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ZTX705 PNP Darlington Transistor Specs

This document summarizes the electrical characteristics and specifications of two ZTX series transistors: the ZTX704 and ZTX705. Both are silicon planar medium power Darlington transistors that can withstand continuous currents up to 1 amp and collector-emitter voltages up to 120 volts. Key specifications listed include current gain of 3,000 typical, transition frequency of 160 MHz, input and output capacitances, switching times of 0.6-0.8 microseconds, and maximum power dissipation of 1 watt with derating above 25 degrees Celsius. Absolute maximum ratings and operating temperature range of -55 to 200 degrees Celsius are also provided.

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halil ibrahim soysal
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66 views3 pages

ZTX705 PNP Darlington Transistor Specs

This document summarizes the electrical characteristics and specifications of two ZTX series transistors: the ZTX704 and ZTX705. Both are silicon planar medium power Darlington transistors that can withstand continuous currents up to 1 amp and collector-emitter voltages up to 120 volts. Key specifications listed include current gain of 3,000 typical, transition frequency of 160 MHz, input and output capacitances, switching times of 0.6-0.8 microseconds, and maximum power dissipation of 1 watt with derating above 25 degrees Celsius. Absolute maximum ratings and operating temperature range of -55 to 200 degrees Celsius are also provided.

Uploaded by

halil ibrahim soysal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.

ZTX704 PNP SILICON PLANAR MEDIUM POWER ZTX704

ZTX705 DARLINGTON TRANSISTORS ZTX705


ISSUE 3 – MAY 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FEATURES
PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS. * 120 Volt VCEO
MIN. MAX. MIN. MAX. * 1 Amp continuous current
Static Forward hFE 3K 3K IC=-10mA, VCE=-5V* * Gain of 3K at IC=1 Amp
Current Transfer 3K 3K IC=-100mA, VCE=-5V* * Ptot=1 Watt
Ratio 3K 30K 3K 30K IC=-1A, VCE=-5V* APPLICATIONS C
2K 2K IC=-2A, VCE=-5V* B
* Lamp, solenoid and relay drivers E
Transition fT 160 Typical 160 Typical MHz IC=-100mA, VCE=-10V E-Line
Frequency f=20MHz
ABSOLUTE MAXIMUM RATINGS. TO92 Compatible
Input Capacitance Cibo 90 Typical 90 Typical pF VEB=-0.5V, f=1MHz
Output Capacitance Cobo 15 Typical 15 Typical pF VCE=-10V, f=1MHz PARAMETER SYMBOL ZTX704 ZTX705 UNIT

Switching Times ton 0.6 Typical 0.6 Typical µs IC=-0.5A, VCE=-10V Collector-Base Voltage VCBO -120 -140 V
IB1=IB2=-0.5mA Collector-Emitter Voltage VCEO -100 -120 V
toff 0.8 Typical 0.8 Typical µs
Emitter-Base Voltage VEBO -10 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Peak Pulse Current ICM -4 A
Continuous Collector Current IC -1 A
1.0 Power Dissipation at Tamb = 25°C Ptot 1 W
Maximum Power Dissipation (W)

RS = 100KΩ RS = 22KΩ derate above 25°C 5.7 mW/ °C


RS = 1MΩ
0.8 RS = ∞ Operating and Storage Temperature Tj:Tstg -55 to +200 °C
Range

0.6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).


DC Conditions PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS.
0.4
MIN. MAX. MIN. MAX.
0.2 Collector-Base V(BR)CBO -120 -140 V IC=-100µ A
Breakdown Voltage

0 Collector-Emitter VCEO(SUS) -100 -120 V IC=-10mA*


1 10 100
Breakdown Voltage
Emitter-Base V(BR)EBO -10 -10 V IE=-100µ A
VCE - Collector-Emitter Voltage (Volts) Breakdown Voltage
Collector Cut-Off ICBO -0.1 µA VCB=-100V
Voltage Derating Graph Current -0.1 µA VCB=-120V
-10 µA VCB=-100V, Tamb=100°C
-10 µA VCB=-120V, Tamb=100°C

The maximum permissible operational temperature can be obtained from this graph using Collector Cut-Off ICES -10 -10 µA VCES=-80V
the following equation Current
Power(max ) − Power(act) Emitter Cut-Off IEBO -0.1 -0.1 µA VEB=-8V
T amb (max ) = +25° C
0.0057 Current
Tamb(max)= Maximum operating ambient temperature Collector-Emitter VCE(sat) -1.3 -1.3 V IC=-1A, IB=-1mA*
Power(max) = Maximum power dissipation figure, obtained from the above graph for a Saturation Voltage -2.5 -2.5 V IC=-2A, IB=-2mA*
given VCE and source resistance (RS) Base-Emitter VBE(sat) -1.8 -1.8 V IC=-1A, IB=-10mA*
Power(actual)= Actual power dissipation in users circuit Saturation Voltage
Base-Emitter VBE(on) -1.7 -1.7 V IC=-1A, VCE=-5V*
Turn-On Voltage

3-251 3-250
This datasheet has been downloaded from [Link] at this page
ZTX704 PNP SILICON PLANAR MEDIUM POWER ZTX704
ZTX705 DARLINGTON TRANSISTORS ZTX705
ISSUE 3 – MAY 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FEATURES
PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS. * 120 Volt VCEO
MIN. MAX. MIN. MAX. * 1 Amp continuous current
Static Forward hFE 3K 3K IC=-10mA, VCE=-5V* * Gain of 3K at IC=1 Amp
Current Transfer 3K 3K IC=-100mA, VCE=-5V* * Ptot=1 Watt
Ratio 3K 30K 3K 30K IC=-1A, VCE=-5V* APPLICATIONS C
2K 2K IC=-2A, VCE=-5V* B
* Lamp, solenoid and relay drivers E
Transition fT 160 Typical 160 Typical MHz IC=-100mA, VCE=-10V E-Line
Frequency f=20MHz
ABSOLUTE MAXIMUM RATINGS. TO92 Compatible
Input Capacitance Cibo 90 Typical 90 Typical pF VEB=-0.5V, f=1MHz
Output Capacitance Cobo 15 Typical 15 Typical pF VCE=-10V, f=1MHz PARAMETER SYMBOL ZTX704 ZTX705 UNIT

Switching Times ton 0.6 Typical 0.6 Typical µs IC=-0.5A, VCE=-10V Collector-Base Voltage VCBO -120 -140 V
IB1=IB2=-0.5mA Collector-Emitter Voltage VCEO -100 -120 V
toff 0.8 Typical 0.8 Typical µs
Emitter-Base Voltage VEBO -10 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Peak Pulse Current ICM -4 A
Continuous Collector Current IC -1 A
1.0 Power Dissipation at Tamb = 25°C Ptot 1 W
Maximum Power Dissipation (W)

RS = 100KΩ RS = 22KΩ derate above 25°C 5.7 mW/ °C


RS = 1MΩ
0.8 RS = ∞ Operating and Storage Temperature Tj:Tstg -55 to +200 °C
Range

0.6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).


DC Conditions PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS.
0.4
MIN. MAX. MIN. MAX.
0.2 Collector-Base V(BR)CBO -120 -140 V IC=-100µ A
Breakdown Voltage

0 Collector-Emitter VCEO(SUS) -100 -120 V IC=-10mA*


1 10 100
Breakdown Voltage
Emitter-Base V(BR)EBO -10 -10 V IE=-100µ A
VCE - Collector-Emitter Voltage (Volts) Breakdown Voltage
Collector Cut-Off ICBO -0.1 µA VCB=-100V
Voltage Derating Graph Current -0.1 µA VCB=-120V
-10 µA VCB=-100V, Tamb=100°C
-10 µA VCB=-120V, Tamb=100°C

The maximum permissible operational temperature can be obtained from this graph using Collector Cut-Off ICES -10 -10 µA VCES=-80V
the following equation Current
Power(max ) − Power(act) Emitter Cut-Off IEBO -0.1 -0.1 µA VEB=-8V
T amb (max ) = +25° C
0.0057 Current
Tamb(max)= Maximum operating ambient temperature Collector-Emitter VCE(sat) -1.3 -1.3 V IC=-1A, IB=-1mA*
Power(max) = Maximum power dissipation figure, obtained from the above graph for a Saturation Voltage -2.5 -2.5 V IC=-2A, IB=-2mA*
given VCE and source resistance (RS) Base-Emitter VBE(sat) -1.8 -1.8 V IC=-1A, IB=-10mA*
Power(actual)= Actual power dissipation in users circuit Saturation Voltage
Base-Emitter VBE(on) -1.7 -1.7 V IC=-1A, VCE=-5V*
Turn-On Voltage

3-251 3-250
ZTX704
ZTX705
TYPICAL CHARACTERISTICS

-55°C IC/IB=1000 +100°C


+25°C VCE=-5V
1.8 +100°C
16k +25°C
+175°C -55°C
1.6 14k
VCE(sat) - (Volts)

1.4 12k

hFE - Gain
1.2 10k
1.0 8k
0.8 6k
0.6 4k
0.4 2k
0.2 0
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20

IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC hFE v IC

-55°C 2.4 -55°C


+25°C IC/IB=1000 +25°C
VCE=-5V
1.8 +100°C 2.2 +100°C
+175°C
1.6 2.0
VBE(sat) - (Volts)

VBE - (Volts)

1.4 1.8
1.2 1.6
1.0 1.4
0.8 1.2
0.6 1.0
0.4 0.8
0.2 0.6
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
IC - Collector Current (Amps)

D.C.
1s
100ms
10ms
0.1 1.0ms
0.1ms

ZTX704
ZTX705

1 10 100 1000
VCE - Collector Voltage (Volts)

Safe Operating Area

3-252

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