BD239C
NPN SILICON POWER TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The BD239C is a silicon epitaxial-base NPN
transistor in Jedec TO-220 plastic package.
It is inteded for use in medium power linear and
switching applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CER Collector-Emitter Voltage (R BE = 100Ω) 115 V
V CEO Collector-Emitter Voltage (IB = 0) 100 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 2 A
I CM Collector Peak Current 4 A
IB Base Current 0.6 A
o
P t ot Total Dissipation at Tc ≤ 25 C 30 W
o
P t ot Total Dissipation at Tamb ≤ 25 C 2 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
April 1999 1/4
BD239C
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 4.17 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 100 V 0.2 mA
Current (V BE = 0)
I CEO Collector Cut-off V CE = 60 V 0.3 mA
Current (I B = 0)
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus )∗ Collector-Emitter I C = 30 mA 100 V
Sustaining Voltage
V CE(sat )∗ Collector-Emitter IC = 1 A IB = 0.2 A 0.7 V
Saturation Voltage
V BE ∗ Base-Emitt er Voltage IC = 1 A V CE = 4 V 1.3 V
h F E∗ DC Current Gain I C = 0.2 A V CE = 4 V 40
IC = 1 A V CE = 4 V 15
h fe Small Signal Current I C = 0.2 A V CE = 10 V f = 1MHz 3
Gain I C = 0.2 A V CE = 10 V f = 1KHz 20
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Safe Operating Areas
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BD239C
TO-220 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
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BD239C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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