E ) = 7.88 x10
−18

At E = E 2 , Then

LM −a E − E f OP = expF −0.4 I Eg
= 0.56 eV
N kT Q H 0.0259 K
(a) Si:
1 − f ( E ) = exp
F
F 2
2
f F ( E ) = 2.47 x10
−10
or
1 − f F ( E ) = 1.96 x10
−7
Eg
Ge: = 0.33 eV
_______________________________________ 2
f F ( E ) = 1.78 x10
−6

2.34
LM F E − E I OP −1 Eg
= 0.71 eV
N H kT K Q
f F ( E ) = 1 + exp F GaAs:
2
f F ( E ) = 7.54 x10
−13
so
df ( E ) LM F E − E I OP −2
(b)

N H kT K Q
= ( −1) 1 + exp
F F
Same values:
dE −10
1 − f F = 2.47 x10
F 1 I expF E − E I Si:
×
H kT K H kT K F
Ge: 1 − f F = 1.78 x10
−6

−13
or GaAs: 1 − f F = 7.54 x10
−1 FE−E I _______________________________________
df ( E )
F
=
kT
exp
H kT K F

LM1 + expF E − E I OP 2
2.36
dE
N H kT K Q
1
f F ( E ) = 10 =
F

F 0.55I
−6

(a) T = 0 , For
df F
1 + exp
H kT K
E < E F ⇒ exp( −∞ ) = 0 ⇒ =0 Then
dE F 0.55I = 1 = 10 ⇒
H kT K 10
+6
1 + exp
df F −6
E > E F ⇒ exp( +∞ ) = +∞ ⇒ =0
dE F 0.55I ≈ 10 ⇒ F 0.55I = lnb10 g
H kT K H kT K
+6 6
df F exp
At E = E F ⇒ → −∞
dE or
_______________________________________ 0.55
kT =
ln 10b g ⇒ T = 461K
6

_______________________________________

17
An Introduction to Semiconductor Devices Chapter 2
Solutions Manual Problem Solutions
______________________________________________________________________________________

2.37
a f
At E = E 2 , f F E 2 = 0.05
So
1
0.05 =
F E − EFI
H
1 + exp 2
kT K
Then
E2 − E F
= ln(19)
kT
a f
By symmetry, at E = E1 , 1 − f F E1 = 0.05 ,
So
E F − E1
= ln(19)
kT
Then
E 2 − E1
= 2 ln(19)
kT
(a)
At T = 300 K , kT = 0.0259 eV
E 2 − E1 = ΔE = (0.0259)(2) ln(19) ⇒
ΔE = 0.1525 eV
(b)
At T = 500 K , kT = 0.04317 eV
E 2 − E1 = ΔE = (0.04317)(2) ln(19) ⇒
ΔE = 0.254 eV
_______________________________________

18