Diode Semiconductor Korea 1N6 0

VOLTAGE RANGE: 40V

SMALL SIGNAL SCHOTTKY DIODE
CURRENT: 0.03 A

FEATURES
Metal s illicon junction m ajority carrier conduction DO - 35(GLASS)
High current capability,low forward voltage drop
Extrem ely low revers e current IR
Ultra s peed s witching characteris tics
Sm all tem perature coefficient of forward
ffffff characteris tics
Satis factory wave detection efficiency
For us e in RECORDER. TV. RADIO. TELEPHONE
as detectors ,s uper high s peed s witching circuits ,
s m all current rectifier
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Dimensions in millimeters
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram

ABSOLUTE RATINGS(LIMITING VALUES)

Value
Parameters Symbols UNITS
1N60
Repetitive peak reverse voltage VRRM 40.0 V

Forw ard continuous current TA =25 IF 30.0 mA

Peak f orw ard surge current (t=Is) IFSM 150.0 mA

Storage and junction temperature range TSTG /TJ XX- 55 ---- + 150
Maximum lead temperature f or soldering during 10s at 4mm f rom case TL 230

ELECTRICAL CHARACTERISTICS

Value
Parameters Symbols Test Conditions UNITS
Min. Typ. Max.
IF =1m A 1N60 0.32 0.5
Forward voltage VF V
IF =30m A 1N60 0.65 1.0

Reverse current IR VR =15V 1N60 0.1 0.5 A

Junction capacitance CJ VR =1V f=1MHz 1N60 2 pF

Vl =3V f=30MHz
Detection efficiency (See FIG. 4) 60.0 %
C L=10 PF R L=3.8K

Reverse recovery time t rr IF =IR =10m A trr =1m A ,R L=100 1 ns

Therm al res is tance,junction to am bient Rθ JA 400

[Link]
Diode Semiconductor Korea 1N60

FIG.1 -- FORWARD CURRENT VERSUS FORWARD FIG.2 -- REVERSE CURRENT VERSUS

VOLTAGE (TYPICAL VALUES) CONTINUOUS REVERSE VOLTAGE

mA
100 A
1.40
90
1.20
IF 80
70 IR 1.00
60 0.80

50 0.60
40
0.40
30
0.20
20
0
0 5 10 15 20 25 30 V
10
VR
0
0 0.2 0.4 0.6 0.8 1.0V
VF

FIG.3 -- JUNCTION CAPACITANCE VERSUS CONTINUOUS FIG.4 -- DETECTION EFFICIENCY

REVERSE APPLIED VOLTAGE MEASUREMENT CIRCUIT

pF
4.0

3.5
D.U.T output
3.0

CJ 2.5
2.0 CL
10PF
Input:3VRMS RL
1.5 3.8K

1.0

0.5

0
0 1 2 3 4 5 6 V
VR

[Link]