Transistor

2SA1123
Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification

Unit: mm
Complementary to 2SC2631
5.0±0.2 4.0±0.2

■ Features

5.1±0.2
● Satisfactory foward current transfer ratio hFE collector current IC
characteristics.
● High collector to emitter voltage VCEO.

13.5±0.5
● Small collector output capacitance Cob.
● Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.

+0.2 +0.2
■ Absolute Maximum Ratings (Ta=25˚C) 0.45 –0.1 0.45 –0.1
1.27 1.27
Parameter Symbol Ratings Unit
Collector to base voltage VCBO –150 V

2.3±0.2
1 2 3
Collector to emitter voltage VCEO –150 V 1:Emitter
2:Collector
Emitter to base voltage VEBO –5 V 3:Base
2.54±0.15
Peak collector current ICP –100 mA JEDEC:TO–92
EIAJ:SC–43A
Collector current IC –50 mA
Collector power dissipation PC 750 mW
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –100V, IE = 0 –1 µA
Collector to emitter voltage VCEO IC = –0.1mA, IB = 0 –150 V
Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V
Forward current transfer ratio hFE * VCE = –5V, IC = –10mA 130 450
Collector to emitter saturation voltage VCE(sat) IC = –30mA, IB = –3mA –1 V
Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz 200 MHz
Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 5 pF
VCE = –10V, IC = –1mA, GV = 80dB
Noise voltage NV 150 300 mV
Rg = 100kΩ, Function = FLAT

*h Rank classification
FE

Rank R S T
hFE 130 ~ 220 185 ~ 330 260 ~ 450

1
Transistor 2SA1123

PC — Ta IC — VCE IC — VBE
1.0 –80 –120
VCE=–5V
Ta=25˚C
Collector power dissipation PC (W)

0.9
–70 25˚C
–100
0.8 Ta=75˚C –25˚C

Collector current IC (mA)

Collector current IC (mA)

IB=–500µA
–60
–450µA
0.7 –400µA
–350µA –80
–50 –300µA
0.6
–250µA
0.5 –40 –200µA –60

0.4 –150µA
–30
–40
0.3 –100µA
–20
0.2
–50µA –20
–10
0.1

0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — IE
–100 600 300
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=–5V VCB=–10V

Ta=25˚C
Forward current transfer ratio hFE

–30

Transition frequency fT (MHz)

500 250

–10

400 200
–3 Ta=75˚C

–1 300 150
25˚C

– 0.3 Ta=75˚C
25˚C 200 –25˚C 100

– 0.1
–25˚C
100 50
– 0.03

– 0.01 0 0
– 0.1 – 0.3 –1 –3 –10 –30 –100 – 0.1 – 0.3 –1 –3 –10 –30 –100 1 3 10 30 100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob — VCB
6
IE=0
Collector output capacitance Cob (pF)

f=1MHz
Ta=25˚C
5

0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)