Operation NPN Transistor
• Here emitter-base junction is forward biased and collector-base junction is
reverse biased.
• The voltage VEE provides a negative potential at the emitter which repels
the electrons in the N-type material and these electrons cross the emitter-
base junction, to reach the base region.
• There a very low percent of electrons recombine with free holes of P-
region. This provides very low base current IB.
• The remaining holes cross the collector-base junction, to constitute
the collector current IC.
• As an electron reaches out of the collector terminal, and enters the
positive terminal of the battery, an electron from the negative
terminal of the battery VEE enters the emitter region.
• This flow slowly increases and the electron current flows through the
transistor.
Operation PNP Transistor
• emitter-base junction is forward biased and collector-base junction is reverse
biased.
• The voltage VEE provides a positive potential at the emitter which repels the holes
in the P-type material and these holes cross the emitter-base junction, to reach the
base region.
• There a very low percent of holes recombine with free electrons of N-region. This
provides very low current which constitutes the base current IB.
• The remaining holes cross the collector-base junction, to constitute
collector current IC, which is the hole current.
• As a hole reaches the collector terminal, an electron from the battery
negative terminal fills the space in the collector. This flow slowly
increases and the electron minority current flows through the emitter,
where each electron entering the positive terminal of VEE, is replaced
by a hole by moving towards the emitter junction. This constitutes
emitter current IE.
Transistors Configurations
The three types of configurations are
• Common Base
• Common Emitter and
• Common Collector configurations.
• In every configuration, the emitter junction is forward biased and the
collector junction is reverse biased
Common Base (CB) Configuration
Common Emitter (CE) Configuration
Common Collector
(CC)Configuration
Input characteristics:
• To determine input characteristics, the collector base voltage VCB is kept
constant at zero and emitter current IE is increased from zero by increasing
VEB.
• This is repeated for higher fixed values of VCB.
• When VCB is zero EB junctions is forward biased. So it behaves as a diode so
that emitter current increases rapidly.
Output Characteristics
• To determine output characteristics, the emitter current IE is kept constant at zero
and collector current Ic is increased from zero by increasing V CB.
• This is repeated for higher fixed values of IE.
• From the characteristic it is seen that for a constant value of IE, Ic is independent of
VCB and the curves are parallel to the axis of VCB.
Common Emitter (CE) Configuration
Input Characteristics
• To determine input characteristics, the collector base voltage VCB is
kept constant at zero and base current IB is increased from zero by
increasing VBE. This is repeated for higher fixed values of VCE.
• Here the base width decreases. So curve moves right as VCE increases
Output Characteristics
• To determine output characteristics, the base current IB i s kept
constant at zero and collector current Ic is increased from zero by
increasing VCE.
• This is repeated for higher fixed values of IB.
• From the characteristic it is seen that for a constant value of IB, Ic is
independent of VCB and the curves are parallel to the axis of VCE.
Comparison of Transistor
Configurations
