Power Transistors
2SB945
Silicon PNP epitaxial planar type
For power switching
Unit: mm
Complementary to 2SD1270
10.0±0.2 4.2±0.2
0.7±0.1
5.5±0.2 2.7±0.2
■ Features
4.2±0.2
7.5±0.2
● Low collector to emitter saturation voltage VCE(sat)
φ3.1±0.1
16.7±0.3
● Satisfactory linearity of foward current transfer ratio hFE
● Large collector current IC
● Full-pack package which can be installed to the heat sink with
one screw 1.3±0.2
4.0
1.4±0.1
14.0±0.5
■ Absolute Maximum Ratings
Solder Dip
(TC=25˚C) 0.5 +0.2
–0.1
0.8±0.1
Parameter Symbol Ratings Unit
Collector to base voltage VCBO –130 V 2.54±0.25
Collector to emitter voltage VCEO –80 V 5.08±0.5
1 2 3
Emitter to base voltage VEBO –7 V
1:Base
Peak collector current ICP –10 A 2:Collector
Collector current IC –5 A 3:Emitter
TO–220 Full Pack Package(a)
Collector power TC=25°C 40
PC W
dissipation Ta=25°C 2
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C
■ Electrical Characteristics (TC=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –100V, IE = 0 –10 µA
Emitter cutoff current IEBO VEB = –5V, IC = 0 –50 µA
Collector to emitter voltage VCEO IC = –10mA, IB = 0 –80 V
hFE1 VCE = –2V, IC = – 0.1A 45
Forward current transfer ratio
hFE2* VCE = –2V, IC = –2A 90 260
Collector to emitter saturation voltage VCE(sat) IC = –4A, IB = – 0.2A – 0.5 V
Base to emitter saturation voltage VBE(sat) IC = –4A, IB = – 0.2A –1.5 V
Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz 30 MHz
Turn-on time ton 0.13 µs
Storage time tstg IC = –2A, IB1 = – 0.2A, IB2 = 0.2A 0.5 µs
Fall time tf 0.13 µs
*h Rank classification
FE2
Rank Q P
hFE2 90 to 180 130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
1
Power Transistors 2SB945
PC — Ta IC — VCE VCE(sat) — IC
50 –8 –100
Collector to emitter saturation voltage VCE(sat) (V)
(1) TC=Ta IC/IB=20
TC=25˚C
(2) With a 100 × 100 × 2mm IB=–120mA
Collector power dissipation PC (W)
–7 –30
Al heat sink
40 (3) With a 50 × 50 × 2mm –100mA
Collector current IC (A)
Al heat sink –6 –80mA –10
(4) Without heat sink
(PC=2W)
–5 –60mA –3
30
–4 –40mA –1
(1)
–30mA
20
–3 – 0.3
25˚C
–20mA
TC=100˚C
–2 – 0.1
10 –10mA
(2) –25˚C
(3) –1 – 0.03
(4) –3mA
0 0 – 0.01
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)
VBE(sat) — IC hFE — IC fT — IC
–100 10000 10000
IC/IB=20 VCE=–2V VCE=–10V
Base to emitter saturation voltage VBE(sat) (V)
f=10MHz
Forward current transfer ratio hFE
–30 3000 3000 TC=25˚C
Transition frequency fT (MHz)
–10 1000 1000
25˚C
–3 300 TC=100˚C 300
25˚C
TC=–25˚C
–1 100 100
–25˚C
100˚C
– 0.3 30 30
– 0.1 10 10
– 0.03 3 3
– 0.01 1 1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A) Collector current IC (A) Collector current IC (A)
Cob — VCB ton, tstg, tf — IC Area of safe operation (ASO)
10000 100 –100
IE=0 Pulsed tw=1ms Non repetitive pulse
Collector output capacitance Cob (pF)
f=1MHz Duty cycle=1% TC=25˚C
3000 TC=25˚C 30 IC/IB=10 –30
Switching time ton,tstg,tf (µs)
(–IB1=IB2)
ICP
Collector current IC (A)
1000 10 VCC=–50V –10
TC=25˚C IC
t=0.5ms
300 3 –3 10ms
1ms
100 1 –1
tstg
30 0.3 – 0.3 DC
ton
10 0.1 tf – 0.1
3 0.03 – 0.03
1 0.01 – 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100 0 – 0.8 –1.6 –2.4 –3.2 –1 –3 –10 –30 –100 –300 –1000
Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V)
2
Power Transistors 2SB945
Rth(t) — t
103
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)
102 (1)
(2)
10
10–1
10–2
10–4 10–3 10–2 10–1 1 10 102 103 104
Time t (s)
