objectives

• understand the structure of bipolar junction

transistors (BJT) and junction gate field effect
transistors (JFET)
• understand the action of BJT and JFET devices
• appreciate different classes and applications
for BJT and JFET devices
• draw the circuit symbols for BJT and JFET
devices
• appreciate common base, common emitter and
common collector connections
• appreciate common gate, common source
and common drain connections
• interpret characteristics for BJT and JFET
devices
• appreciate how transistors are used as
Class-A amplifiers
• use a load line to determine the
performance of a transistor amplifier
• estimate quiescent operating conditions
and gain from transistor characteristics
and other data
 What is a transistor?
A transistor is a 3 terminal electronic
device made of semiconductor material.
Transistors have many uses, including
amplification, switching, voltage
regulation, and the modulation of signals
Transistor classification
Transistors fall into two main classes –
bipolar and field effect
They are also classified according to
the semiconductor material employed
Transistors are also classified
according to the application that they
are designed for,
 Bipolar junction transistors
(BJT)
A bipolar junction transistor (BJT) is a three-
terminal electronic device constructed of doped
semiconductor material
It may be used in amplifying or switching
applications.
Bipolar transistors are so named because their
operation involves both electrons and holes.
Charge flow in a BJT is due to bidirectional
diffusion of charge carriers across a junction
between two regions of different charge
concentrations
adjacent regions of doped Si (each
connected to a lead):
o Base. (thin layer , less doped
o Collector.
o Emitter
2 types of BJT:
o npn.
o pnp.
npn bipolar junction transistor
1 thin layer of p-type, sandwiched between 2
layers of n-type
N-type of emitter: more heavily doped than
collector
With VC>VB>VE:
–Base-Emitter junction forward biased, Base
Collector reverse Biased
– There‘s a depletion layer on the Base-Collector
junction --no flow of e- allowed.
– BUT the Base is thin and Emitter region is n+
(heavily doped) --electrons have enough
momentum to cross the Base into the Collector
– The small base current IB controls a large current IC

A transistor operates with a collector

current of 100mA and an emitter current of
102 mA. Determine the value of base
current [20mA]
Transistor parameters
pnp bipolar junction transistor
• 1 thin layer of n-type, sandwiched between 2 layers of p-
type.
• P-type of emitter: more heavily doped than collector.
• The voltages VEB and VCB are positive when they forward
bias their respective pn junctions.
• Collector current and base current exit the transistor
terminals and emitter current enters the device.
• Base current is given by:
Operation of NPN and NPN
Transistor
 Forward-biased junction
With the emitter-to-base junction in the figure
biased in the forward direction, electrons leave
the negative terminal of the battery and enter
the n- material (emitter)
Since electrons are majority current carriers in
the n- material, they pass easily through the
emitter, cross over the junction, and combine
with holes in the p material (base).
For each electron that fills a hole in the p
material, another electron will leave the p
material (creating a new hole) and enter the
positive terminal of the battery
 Reverse-biased junction:
The second pn- junction (base-to-collector), or
reverse-biased junction as it is called blocks the
majority current carriers from crossing the
junction.
However, there is a very small current, that does
pass through this junction
This current is called minority current, or reverse
current. This current was produced by the
electron-hole pairs
The minority carriers for the reverse-biased pn-
junction are the electrons in the p material and
These minority carriers actually conduct the
current for the reverse-biased junction when
electrons from the p material enter the n
material, and the holes from the n- material
enter the p- material.
However, the minority current electrons play
the most important part in the operation of the
npn transistor
Total current f low in the npn transistor is
through the emitter lead.
Therefore, in terms of percentage, IE is 100
percent
On the other hand, since the base is very
thin and lightly doped, a smaller
percentage of the total current (emitter
current) will flow in the base circuit than
in the collector circuit.
Usually no more than 2 to 5 percent of the
total current is base current (IB) while the
remaining 95 to 98 percent is collector
current (IC).
A very basic relationship exists between
these two currents: IE = IB + IC
Operation of PNP Transistor:
 Forward Biased Junction
With the bias setup shown, the positive
terminal of the battery repels the emitter
holes toward the base, while the negative
terminal drives the base electrons toward
the emitter.
When an emitter hole and a base electron
meet, they combine
For each electron that combines with a
hole, another electron leaves the negative
terminal of the battery, and enters the
base.
At the same time, an electron leaves the
emitter, creating a new hole, and enters
the positive terminal of the battery
This movement of electrons into the base
and out of the emitter constitutes base
current flow (IB), and the path these
electrons take is referred to as the emitter-
base circuit.
Reverse Biased Junction
In the reverse-biased junction the negative
voltage on the collector and the positive
voltage on the base block the majority current
carriers from crossing the junction
However, this same negative collector voltage
acts as forward bias for the minority current
holes in the base, which cross the junction and
enter the collector.
The minority current electrons in the
collector also sense forward bias-the positive
base voltage-and move into the base.
The minority current electrons in the collector
also sense forward bias-the positive base voltage-
and move into the base.
The holes in the collector are filled by electrons
that flow from the negative terminal of the btry
At the same time the electrons leave the negative
terminal of the battery, other electrons in the base
break their covalent bonds and enter the positive
terminal of the battery
Although there is only minority current f low in
the reverse-biased junction, it is still very small
coz of the limited number of minority current
carriers
 Transistor Configuration
CE, CB, CC Configurations
We know that transistor has three
terminals namely emitter(E),base(B),
collector(C).
However, when a transistor is connected
in a circuit, we require four terminals (ie)
two terminals for input and two terminals
for output
This difficulty is overcome by using one
of the terminals as common terminal
Depending upon the terminals which are
used as a common terminal to the input
and output terminals, the transistors can
be connected in the following three
different configuration
1. Common base configuration
2. Common emitter configuration
3. Common collector configuration
 Common base configuration
In this configuration base terminal is connected as a
common terminal.
The input is applied between the emitter and base
terminals. The output is taken between the collector and
base terminals.
 Common emitter configuration
In this configuration emitter terminal is connected as a
common terminal
The input is applied between the base and emitter
terminals. The output is taken between the collector and
base terminals
Common collector configuration
In this configuration collector terminal is connected as
a common terminal.
The input is applied between the base and collector
terminals . The output is taken between the emitter and
collector terminals
Common base Characteristics
Input characteristics:
The output(CB) voltage is maintained
constant and the input voltage (EB) is set at
several convenient levels. For each level of
input voltage, the input current IE is recorded.
IE is then plotted versus VEB to give the
common-base input characteristics
The EB junction is essentially the same as a
forward biased diode, therefore the current-
voltage characteristics is essentially the same
as that of a diode
Output characteristics
The emitter current IE is held constant at
each of several fixed levels. For each fixed
value of IE , the output voltage VCB is
adjusted in convenient steps and the
corresponding levels of collector current
IC are recorded.
For each fixed value of IE, IC is almost
equal to IE and appears to remain
constant when VCB is increased
Common-Emitter Characteristics
Input characteristics
The output voltage VCE is maintained
constant and the input voltage VBE is set
at several convenient levels . For each
level of input voltage, the input current IB
is recorded.
IB is then plotted versus VBE to give the
common-base input characteristics
Output characteristics
The Base current IB is held constant at
each of several fixed levels. For each fixed
value of IB , the output voltage VCE is
adjusted in convenient steps and the
corresponding levels of collector current
IC are recorded
.For each fixed value of IB, IC level is
Recorded at each VCE step . For each IB
level, IC is plotted versus VCE to give a
family of characteristics
 Common-Collector Characteristics
Input characteristics:
The common-collector input characteristics
are quite different from either common base
or common-emitter input characteristics
The difference is due to the fact that the input
voltage (VBC) is largely determined by (VEC)
level .
VEC = VEB + VBC
 VEB = VEC - VBC
 Output characteristics
The operation is much similar to that of C-E
configuration .
When the base current is ICO, the emitter current will be
zero and consequently no current will flow in the load.
When the base current is increased, the transistor passes
through active region and eventually reaches saturation.
Under the saturation conditions all the supply voltage,
except for a very small drop across the transistor will
appear across the load resistor
Base-Width Modulation
As reverse-bias across the collector-base
junction increases, the width of the
collector-base depletion layer increases
and the effective width of base decreases
This is called ―base-width modulation
 Early effect:
When the output characteristics are
extrapolated back to where the iC curves
intersect at common point, vCE = -VA
(Early voltage), which lies between 15 V
and 150 V
Comparison of the CB, CE, and CC
Configurations
 Application of BJT
Amplifier circuits to amplify weak signal
Oscillators as active devices
Switch in digital circuits and power transistors
BJTs – Testing
BJTs – Testing
 Field effect transistors
Field effect transistors are available in two basic forms;
junction gate and insulated gate
JUNCTION GATE FIELD effect transistor (JFET)is
effectively a reverse-biased p-n junction
INSULATED GATE FIELD effect transistor (IGFET),
on the other hand, is insulated from the channel and
charge is capacitively coupled to the channel
FET STRUCTURE
JFET transistors comprise a channel of p-type or n-type
material surrounded by material of the opposite polarity
The ends of the channel (in which conduction takes
place) form electrodes known as the source and drain.
The effective width of the channel (in which conduction
takes place) is controlled by a charge placed on the third
(gate) electrode
The effective resistance between the source and drain is
thus determined by the voltage present at the gate.
JFETs offer a very much higher input resistance when
compared with bipolar transistors usually 2,5kohms
FET Transistors
Analogous to BJT BJT FET
Transistors Collector Drain
FET Transistors Base Gate
switch by voltage
Emitter Source
rather than by
current N/A Body
D

S
FET Transistors
FET (Field Effect Transistors)
MOSFET (Metal-Oxide-Semiconductor Field-Effect
Transistor)
JFET (Junction Field-Effect Transistor)
MESFET
HEMT
MODFET
Most common are the n-type MOSFET or JFET
FET Transistors – Circuit Symbols
MOSFET
In practice the body and D D
source leads are almost B
G G B
always connected
Most packages have these S S

leads already connected

JFET
D

S
 FET Transistors
The “Field Effect”
– How it works
The resulting field at the plate causes electrons to gather
As an electron bridge forms current is allowed to flow

Plate
Semi-
conductor
 FET Transistors

JFET MOSFET
gate

gate
P
drain source
N N N
drain source
P
FET Transistors – Characteristics
Current
flow
D

G B

S
 FET Transistors – Regions
Region Criteria Effect on Current Current
flow
Cut-off VGS < Vth IDS=0 D

Linear VGS > Vth Transistor acts like a

And variable resistor, G B

VDS <VGS-Vth controlled by Vgs

S
Saturation VGS > Vth Essentially constant
And current
VDS >VGS-Vth
 JFET vs MOSFET Transistors
Current
MOSFET JFET flow
High switching Will operate at D

speed VG<0
Can have very low Better suited for low G B

RDS signal amplification

S
Susceptible to ESD

More commonly
used as a power
transistor
Power Transistors
• Additional material for
current handling and
heat dissipation
• Can handle high
current and voltage
• Functionally the same
as normal transistors
Transistor Uses
Switching
Amplification
Variable Resistor
Practical Examples - Switching
Practical Examples - PWM
Power to motor is DC motor
proportional to duty
cycle
MOSFET transistor is
ideal for this use
Practical Examples – Darlington Pair
Transistors can be
used in series to
produce a very high
current gain
 Load lines
The a.c. performance of a transistor amplifier stage can
be predicted using a load line superimposed on the
relevant set of output characteristics
Transistor operating in common-emitter mode the
required characteristics are IC plotted against VCE.
One end of the load line corresponds to the supply
voltage (VCC) while the other end corresponds to the
value of collector or drain current that would flow with
the device totally saturated (VCE =0V)
Advantages of JFET
 It
has much higher input impedance
than BJT enabling high degree of
isolation between input and output
FET is less noisy than BJT
FET is easier to fabrication and are
particularly suitable for ICs
FET is normally less sensitive to
temperature
Application of JFET
Phase shift oscillators
Pulse width modulation
Buffers bridging amplifier stages
THE END NEXT TOPIC
Special semiconductors

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3/1/2018 ENG Tengende