MP2480: 3A LED Driver Overview
MP2480: 3A LED Driver Overview
DESCRIPTION FEATURES
The MP2480 is step-down switching regulator • Wide 5V to 36V Operating Input Range
that delivers a constant current of up to 3A to • Up to 95% Efficiency
high-power LEDs. It integrates a high-side, • Hysteretic Control with No Compensation
high-voltage power MOSFET with a current limit • No Output Capacitor Required
of 4.3A. The wide 5V to 36V input range • ±3% LED Current Accuracy
accommodates a variety of step-down • Up to 2MHz Switching Frequency
applications, making it ideal for general lighting • Up to 20kHz Dimming Frequency
and LCD backlighting applications. Hysteretic
• 200mV Reference Voltage
current-mode control helps provide for a very
• Short-Circuit Protection with Integrated
fast response, which makes the 20kHz dimming
High-Side MOSFET
frequency possible. MPS’s proprietary feedback
control minimizes the number of external • Thermal Shut Down
components while delivering an LED current • Available in SOIC8-EP
with a typical accuracy of ±3%. APPLICATIONS
The switching frequency goes up to 2MHz, thus • High Power LED Driver
permitting smaller components. Thermal shut • General Lighting and LCD Backlighting
down, and short circuit protection provide • Constant Current Source
reliable fault-tolerant operation. A 160µA
All MPS parts are lead-free and adhere to the RoHS directive. For MPS green
quiescent current allows for use in battery- status, please visit MPS website under Quality Assurance. “MPS” and “The
powered applications. Future of Analog IC Technology” are Registered Trademarks of Monolithic
Power Systems, Inc.
The MP2480 is available in SOIC8-EP with an
exposed pad on the bottom.
TYPICAL APPLICATION
ORDERING INFORMATION
Part Number Package Top Marking Free Air Temperature (TA)
MP2480DN* SOIC8-EP MP2480 -40°C to +85°C
PACKAGE REFERENCE
TOP VIEW
SW 1 8 BST
DIM 2 7 VIN
EN 3 6 NC
GND 4 5 FB
EXPOSED PAD
ON BOTTOM
CONNECT TO GND
SOIC8-EP
(4)
ABSOLUTE MAXIMUM RATINGS (1) Thermal Resistance θJA θJC
Supply Voltage (VIN)......................-0.3V to +40V SOIC8-EP ...............................50 ...... 10 ... °C/W
Switch Voltage (VSW).......... -0.5V to (VIN + 0.5V) Notes:
BST to SW ......................................-0.3V to +6V 1) Exceeding these ratings may damage the device.
All Other Pins ..................................-0.3V to +6V 2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ(MAX), the junction-to-
Junction Temperature ...............................150°C ambient thermal resistance θJA, and the ambient temperature
Continuous Power Dissipation (TA = 25°C) (2) TA. The maximum allowable continuous power dissipation at
SOIC8-EP ................................................. 2.5W any ambient temperature is calculated by PD(MAX)=(TJ(MAX)-
TA)/θJA. Exceeding the maximum allowable power dissipation
Lead Temperature ....................................260°C will cause excessive die temperature, and the regulator will go
Storage Temperature............... -65°C to +150°C into thermal shutdown. Internal thermal shutdown circuitry
protects the device from permanent damage.
(3) 3) The device is not guaranteed to function outside of its
Recommended Operating Conditions operating conditions.
Supply Voltage VIN ..............................5V to 36V 4) Measured on JESD51-7 4-layer board.
EN and DIM Voltages ...........................0V to 5V
Maximum Junction Temp. (TJ) ..................125°C
ELECTRICAL CHARACTERISTICS
VIN = 24V, TA= 25°C, unless otherwise noted.
Specifications over temperature are guaranteed by design and characterization.
Parameter Symbol Condition Min Typ Max Units
VIN UVLO threshold 3.6 4.0 4.4 V
VIN UVLO hysteresis 0.4 V
Shutdown supply current VEN = 0V 2 5 µA
Quiescent supply current No load, VFB = 250mV 160 220 µA
Upper switch on resistance (5) RDS(ON) VBST – VSW = 5V 150 mΩ
Upper switch leakage current ISWLK VEN = 0V, VSW = 0V 0.01 1 µA
Current limit IPK VFB = 0.15V 3.5 4.3 A
EN up threshold VENH 1.4 1.55 1.7 V
EN threshold hysteresis VENHY 320 mV
EN input current IENI VEN =5V 0.01 1 µA
EN sinking current IENS VEN =2V 2 3 µA
DIM up threshold VDIMH 0.8 1.15 1.5 V
DIM threshold hysteresis VDIMHY 300 mV
VDIM =5V -1 1 µA
DIM input current IDIM
VDIM =0V -5 -1 µA
5V < VIN < 36V, VFB rising from
Feedback voltage threshold high (5) VFBH 220 225 230 mV
0V until VSW < 30V
5V < VIN < 36V, VFB falling
Feedback voltage threshold low (5) VFBL 170 175 180 mV
from 0.25V until VSW > 30V
FB pin input current IFB VFB=5V or 0V -100 100 nA
(5)
Max duty cycle DMAX 98 %
(5)
Thermal shutdown Hysteresis = 20°C 150 °C
Note:
5) Guaranteed by design.
PIN FUNCTIONS
SOIC8-EP
Name Description
Pin #
Switch Node. Output from the high-side switch. Requires a low-VF Schottky rectifier.
1 SW
Place the rectifier close to the SW pins to reduce switching spikes.
PWM Dimming Input. Pull this pin below the specified threshold to turn dimming off. Pull
2 DIM this pin above the specified threshold to turn dimming on. If there is no need for
dimming, connect DIM and EN pins together.
Enable Input. Pull this pin below the specified threshold to shutdown the chip. Pull this
3 EN
pin up above the specified threshold or leave it floating to enable the chip.
GND,
Ground. Connect as close as possible to the output capacitor. Avoid the high-current
4 Exposed
switching paths. Connect exposed pad to GND plane for optimal thermal performance.
pad
Feedback. Input to hysteretic comparators. Connect an external current sensing resistor
5 FB in series with the LEDs to GND. Connects with the feedback voltage; regulated at
+200mV with 25% ripple.
6 NC Not connected
Input Supply. Supplies power to all the internal control circuitry, including both bootstrap
7 VIN regulators and the high-side switch. Place a decoupling capacitor to ground close to this
pin to minimize switching spikes.
Bootstrap. Positive power supply for the internal floating high-side MOSFET driver.
8 BST
Connect a bypass capacitor between this pin and SW pin.
BLOCK DIAGRAM
IENS VIN
Reference Internal
EN UVLO Regulators BST
Control
Logic IPK
DIM and
Protection
Circuits SW
VFBH
R
Q
FB S GND
VFBL
Adaptive Threshold VFBH
200mV Adjustment Circuit VFBL
TYPICAL CHARACTERISTICS
RDS_ON vs. Current Limit vs.
Temperature Temperature
250 5
4.5
200 4
3.5
150 3
2.5
100 2
1.5
50 1
0.5
0 0
-50 -30 -10 10 30 50 70 90 110 130 -50-30 -10 10 30 50 70 90 110130
170
165 204
160
155 200
150
145 196
140
135 192
-50 -30 -10 10 30 50 70 90 110 130 -50 -30 -10 10 30 50 70 90 110 130
EFFICIENCY (%)
1.2 92
1 90
0.8 2kHz 88
200Hz
0.6 86
0.4 84
0.2 82
0 8
0 0.2 0.4 0.6 0.8 1 1 2 3 4 5 6 7 8 9
VEN VIN
2V/div. 20V/div.
VLED
VLED 20V/div.
20V/div.
OPERATION
Hysteresis Current Control with Adaptive Under-Voltage Lockout (UVLO)
Threshold Adjustment
Under-voltage lockout (UVLO) protects the chip
MP2480 operates in a hysteretic current-control from operating at insufficient supply voltage.
mode to accurately regulate the LED current. The UVLO rising threshold is about 4.0V while
The sensing resistor (RFB) connects to the FB its falling threshold is a consistent 3.6V.
pin to sense the LED current. The power
Thermal Shutdown
MOSFET turns on and remains on until the
Thermal shutdown prevents the chip from
voltage on the FB pin rises to the upper
operating at exceedingly high temperatures.
threshold of 225mV. The power MOSFET then
When the silicon die temperature rises above
turns off and remains off until FB pin falls to the
its upper threshold, the chip shuts down. When
lower threshold of 175mV. The two thresholds
the temperature falls below its lower threshold,
are adaptive and adjust to compensate for
the chip is enabled again.
circuit delay. This regulates the LED current
very accurately with an average of 200mV at LED Short Protection
the FB pin. The LED current is within its limits and well-
regulates while FB pin voltage is 200mV, as
Enable Control
long as RFB has not failed.
The MP2480 has a dedicated enable-control
pin (EN) with positive logic. Its falling threshold If the LED sensing resistor has failed or the
is 1.23V, and its rising threshold is 1.55V output has shorted to GND, the voltage of FB
(320mV higher). pin falls. VIN charges the inductor. When the
inductor current reaches the current limit value,
When floating, EN pulls up to about 3.0V by an
the power MOSFET turns off. MP2480 will retry
internal 1µA current source so it is enabled.
the operation after about 300µs delay.
Pulling down a floating EN requires a current
capability of 1µA..
Floating Driver and Bootstrap Charging
The floating power MOSFET driver is powered
by an external bootstrap capacitor. This floating
driver has its own UVLO protection, with a
rising threshold of 2.2V and a falling threshold
of 150mV.
The dedicated internal bootstrap regulator
charges and regulates the bootstrap capacitor
to around 5V.
In case the internal circuit does not have
sufficient voltage and the bootstrap capacitor
has insufficient charge, extra external circuitry
can ensure that the bootstrap voltage is in the
normal operational region. Refer to External
Bootstrap Diode in the Application section.
APPLICATION INFORMATION
COMPONENT SELECTION Input Capacitor CIN
Setting the LED Current The input current to the step-down converter is
discontinuous, and therefore requires a
RFB is connected in series to the LEDs and sets capacitor to supply the AC current to the step-
the LED current, ILED. The FB pin connects to down converter and maintain the DC input
the voltage on the sensing resistor RFB, where.
voltage. Use low-ESR capacitors for best
VFB performance, especially for high-switching–
ILED =
RFB frequency applications.
For example, for ILED = 700mA, RFB = 286mΩ. The RMS current through the input capacitor is
about:
Inductor Selection and Frequency Setting
VOUT
The inductor L supplies a constant current to ID = ILED ⋅ ’
VIN
the LED. The inductor value is related to the
switching frequency (fs) setting: With low ESR capacitors, the input voltage
(VIN − VOUT ) ⋅ VOUT ripple can be estimated as:
fs =
VIN ⋅ L ⋅ ILED ⋅ 25% ILED V ⎛ V ⎞
ΔVIN = × OUT × ⎜ 1 − OUT ⎟
Where VIN is the input voltage, and VOUT is the fs × CIN VIN ⎝ VIN ⎠
output voltage that drives the LEDs. A larger-
Choose the input capacitor with a high-enough
value inductor will result in smaller switching
RMS current rating and enough capacitance for
frequency. a small input-voltage ripple.
The peak inductor current is about: Include a small high-quality ceramic capacitor
ILP = ILED ⋅ 1.125 (0.1μF) placed as close to the IC as possible
when using electrolytic or tantalum capacitors.
Choose an inductor that will not saturate under
the maximum inductor peak current. Output Capacitor COUT
Output Rectifier Diode The output capacitor (COUT) is not necessary to
reduce the LED ripple current: The LED ripple
The output rectifier diode supplies the current to current (peak-to-peak value) is about 15% of
the inductor when the high-side switch is off. To the LED DC current. However, the output
reduce losses due to the diode’s forward capacitor can be used to further reduce the
voltage and recovery times, use a Schottky LED ripple current. Use low-ESR capacitors to
diode. limit the output ripple voltage. The output ripple
The RMS current through the diode is about: voltage can be estimated by:
VOUT VOUT ⎛ V ⎞ ⎛ 1 ⎞
ΔVOUT = × ⎜ 1 − OUT ⎟ × ⎜ RESR + ⎟
ID = ILED ⋅ 1 − fS × L ⎝ VIN ⎠ ⎝ 8 × fS × COUT ⎠
VIN
Where RESR is the equivalent series resistance
Choose a diode with a maximum reverse
(ESR) value of the output capacitor.
voltage rating greater than the maximum input
voltage, and a current rating greater than the
maximum diode current.
PACKAGE INFORMATION
SOIC8-EP
0.189(4.80) 0.124(3.15)
0.197(5.00) 0.136(3.45)
8 5
1 4
0.051(1.30)
0.067(1.70)
0.0075(0.19)
SEATING PLANE
0.0098(0.25)
0.000(0.00)
0.013(0.33) 0.006(0.15)
0.020(0.51) SIDE VIEW
0.050(1.27)
BSC
GAUGE PLANE
0.010(0.25) BSC
0.024(0.61) 0.050(1.27)
0.016(0.41)
0o-8o 0.050(1.27)
0.063(1.60)
DETAIL "A"
0.103(2.62) 0.213(5.40)
NOTE:
1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN
BRACKET IS IN MILLIMETERS.
2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS.
3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH
0.138(3.51) OR PROTRUSIONS.
4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING)
SHALL BE 0.004" INCHES MAX.
RECOMMENDED LAND PATTERN 5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION BA.
6) DRAWING IS NOT TO SCALE.
NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee that third
party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not
assume any legal responsibility for any said applications.