Chapter 2

Bipolar Junction Transistors

LEARNING OBJECTIVES

After reading this chapter, you will be able to understand:

• Transistor construction • Operation modes of transistor
• Transistor symbols • Common emitter configuration
• Transistor current Components • Common collector configuration
• Transistor configurations • Thermal run away
• Common-base configuration • Power rating of transistor

inTroduCTion • The emitter is heavily doped, the base is lightly doped, and
the collector is moderately doped. According to area emitter
When a third doped element is added to a diode in such a way that
is moderate, base is very thin and collector is large to dis-
two pn junctions are formed, the resulting device is known as a tran-
sipate heat.
sistor. Transistors are smaller than vacuum tubes. Invented in 1948
• A transistor has two pn-junction, one junction is forward biased
by J. Barden and W.H. Brattain of Bell Laboratories, USA.
and the other junction is reverse biased. The forward junction
Transistor Construction has a low resistance path, whereas a reverse biased junction has
a high resistance path. The weak signal is introduced at the low
A transistor consists of two-pn-junctions formed by sandwiching
resistance circuit and output is taken from the high resistance
either p-type or n-type semi-conductor between a pair of opposite
circuit. Therefore, a transistor transfers a signal form low resist-
types. Accordingly there are two types of transistors,
ance to high resistance.
Namely, (i) n-p-n transistor;
(ii) p-n-p transistor;
That is Transistor → Transfer + Resistor
An n-p-n transistor is composed of two n-type semiconductor sepa-
A transistor has three sections of doped semiconductors. The
rated by a thin section of p-type.
section on one side is the emitter and the section on the opposite
side is the collector. The middle section is called the base. It forms
two junctions between the emitter and collector.
n p n
E C
1. Emitter: The section on one side that supplies charge carriers
(electrons or holes) is called the emitter. The emitter is always
B forward biased with refer to the base, so that it can supply a
(a) large number of majority carriers.
2. Base: The middle section which forms two pn-junctions
between the emitter and collector is called the base. The
p n p base-emitter junction is forward biased andallowing low
E C resistance for the emitter circuit. The base-collector junction
is reverse biased. So it provides high resistance in the collec-
tor circuit.
B
3. Collector: The section on the other side that collects the
(b) charges is called the collector. The collector is always reverse
Figure 1 Types of transistors (a) n-p-n, and (b) p-n-p biased.
3.120 | Analog and Digital Electronics

E C Transistor Current Components

n p n
IE IC
B E C
− + + 0 +
VEE IE VCC
+ IB IC − 0

(a) VEB VCB

IB

E C
p n p
+0 0−
IE B IC B
+ −
VEE VCC (p-n-p)
IB +
−
(a)
IE IC
(b) E C
+ 0+
Figure 2 Types of transistors (a) n-p-n, (b) p-n-p
0

The transistor has two pn junctions i.e., it is like two

diodes. The junction between emitter and base may be VEB VCB
IB
called emitter-base diode, or emitter diode. The junc-
tion between the base and collector may be called
collector-base diode, or collector diode. The emitter
­ +0 0−
diode is always forward biased and collector diode is B
(n-p-n)
always reverse biased.
The transistor offers Input Impedance very small and (b)
output Impedance high. Figure 3 Circuitrepresentation of the two types of transistors
(a) p-n-p, (b) n-p-n
Rin → Small
Ro ⇒ High The Emitter, base and collector currents IE, IB, and IC
respectively are assumed to be positive when the current
flows into the transistor.
Transistor Symbols (i) For p-n-p transistor:
(i) n-p-n transistor: IE : positive (into)
IB : negative (away)
IC : negative (away)
IC IE IC
E C
IB
B
+
+
VEB B RLVL
IE −

VCC
E
+ −

(ii) p-n-p transistor: (ii) For n-p-n transistor:

IE : negative (away)
IB : positive (into)
C
IC : positive (into)
IC Un-biased Condition
IB
B

p -type n-type p-type

Vo
IE emitter base collector

E JE JC
 Chapter 2 Bipolar Junction Transistors | 3.121

Biased Condition IE = IC + IB
Base IE ≈ IC.
Width But IC < IE
1. Active region: Base-emitter junction forward biased
Vo and collector junction is reverse biased.
i.e., D1 → ON
VEB
D2 → OFF
In this mode transistor works as an amplifier.
VCB 2. Cut off region: In this region emitter junction and col-
lector junctions are both in reverse biased.
\ D1 → OFF
Transistor current components for ⇒ D2 → OFF
p-n-p Transistor i.e., it is OFF switch.
3. Saturation region: In this region both junctions are in
P IPE n IPC
1
P forward biased.
IE IC
IPE − IPC
I i.e., D1 → ON
E C
InE ICO ⇒ D2 → ON
I nCO
At VCE = 0 V . ≈ 0.2 V for Si.

IB Transistor Configurations
Common-base Configuration
B
+ − + − The base is common to both the input and output sides of
VEB VCB the configuration.
KCL at the input junction gives: lE

IE = IPE + InE +
Not all the holes crossing the emitter junction JE reach the VBE VC
Collector junction, JC, because some of them combine with − − +
VEE VCC
the electrons in the n-type base. +
−
– IC = Inc + IPC lC
O o O lB
KVL at the Collector junction gives:
– IC = Ic – IPC = IC – aIE
o l O The arrow in the transistor symbol represents the direction
I PE
∗
of the emitter current. In this circuit input is applied between
(i) Emitter efficiency γ = emitter and base and output is taken from collector and base.
IE
I PC IE = IC + IB
(ii) Transport factor β =
I PE ∆I C
α= at VCB constant
I I
(iii) Current gain α = PC = PC × I PE ∆I E
I IE I PE I E Where, a → current amplification factor.
∴ α = βγ ∗ It is the ratio of change in output current (IC) to change in
input current (IE) at constant VCB.
Operation modes of Transistor ∆I C
∴ α= at VCB = constant
C ∆I E
lC a<1
D2
a, ranges from 0.9 to 0.99
+
lB E C
B VCE
+
VBE − IE = 0
ICBO = ICO
− lE
D1 B

E Figure 4 Reverse saturation current

3.122 | Analog and Digital Electronics

Where ICB ⇒ collector to base emitter open circuit current. ∆VCB

O Output resistance r0 = at constant IE ri of CB circuit
i.e., Reverse saturation current ∆I C
Total current IC = aIE + ICB quite small, in the order of a few ‘W’s r0 is very large, in the
O
But IE = IC + IB order of kW i.e., Ri small and R0 high compare to others.
\ IC = a[IC + IB] + ICB
O Example 1: The early effect in a bipolar junction transistor
IC (1 – a) = aIB + ICB
O is caused by:
α I CB (A) Fast-turnoff
IC = ⋅ IB + O . (B) Fast-turn-ON
1−α 1−α
(C) Large collector-base reverse bias
Transfer characteristics (D) Large VEB forward bias
1. Input characteristics Solution: (C)
IE (mA)
7 Common Emitter Configuration
6 1. n-p-n
5 VCB = 20 V
4 VCB = 10 V IC
C
3 +
VCB = 5 V
2
IB
1 VCE
B+ +
V BE − VCC
VBE (V) + − −
0 0.2 0.4 0.6 0.8 1 V BB E
−
IE
Figure 5 Input or driving point characteristics for a CB silicon
­transistor amplifier.

It is the curve between the IE and VBE at constant VCB.

2. p-n-p
VCB increases IE curves moves towards left.
IC C
2. Output characteristics
IC (mA)
B
Active region
IE =8 mA IB
Saturation IE
5 mA E
region
4 mA
1 mA
Figure 7 Notations and symbols used with the CE-configuration.

In this circuit, input is applied between base and emit-

0 VCB (V) ter and output is taken form the collector and emitter.
Cut-off region

Figure 6 CB Output characteristics. Characteristic of a CE configuration

From the characteristics, it is seen that for a constant 1. Input or base characteristics
value of IE, IC is independent of VCB and the curves are
parallel to the axis of VCB. IC flows even when VCB is IB (mA) VCE = 2 V
equal to zero. 35
VCE = 10 V
30
Early effect or base-width modulation VCE = 15 V
25
As the collector voltage VCB is made to Increase the reverse
bias, the space charge width between the collector and base 20
is increased, with the result that the effective width of the
base decreases, this effect is known as early effect. 0
VBE (V )
0.2 0.4 0.6 0.8
∆VBE
Input resistance, ri = at constant VCB Figure 8 Si transistor input characteristics.
∆I E
 Chapter 2 Bipolar Junction Transistors | 3.123

Input resistance α I
∴ IC = ⋅ I B + CBO
∆VBE 1−α 1−α
Ri =
at const VCE and T
∆I B IC = bIB + ICEO
The values of input resistance for a CE amplifier From the above equation, we get
arein the order of a few hundreds of ohms.
α I CBO
2. Output or collector characteristics β= and I CE =
1−α O
1−α
IC (mA)
or ICEO = (1 + b) ⋅ ICB
O
IC
50 µ A
Common Collector Configuration
max

40 µA
Saturation The CC-configuration is used for Impedance matching
20 µ A
region circuitsit has a high input impedance and low output
10 µA impedance.
IB 0µA IE
E

0 VCE sat VCE max VCE (V)

Cut off region
B
Figure 9 Collector characteristics
IB
In the active region of a CE amplifier, the base emitter C
IC
junction is forward-biased, where as the collector-
base junction is reverse-biased.
Leakage current (a)

C IE
E

IB = 0
I CE O B
B
IB
IC
E C

Where, ICE ⇒ Base open circuit collector to emitter current

O
in CE amplifier, a small current flows, even when the IB = 0. (b)
This is called collector cut off current and is denoted by
C
ICE .
O
(ICE > > ICB )
O O
B
Base current amplification factor (b) The ratio of change
E
in collector current (DIC) to the change in base current (DIB)
is known as current amplification factor. RE
∆I
β= C
∆I B
b, ranges generally from 20 to 500. Figure 10 CC-configuration used for impedance matching ­purpose.
If DC values are considered, (a) n-p-n, (b) p-n-p

I The maximum power dissipation is equal to PC(max) = VCE ⋅ IC

β= C
IB 1. Current amplification factor: The ratio of change in
emitter current (DIE), to the change in base current (DIB) is
Expression for collector current We know,
known as current amplification factor in common collector.
IE = IB + IC
∆I E
I C = α I E + I CBO γ ac =
∆I B
IC = a(IB + IC) + ICB
O The voltage gain of CC amplifier is always less than one.
3.124 | Analog and Digital Electronics

2. Relation between a, b and g :

IC
For DC +
RC
IB RB
I I VCE
α= C,β= C
IE IB + + +
−
VBB VBE VCC
− −
I −
γ = E IE
IB

β α 1
α= ;β= ;γ =
1+ β 1−α 1−α IC (mA)

g =1+b
The currents are always following the below relation. Vcc IB =IB sat
IE : IB : IC = 1 : (1 – a) : a. Rc

IB

Comparison of Various IB = (0)

­ haracteristics of Transistor
c 0 VCE (V)
VCE (sat)
Sl.
No. Characteristic CB CE CC
1. Ri Low (W’s) < Low (W’s) < Very high Cut-off
100 W 100 W (kW’s) <
100 kW
C
2. R0 Very high High (about Low (about
(about 500 50 kW) 50 W)
kW) D2

3. Voltage gain Av ≈ 150 Av ≈ 500 Av < 1

4. Current gain Ai < 1 (a) High (b) High (g) B

5. Applications For high For audio Impedance

frequency frequency matching D1
applications applications

E
From the above analysis:
Ri → Low for CB configuration (compare to others); In this region emitter diode (D1) and collector diode (D2)
Ri → Very high for CC configuration; both are in OFF state. i.e.,
Output impedance (R0):
C
R0 → Low for CC configuration; IC = 0
R0 → Very high for CB configuration;
IB = 0
Out of the three transistor connections, the common emitter
B
circuit is the most efficient, the main reason for this usage:
IE = 0
1. High current gain;
2. High voltage and power gain; E
3. Moderate Output to Input ratio.
That is R0/Ri less compare to others. Transistor in cut-off mode: The point where the load line
intersects the IB = 0 curve is known as cut-off. At this point
IB = 0 and only small collector current or leakage current
Transistor and Its Region of Operations ICE exists.
O
CE transistor circuit and the o/p characteristic along with
the DC load line. \ VCE (cut off) = VCC.
 Chapter 2 Bipolar Junction Transistors | 3.125

Active region Solution: (B)

The region between the cut off and saturation is known as In active region IC = b ⋅ IB
active region. In this region collector-base junction remains Saturation region IC(Sat) < b ⋅ IB.
reverse biased (D2 → OFF) and base-emitter junction in Example 3: If for a Si npn transistor, the VBE = 0.7 V and
forward biased (D1 → ON). VCB = 0.2 V, then the transistor is operating in the
C (A) Cut-off region
(B) Active region
IC = b ⋅ IB (C) Saturation region
IB (D) Inverse active mode
B IE Solution: (B) VBE = 0.7 V
That is VB – VE = 0.7 V
E \ VB > VE ⇒ emitter diode forward bias
VCB = 0.2 V
⇒ VC > VB ⇒ collector junction is in reverse bias.
That is in active region emitter diode is ON and collector So, the transistor is in the normal active mode.
diode is OFF.
Note: We provide biasing to the transistor to it operates in Modes of operation of BJT
the active region.
VCB
Saturation region
In this region both the junctions are in forward biased and
normal transistor action is lost. i.e., Emitter diode and Cut-off Active region
collector diodes are ON. (VBE, VCB ) (VBE , VCB )
− + + +
C
IC = I E
B − VBE VBE
Saturation
Reverse active
− − region
(VBE , VCB ) (VBE, VCB )
E
+ −

At VCE ≈ 0 V
− VCB
V
∴ I C ( sat ) = CC
RC Notes
VCE = VCE (sat) = Vknee. 1. For a silicon transistor generally considered:
VCE(sat) = 0.2 V
VCE(sat) or Vknee can be neglected as compared to VCC. VBE(active) = 0.7 V and
⇒ At room temperature VCE drop of a silicon transistor at VBE(sat) = 0.8 V.
saturation is approximately VCE(sat) = 0.3 V
2. For Ge transistor:
Example 2: If the transistor in the figure is in saturation, VCE(sat) = 0.1 V
then VBE(active) = 0.2 V
(A) IC = bdc ⋅ IB (B) IC < bdc ⋅ IB VBE(sat) = 0.3 V and
(C) IC ≥ bdc ⋅ IB (D) None of the above
VBE(cut off) = 0 V
C
IC
Thermal Run Away
IB
B b dc The collector IC = b . IB + (1 + b). ICB . The three variables in
O
the equation b, IB and ICB increase with rise in temperature.
O
IE The reverse saturation current ICO is more sensitive with
temperature, it doubles for every 10°C raise in temperature.
E As a result, IC will increase still further. Which will further
3.126 | Analog and Digital Electronics

rise the temperature at the collector-base junction. This pro- Solution: (C) Apply KVL to the input loop:
cess is called as ‘Thermal run away’. VBB − VBE 1.3
T
IB = = = 0.13 mA
RB 10 kΩ
IC
IB
IC(active) = b ⋅ IB = 75 × 0.13 mA = 9.75 mA
VCE = VCC – IC ⋅ RC = 10 – 9.75 = 0.25 V
I CBO T PD = IC ⋅ VCE
The collector is normally larger in size than the others because = 9.75 × 0.25 mW = 2.43 mW.
to help dissipate the heat developed at the collector junction. Example 7: In a CB configuration current configuration
Example 4: To avoid thermal run away in the design of an factor is 0.9, if the emitter current is: 1.8 mA. The value
analog circuit, the operating point of the BJT should be such of IB is:
that it satisfies the condition. (A) 1.17 mA. (B) 0.18 mA.
VCC (C) 13 mA. (D) 1.3 mA.
(A) VCE = VCC (B) VCE ≥
2 2 Solution: (B)
VCC IC
(C) VCE < (D) None of the above We know, α =
2 IE
Solution: (C) IC = aIE = 0.9 × 1.8 mA = 1.62 mA
IB = IE – IC = 0.18 mA.
Power Rating of Transistor Example 8: For a certain transistor, IB = 15 mA, IC = 2 mA
The maximum power that a transistor can handle without and b = 100. The value of leakage current ICB is:
O
destruction is known as power rating of the transistor. (A) 4.95 mA. (B) 5 mA.
The maximum power is dissipated by: (C) 3 mA. (D) 4.95 mA.
Pmax = IC ⋅ VCE(max)
Solution: (A)
If VCE > VCE(max), the transistor will be destroyed due to We know, IC = b ⋅ IB + (1 + b) ⋅ ICB
O
excessive heat.
0.5
Example 5: The maximum power dissipation of a transistor lCBO = mA = 4.95 µA.
    101
is 80 mW. If VCE = 10 V, the maximum collector current that
can be allowed without destruction of the transistor is: Example 9: In a junction transistor, the collector cut off
(A) 5 mA. (B) 7 mA. current ICB reduces considerably by doping the:
O
(C) 8 mA. (D) 10 mA. (A) Emitter with low level of impurity.
(B) Emitter with high level of impurity.
Solution: (C)
(C) Collector with high level of impurity.
We know, PD(max) = IC(max) . VCE
(D) Base with high level of impurity.
80 mW
lCE ( max ) = = 8 mA. Solution: (B)
10 V We know, IC = aIE + ICB
O
Example 6: For the circuit shown in the Figure: lC − lCBO
α= ⇒ α ↑⇒ lCBO ↓ .
VCC = 10 V lE
Example 10: For a BJT circuit shown, assume that the ‘b’
RC 1 kΩ of the transistor is very large of VBE = 0.7 V. The mode of
operation of the BJT is:
10 kΩ
VBB 10 kΩ R1
b = 75
+2 V RB +
VBE
− ± 10 V
2V ± R 2 1 kΩ

The power dissipation in the transistor is:

(A) 2 mW (B) –2.8 mW
(C) 2.43 mW (D) 3 mW
 Chapter 2 Bipolar Junction Transistors | 3.127

(A) Cut-off region (B) Saturation region Solution: IC = 5.6 mA

(C) Normal active (D) Reverse active IE = 5.75 mA
Solution: (B) l
α DC = C = 0.974.
Let us assume transistor is in saturation region. lE
+ 10 V Example 15: A BJT has a base current of 200 mA and
emitter current of 20 mA. Determine collector current and b
R 1 10 kΩ
Solution: IB= 200 mA
IE = 20 mA
2V + Ic = IE - IB
V BE = 20 × 10-3 - 200 × 10-6
−
R2 IC = 19.8 mA
1 kΩ
I
β= C
IB
b = 99
10 Example 16: A BJT has a collector current of 4 mA and
I C ( sat ) = mA
11 base current of 20 mA. Determine its b.
Apply KVL in i/p loop Solution: IC = 4 mA
VBB = VBE + IC ⋅ R2 IB = 20 mA
VBE = 2 – 0.909 I
β = C = 200.
= 1.09 V IB
\ VBE > 0.7. So transistor is in saturation mode.
Example 17: Determine VC and VB for the network.
Example 11: In a certain transistor, IC = 0.98 mA and IB =
20 mA. Determine (i) IE, (ii) a and (iii) b
Solution: 1.2 kΩ RC
(i) IE = IB + IC = 0.98 + 0.02
IE = 1.0 mA C1 Vo
I 0.98 Vi b = 45
(ii) α = C = = 0.98
IE 1.0
100 kΩ
VEE = −9
I 0.98
(iii) β = C = = 49
I B 0.02
Example 12: A BJT has IB = 10 mA, b = 99 and IC = 1 mA.
What is the collector current IC?
O
Solution: -IBRB - VBE + VEE = 0

Solution: IC = bIB + (1 + b) ICB VEE − VBE 9 − .7 8.3

IB = = = = 83 µA

O
=99 × 10 × 10-6 + (1 + 99) 1 × 10--6 RB 100 kΩ 100 kΩ
IC = 1.09 mA IC = bIB = 45 × 83 mA = 3.735 mA
Example 13: Determine the emitter current. IE, collector VC = - ICRC = - (3.735 mA) (1.2 kW)
current IC for a transistor with aDC = 0.97 and collector to   = - 4.48 V
base leakage current 10 mA, IB is 50 mA. VB = -IBRB­
  = -(83 mA) (100 kW) = -8.3 V.
Solution: Ic = b ⋅ IB + ( 1+ b) ICB
O Example 18: For the given circuit find the value of RB that
α 0.97
β= = would be just sufficient to drive the transistor to saturation?
1 − α 1 − 0.97
b = 32.33 10 V VCC
hfe = 50
IC = 32.33 × 50 × 10-6 + (1 + 32.33) × 10 × 10-6 RC Vbesat = .7 V
IC = 1.95 mA RB
Vcesat = .1 V
IE = IB + IC= 2 mA RC = 3 kΩ

Example 14: In a particular transistor, the collector current 10 V

is 5.6 mA and emitter current is 5.75 mA. Determine aDC
3.128 | Analog and Digital Electronics

Solution: The value of RB required into drive the transistor VCC = ICRC
to saturation.
10
V − VB sat IC = = 3.33 mA
I C ≤ hF ∈ × BB 3 kΩ
RB
10 − .7 50 × 9.3
RB ≤ 50 × RB ≤ = 139 kΩ ∼ 140 kΩ
IC 3.33 mA

Exercises
Practice Problems 1 (A) 200 W (B) 250 W
(C) 2.5 kW (D) 2 kW
Directions for questions 1 to 24: Select the correct alterna-
tive from the given choices. 5. +12 V

Common Data for Questions 1 and 2:

R1 2 kΩ
+20 V

100 Ω
IC
Vo = ?
25 kΩ
Q1 200 Ω
IB
Q2

I E = 120 mA If a = 0.98 and VBE = 0.7 V, the value of resistor R1 for

an emitter current of 2 mA is _______
(A) 81.1 kW (B) 8.11 kW
Assume both Transistors are in Active region and neglect (C) 44 kW (D) 19.6 kW
reverse saturation currents. If a1 = 0.99 and a2 = 0.98
6. +20 V
1. The value of Vo shown is:
100 kΩ
(A) 6 V (B) 12 V
(C) 8 V (D) 10 V IC

I  q1
2. The value of overall β is  C  is: IB
 IB  q2
(A) 5000 (B) 5001
IE = 120 mA
(C) 4999 (D) 4998
Common Data for Questions 3 and 4: Assume both transistors are in Active regions. If a1 = 0.99
 IC 
250 Ω
and a2 = 0.98, then the value of overall α  I  is _______
RC  E
30 kΩ (A) 0.99 (B) 0.9998
b = 100
RB
(C) 0.998 (D) 0.98
VBB VCC 12 V
7. +VCC = 20 V

RC = 5 kΩ
RB

3. If VCE = 6 V, the value of VBB required is _______

b = 100
(A) 7 V (B) 7.9 V
(C) 8 V (D) 7.8 V (SI)

4. If VCC is changed to 6 V in the given circuit, the R C = 100 Ω

value of RC required to achieve the Q-point Q (2 V,
16 mA).
 Chapter 2 Bipolar Junction Transistors | 3.129

Assume the transistor is in active region. If VCE = 11. +24 V

4 V, find the value of RB.
82 kΩ 100 kΩ 1 kΩ
(A) 100 kW
Q2
(B) 106 kW
(C) 104 kW Q1
(D) 98 kW
10 kΩ 100 Ω
8. 20 V

Assume, both Transistor are in Active region with b1 =

90 kΩ
100, b2 = 50 and VBE = VBE = 0.7 V. The value of VCE of
5 kΩ 1 2
Q1 is
(A) 14.1 V (B) 13.1 V
b = 50
(C) 14.9 V (D) 13.9 V
+25 V
10 kΩ 12.
1 kΩ
15 kΩ

40 kΩ
Assume the transistor is in Active region. The value of b = 50
+10 V
thecollector current. IC is _______
(A) 2 mA Re
(B) 1.085 mA
(C) 1.85 mA
(D) 0.021 mA
9. +24 V The value of Re, for which the Transistor just comes out
of saturation region.
82 kΩ 100 kΩ (A) 742 W (B) 7.42 kW
1 kΩ
Q2
I C1
V0 (C) 472 W (D) 4.72 kW
I B2
Q1 25 V
13.
100 kΩ 3 kΩ
10 kΩ

50 kΩ
b = 100
Assume, both Transistors are in Active region with VBE +10 V
1
= VBE2 = 0.7 V. b1 = 100 and, b2 = 50. The ratio of IC /IB
1 2
is _______ 2 kΩ
(A) 5000
(B) 5100
(C) 4900
(D) 490 Find the region of operation of transistor shown.
+10 V
(A) Cut-off (B) saturation
10. (C) Active (D) inverse Active
4.66 kΩ
14.
+5 V
b = 100
+5 V
3 kΩ
RB
V0
360 kΩ
b = 40 27 kΩ
The Maximum value of RB for which the Transistor +30 V
remains at saturation is _______ 40 kΩ
−10 V
(A) 20 kW (B) 2 kW
(C) 200 kW (D) 20 W
3.130 | Analog and Digital Electronics

Find the region of operation of the transistor, shown. (A) RB ≤ 200 kW (B) RB ≥ 200 kW
(A) Active (B) Saturation (C) RB ≤ 100 kW (D) RB ≥ 10 kW
(C) Cut-off (D) Reverse active 18. RC
15. +10 V
I CB
O VCC
RB
Si
100 kΩ −
2 kΩ
8V
+

b = 100
If the reverse saturation current of Si Transistor is
10 nA at room temperature (25°C) and increases by a
1 kΩ
factor of 2 for each temperature increase of 10°C. The
maximum allowable value for RB if the transistor is to
remain cut-off at a temperature of 185°C _______
(A) 122 kW (B) 12.2 kW
Neglect the junction voltages. The transistor is operat- (C) 12.2 MW (D) 1.22 MW
ing in _______ region.
19. 2.2 kΩ
(A) Active (B) Saturation
(C) Reverse Saturation (D) Cut-off +
Si 12 V
16. +12 V 15 kΩ −
Vin o b = 30

100 kΩ
1.3 kΩ 0.5 kΩ
4 kΩ
U0 − 12 V

Find VCE if Vin = 12 V

Q2
Q1 (A) 8.8 V (B) 0.2 V
(C) 11.8 V (D) 3.8 V
20. +12
+
6V 2.2 kΩ
− 1 kΩ 1 kΩ
Vo
RB Si
12 V
b = 30
100 kΩ
Assume b of each transistor is 100. Find the value of Vo
is:
(A) 8.5 V (B) 12 V −12 V
(C) 7.5 V (D) 9 V
Find minimum value of R1 for which the transistor is in
17. 2 kΩ the Active region.
(A) 17 kW (B) 27 kW
+ (C) 37 kW (D) 33 kW
RB 12 V
Si − 21. Find the punch through voltage of a NPN silicon
b = 30
+ Transistor of alloy type, if the width of base region is
20 V 2 mm and resistivity of base is 1 W cm.
− (A) 38 V
(B) 10 V
For what values of RB will the Transistor remain below (C) 28 V
cut off region if ICB = 100 mA: (D) 18 V
O
 Chapter 2 Bipolar Junction Transistors | 3.131

22. +10 V If b of each transistor is 100, find Vo.

(A) +4 V
(B) +5 V
I REF R
IL = 1 mA (C) –4 V
(D) –5 V
Vo
24. +12 V
Q1 + Q2

− VBE 2.2 kΩ
Vo
15 kΩ Si
1V
−10 V b = 30

Find the value R, such that load current is equal to 1 mA. 100 kΩ
(A) 10 kW (B) 9.3 kW
(C) 19.3 kW (D) 10.7 kW
23. −12 V
+5 V
Assume reverse saturation current ICB = 10 nA at
O
Q1
25°C. Find the maximum temperature. At which tran-
10 kΩ sistor remains at cut-off.
V0
+5 V (A) 129°C
1 kΩ (B) 149°C
Q2
(C) 124°C
(D) 134°C
−5 V

Practice Problems 2 Common Data for Questions 3 and 4:

Directions for questions 1 to 20: Select the correct alterna-
RC
tive from the given choices.

1. IC RB
b = 100
+
− VCB VBB VCC
VEB
+ 100 Ω 6V 12 V
−
VCC
− +
3. Assume the Transistor used is silicon with VBE = 0.7 V,
the values of RC and RB so that IC = 12 mA and
If IC = 15 mA and VCB = 3 V then the value of VCC VCE = 6 V.
required is _______
(A) 0.5 kW, 44 kW
(A) 4 V
(B) 4.5 V (B) 5 kW, 44 kW
(C) 3.15 V (C) 4.4 kW, 50 kW
(D) 18 V (D) 4 kW , 50 kW
4. The values of RC and RB if a 200 W emitter resistor is
2. Find the value of VCB, if the supply voltage VCC
included so that IC = 12 mA and VCE = 6 V.
decreases by 1 V in part (i), and IC remains the same,
(A) 300 W, 24 kW
(A) 3 V
(B) 3.5 V (B) 0.3 kW, 42 kW
(C) 2 V (C) 24 kW, 42 kW
(D) 2.5 V (D) 2.4 kW, 24 kW
3.132 | Analog and Digital Electronics

5. Assume the transistor is in Active region. If IC = 19.6 mA Find the value of collector current, following through
then the value of VCB is _______ the circuit.
+8 V (A) 1.57 mA
(B) 3.15 mA
400 Ω
(C) 1.75 mA
50 kΩ
(D) 3.51 mA
9. +25 V

3 kΩ

RB
b = 100
+10 V
(A) 0.55  V (B) –0.55  V (C) 0.85  V (D) –0.85  V
6. +10 V
2 kΩ
4.66 kΩ

b = 100
+5 V
RB
The smallest value of RB, such that the transistor is in
active region.
(A) 24 kW (B) 2.4 kW
The minimum value of RB for which the transistor (C) 42 kW (D) 0 W (zero)
remains in Active region is _______
10. +5 V
(A) 200 kW (B) 205 kW
(C) 20 kW (D) 21 kW 3 kΩ
7. + 25 V

15 kΩ V0
360 kΩ
IC +15 V
b = 40 27 kΩ
40 kΩ
b = 50
+10 V 40 kΩ
−10 V
5 kΩ

Find the value of V0.

The value of IC is _______ (A) 3.5 V (B) +5 V
(A) 1.57 mA (B) 3.15 mA (C) –10 V (D) 1.1 V
(C) 1.22 mA (D) 0.68 mA 11. +10 V

8. +25 V

1.5 kΩ
100 kΩ 2 kΩ

40 kΩ
b = 50
+10 V b

5 kΩ
1 kΩ
 Chapter 2 Bipolar Junction Transistors | 3.133

Neglect junction voltages: Find the Minimum value of 15. +10 V

b, that will saturate the Transistor:
5 kΩ
(A) 50 (B) 70
(C) 49 (D) 51
IB
12. +12 V b = 50

1 kΩ 10 kΩ
500 Ω
4 kΩ
V0
−10 V
Q2 If VBE = 0.7 V, find VCE.
Q1
(A) 5.45 V (B) 0.7 V
(C) 0.2 V (D) 6.15 V
16. +12 V
+
2.2 kΩ
Vin
− 1 kΩ 10 kΩ
Vo
15 kΩ Si
+1 V
b = 30

100 kΩ
Neglect reverse saturation currents and assume each
transistor has b = 100.
The value of Vo, if Vin = 0 V:
−12 V
(A) 12 V (B) 9 V
(C) 8.5 V (D) 7.5 V Find the value of Vo
(A) 0.2 V (B) 12 V
13. 2 kΩ (C) 7.6 V (D) 9.8 V
+
17. × Open

12 V
RB −
b = 30
+10 V
+ V0
20 V 50 µA
−

Find the output voltage if the transistor has BVCB = 70 V:

The minimum value of RB, which keeps the transistor in O
(A) –70 V (B) –10 V
saturation region, is:
(C) –10.7 V (D) –60 V
(A) 97 kW (B) 86 kW
(C) 125 kW (D) 68 kW 18. Find the largest value of RC while maintaining the tran-
sistor in active mode:
14. RC
+10 V

RC
VCC
Si
20 kΩ
− b = 100
2V
+

2 kΩ
If ICB = 10 nA at 25°C, the maximum temperature that
O
the transistor can with stand by keeping itself in cut-off −10 V
region is:
(A) 148°C (B) 208°C (A) 2.28 kW (B) 2.42 kW
(C) 168°C (D) 188°C (C) 3.21 kW (D) 4.23 kW
3.134 | Analog and Digital Electronics

19. +10 V 20. • +10 V

RC
7.5 kΩ
Vo

b = 100
RE

−10 100 kΩ 1 mA

Assume large value of b. Find the values of RC and RE,

to achieve IC = 1 mA and VCB = +4 V.
The value of Vo for the given ckt is:
(A) 9.3 K, 6 K (A) 2.5 V
(B) 6 K, 10.7 K (B) 2.4 V
(C) 3.9 K, 10.7 K (C) 2.6 V
(D) 6 K, 3.9 K (D) 10 V

Previous Years’ Questions

1. Consider the circuit shown in figure. If the b of the (C) Reverse active region
transistor is 30 and ICB is 20 nA and the input voltage (D) Forward active region
O
is +5 V, then transistor would be operating in: [2006] 3. The three-terminal linear voltage regulator is connected to
+12 V a 10 W load resistor as shown in the figure. If   Vin is 10 V,
what is the power dissipated in the transistor?[2007]

+10 V
2.2 kΩ 1 kΩ
V in RL = 10 Ω
15 kΩ 6.6 V
Vi Q Zener diode
0
100 kΩ
(A) 0.6 W (B) 2.4 W
−12 V (C) 4.2 W (D) 5.4 W
4. The input signal Vin shown in the figure is a 1 kHz square
(A) Saturation region (B) Active region wave voltage that alternates between +7 V and –7 V with
(C) Breakdown region (D) Cut-off region a 50% duty cycle. Both transistors have the same current
2. The common emitter forward current gain of the tran- gain, which is large. The circuit delivers power to the
sistor shown is bF = 100.[2007] load resistor R1. What is the efficiency of this circuit for
the given input? Choose the closest answer. [2007]
+10 V
+10 V

1 kΩ

V in

270 kΩ
RL = 10 Ω
1 kΩ

The transistor is operating in: −10 V

(A) Saturation region (A) 46% (B) 55%
(B) Cutoff region (C) 63% (D) 92%
 Chapter 2 Bipolar Junction Transistors | 3.135

5. The equivalent capacitance of the input loop of the 8. Transformer and emitter follower can both be used for
circuit shown is: [2009] impedance matching at the output of an audio ampli-
fier. The basic relationship between the input power
i 1 1 kΩ 1 kΩ Pin and output power Pout in both the cases is:
[2012]
1 kΩ
(A) Pin = Pout for both transformer and emitter follower
Input 49i 1
100 µF (B) Pin > Pout for both transformer and emitter follower
loop
100 µF (C) Pin < Pout for transformer and Pin = Pout for emitter
follower
(D) Pin = Pout for transformer and Pin < Pout for emitter
(A) 2 mF (B) 100 mF follower
(C) 200 mF (D) 4 mF
9. The voltage gain Av of the circuit shown below is:
6. The transistor circuit shown uses a silicon transistor [2012]
with VBE = 0.7 V, IC ≈ IE and a DC current gain of 100. 13.7 V
The value of Vo is: [2010]
12 kΩ
+10 V
C VO
100 kΩ
C
10 kΩ 50 Ω
Vi ∼ 10 kΩ b = 100

V0 (A) Av ≈ 200 (B) Av ≈ 100

100 Ω (C) Av ≈ 20 (D) Av ≈ 10

10. The transistor in the given circuit should always be

in active region. Take VCE(sat) = 0.2 V, VBE = 0.7 V.
The maximum value of Rc in W which can be used is
(A) 4.65 V (B) 5 V ______. [2014]
(C) 6.3 V (D) 7.23 V

7. The transistor used in the circuit shown below has a b

of 30 and ICB is negligible. [2011]
O RC

+
2.2 kΩ Rs = 2 kΩ 5V
15 kΩ
b = 100
1 kΩ D
VBE = 0.7 V
+
VCE (sat) = 0.2 V 5V

V2 = 5 V

−12 V
11. In the given circuit, the silicon transistor has b = 75
and a collector voltage VC = 9 V. Then the ratio of RB
If the forward voltage drop of diode is 0.7 V, then the and RC is ______. [2015]
current through collector will be
(A) 168 mA (B) 108 mA
(C) 20.54 mA (D) 5.36 mA
3.136 | Analog and Digital Electronics

15 V 13. When a bipolar junction transistor is operating in the

saturation mode, which one of the following state-
ments is TRUE about the state of its collector-base
(CB) and the base-emitter (BE) junctions? [2015]
RC (A) The CB junction is forward biased and the BE
junction is reverse biased.
RB
VC (B) The CB junction is reverse biased and the BE
junction is forward biased.
(C) Both the CB and BE junctions are forward
biased.
(D) Both the CB and BE junctions are reverse
baised.
14. A transistor circuit is given below. The Zener diode
breakdown voltage is 5.3 V as shown. Take base to
12. The following circuit, the transistor is in active mode emitter voltage drop to be 0.6 V. The value of the cur-
and VC = 2 V. To get VC = 4 V, we replace RC with RC′ . rent gain β is _________. [2016]
R1
Then the ratio C is_____. [2015]
RC
+10 V

RC

RB VC

Answer Keys
Exercises
Practice Problems 1
1. C 2. C 3. B 4. B 5. A 6. C 7. B 8. B 9. B 10. C
11. B 12. B 13. C 14. B 15. B 16. B 17. A 18. B 19. B 20. C
21. A 22. C 23. A 24. B

Practice Problems 2
1. B 2. C 3. A 4. A 5. B 6. B 7. C 8. A 9. D 10. D
11. A 12. C 13. A 14. B 15. D 16. B 17. D 18. A 19. B 20. C

Previous Years’ Questions

1. B 2. D 3. B 4. B 5. A 6. A 7. D 8. D 9. D
10. 22.32 11. 105.133 12. 0.74 to 0.76 13. C 14. 18.0 to 20.0