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PZT13003 NPN Transistor Datasheet

This document provides specifications for the PZT13003 NPN silicon medium power transistor. It is a RoHS compliant transistor intended for applications such as AF driver and output stages and power switching. The transistor comes in different product ranks with hFE ranges of 8-20, 15-30, and 25-40. It has maximum ratings of 1.5A collector current, 700V collector-base voltage, and 450V collector-emitter voltage. Electrical characteristics including DC current gain, saturation voltage, storage time, and transition frequency are provided.

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72 views2 pages

PZT13003 NPN Transistor Datasheet

This document provides specifications for the PZT13003 NPN silicon medium power transistor. It is a RoHS compliant transistor intended for applications such as AF driver and output stages and power switching. The transistor comes in different product ranks with hFE ranges of 8-20, 15-30, and 25-40. It has maximum ratings of 1.5A collector current, 700V collector-base voltage, and 450V collector-emitter voltage. Electrical characteristics including DC current gain, saturation voltage, storage time, and transition frequency are provided.

Uploaded by

Stuxnet
Copyright
© Public Domain
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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PZT13003

1.5A , 700V
Elektronische Bauelemente NPN Silicon Medium Power Transistor

RoHS Compliant Product


A suffix of “-C” specifies halogen & lead-free

FEATURES SOT-223
 For AF driver and output stages
 Power switching applications A
M
CLASSIFICATION OF hFE 4

Top View CB
Product-Rank PZT13003-A PZT13003-B PZT13003-C 1
2

Range 8~20 15~30 25~40 K L 3

PACKAGE INFORMATION D
F G H J
Package MPQ Leader Size
Millimeter Millimeter
SOT-223 2.5K 13 inch REF.
Min. Max.
REF.
Min. Max.
A 6.20 6.70 G - 0.10
B 6.70 7.30 H - -
C 3.30 3.70 J 0.25 0.35
D 1.42 1.90 K - -
E 4.50 4.70 L 2.30 REF.
F 0.60 0.82 M 2.90 3.10

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)


Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO 700 V
Collector-Emitter Voltage VCEO 450 V
Emitter-Base Voltage VEBO 9 V
Collector Current -Continuous IC 1.5 A
Collector Power Dissipation PD 1.25 W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)


Parameter Symbol Min. Max. Unit Test Conditions
Collector-base breakdown voltage V(BR)CBO 700 V IC=1mA , IE=0
Collector-emitter breakdown voltage V(BR)CEO 450 V IC=10mA, IB=0
Emitter-base breakdown voltage V(BR)EBO 9 V IE=1mA, IC=0
Collector cut-off current ICBO 0.1 mA VCB=700V, IE=0
Emitter-Base Cutoff Current IEBO 0.05 mA VEB=9V, IC=0
DC current gain hFE 8 40 VCE=10V, IC=0.5A
Collector-emitter saturation voltage1 VCE(sat) 1 V IC=1A, IB=250mA
Base-emitter voltage VBE(on) 1.2 V IC=1A, IB=250mA
ON-Time T(on) 1 μS
VCE=10V, IC=2A
Storage time tS 4 μS
IB1=IB2=400mA
Fall time tf 0.7 μS
Transition frequency fT 4 MHz VCE=10V, IC=500mA, f=1.0MHZ

[Link] Any changes of specification will not be informed individually.

19-Jan-2012 Rev. A Page 1 of 2


PZT13003
1.5A , 700V
Elektronische Bauelemente NPN Silicon Medium Power Transistor

CHARACTERISTIC CURVES

[Link] Any changes of specification will not be informed individually.

19-Jan-2012 Rev. A Page 2 of 2

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