Scribd
Upload
164 views2 pages

ZTX450/ZTX451 Transistor Specifications

The document describes two NPN silicon planar medium power transistors, the ZTX450 and ZTX451. The key specifications include a 60V VCEO rating, 1A continuous collector current rating, and 1W power dissipation. Typical characteristics graphs show switching times, gain, saturation voltages, and safe operating area as functions of collector current. Electrical characteristics are provided such as breakdown voltages, cut-off currents, saturation voltages, gain, and transition frequency.

Uploaded by

giapy0000
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
164 views2 pages

ZTX450/ZTX451 Transistor Specifications

The document describes two NPN silicon planar medium power transistors, the ZTX450 and ZTX451. The key specifications include a 60V VCEO rating, 1A continuous collector current rating, and 1W power dissipation. Typical characteristics graphs show switching times, gain, saturation voltages, and safe operating area as functions of collector current. Electrical characteristics are provided such as breakdown voltages, cut-off currents, saturation voltages, gain, and transition frequency.

Uploaded by

giapy0000
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

ZTX450

ZTX451

NPN SILICON PLANAR


MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt

TYPICAL CHARACTERISTICS

0.3

Switching time

VCE(sat) - (Volts)

IB1=IB2=IC/10
VCE=-10V

td,tr,tf
ns

0.4

IC/IB=10
0.2
ZTX451

0.1

800

120

700

100

60

0.001

0.01

0.1

300

20

200

100

IC - Collector Current (Amps)

0.1

ABSOLUTE MAXIMUM RATINGS.

IC - Collector Current (Amps)

VCE(sat) v IC

Typical Switching Speeds

1.0
IC/IB=10

0.9

VBE(sat) - (Volts)

hFE - Normalised Gain (%)

100

60
40

20

0.8

0.01

0.1

0.6

VBE(sat) v IC
Single Pulse Test at Tamb=25C

10

IC - Collector Current (Amps)

0.6
0.001

0.01

0.1

VBE - (Volts)

0.1

D.C.
1s
100ms
10ms
1.0ms
300s
100s
ZTX450

10

ZTX451

0.01
0.1

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-176

0.1

0.01

0.001

hFE v IC

0.8

ZTX451

UNIT

60

80

Collector-Emitter Voltage

VCEO

45

60

Emitter-Base Voltage

VEBO

Peak Pulse Current

I CM

Continuous Collector Current

IC

Power Dissipation at Tamb=25C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

PARAMETER

SYMBOL

ZTX450

UNIT

CONDITIONS.

Collector-Base
Breakdown Voltage

V(BR)CBO

60

80

IC=100 A

Collector-Emitter
Sustaining Voltage

VCEO(sus)

45

60

IC=10mA*

Emitter-Base
Breakdown Voltage

V(BR)EBO

IE=100 A

Collector Cut-Off
Current

ICBO

0.1

0.1

A
A

VCB=45V
VCB=60V

Emitter Cut-Off
Current

IEBO

0.1

0.1

VEB=4V

Collector-Emitter
Saturation Voltage

VCE(sat)

0.25

0.35

IC=150mA, IB=15mA*

Base-Emitter
Saturation Voltage

VBE(sat)

1.1

1.1

IC=150mA, IB=15mA*

Static Forward
Current Transfer
Ratio

hFE

100
15

Transition
Frequency

fT

150

Output Capacitance

Cobo

MIN.

IC - Collector Current (Amps)

1.0

ZTX450

VCBO

0.4

IC - Collector Current (Amps)

1.2

SYMBOL

Collector-Base Voltage

0.5

10

1.4

PARAMETER

ELECTRICAL CHARACTERISTICS (at Tamb = 25C).

0.7

0.3
0.001

E-Line
TO92 Compatible

400

tf
tr

0.01

80

500
td

40

C
B

600

ts

80

ZTX450

ts
nS

140

ZTX450
ZTX451

100

ZTX451

MAX. MIN.

300

50
10

MAX.

150

150
15
3-175

15

IC=150mA, VCE=10V*
IC=1A, VCE=10V*
MHz

IC=50mA, VCE=10V
f=100MHz

pF

VCB=10V, f=1MHz

ZTX450
ZTX451

NPN SILICON PLANAR


MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt

TYPICAL CHARACTERISTICS

0.3

Switching time

VCE(sat) - (Volts)

IB1=IB2=IC/10
VCE=-10V

td,tr,tf
ns

0.4

IC/IB=10
0.2
ZTX451

0.1

800

120

700

100

60

0.001

0.01

0.1

300

20

200

100

IC - Collector Current (Amps)

0.1

ABSOLUTE MAXIMUM RATINGS.

IC - Collector Current (Amps)

VCE(sat) v IC

Typical Switching Speeds

1.0
IC/IB=10

0.9

VBE(sat) - (Volts)

hFE - Normalised Gain (%)

100

60
40

20

0.8

0.01

0.1

0.6

VBE(sat) v IC
Single Pulse Test at Tamb=25C

10

IC - Collector Current (Amps)

0.6
0.001

0.01

0.1

VBE - (Volts)

0.1

D.C.
1s
100ms
10ms
1.0ms
300s
100s
ZTX450

10

ZTX451

0.01
0.1

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-176

0.1

0.01

0.001

hFE v IC

0.8

ZTX451

UNIT

60

80

Collector-Emitter Voltage

VCEO

45

60

Emitter-Base Voltage

VEBO

Peak Pulse Current

I CM

Continuous Collector Current

IC

Power Dissipation at Tamb=25C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

PARAMETER

SYMBOL

ZTX450

UNIT

CONDITIONS.

Collector-Base
Breakdown Voltage

V(BR)CBO

60

80

IC=100 A

Collector-Emitter
Sustaining Voltage

VCEO(sus)

45

60

IC=10mA*

Emitter-Base
Breakdown Voltage

V(BR)EBO

IE=100 A

Collector Cut-Off
Current

ICBO

0.1

0.1

A
A

VCB=45V
VCB=60V

Emitter Cut-Off
Current

IEBO

0.1

0.1

VEB=4V

Collector-Emitter
Saturation Voltage

VCE(sat)

0.25

0.35

IC=150mA, IB=15mA*

Base-Emitter
Saturation Voltage

VBE(sat)

1.1

1.1

IC=150mA, IB=15mA*

Static Forward
Current Transfer
Ratio

hFE

100
15

Transition
Frequency

fT

150

Output Capacitance

Cobo

MIN.

IC - Collector Current (Amps)

1.0

ZTX450

VCBO

0.4

IC - Collector Current (Amps)

1.2

SYMBOL

Collector-Base Voltage

0.5

10

1.4

PARAMETER

ELECTRICAL CHARACTERISTICS (at Tamb = 25C).

0.7

0.3
0.001

E-Line
TO92 Compatible

400

tf
tr

0.01

80

500
td

40

C
B

600

ts

80

ZTX450

ts
nS

140

ZTX450
ZTX451

100

ZTX451

MAX. MIN.

300

50
10

MAX.

150

150
15
3-175

15

IC=150mA, VCE=10V*
IC=1A, VCE=10V*
MHz

IC=50mA, VCE=10V
f=100MHz

pF

VCB=10V, f=1MHz

You might also like