® STTA112U

TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE

MAIN PRODUCT CHARACTERISTICS

IF(AV) 1A

VRRM 1200V

trr (typ) 65ns

VF (max) 1.5V

FEATURES AND BENEFITS

SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGNETIZATION
AND RECTIFICATION
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN SMB
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY

DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in They are particularly suitable in motor control
all high voltage operations which require extremely circuitries, or in primary of SMPS as snubber,
fast, soft and noise-free power diodes. clamping or demagnetizing diodes. They are also
Due to their optimized switching performances suitable for the secondary of SMPS as high voltage
they also highly decrease power losses in any rectifier diodes.
associated switching IGBT or MOSFET in all
freewheel mode operations.
ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V
IF(RMS) RMS forward current 6 A
IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 10 A
IFSM Surge non repetitive forward current tp = 10ms sinusoidal 20 A
Tstg Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature 125 °C

TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed: 5A 1/8
STTA112U

THERMAL AND POWER DATA

Symbol Parameter Test conditions Value Unit

Rth(j-I) Junction to lead thermal resistance 23 °C/W
P1 Conduction power dissipation IF(AV) = 0.8A δ = 0.5 1.4 W
Tlead= 93°C
Pmax Total power dissipation Tlead= 90°C 1.5 W
Pmax = P1 + P3 (P3 = 10% P1)

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions Min Typ Max Unit

VF * Forward voltage drop IF = 1A Tj = 25°C 1.65 V
Tj = 125°C 1.1 1.5
IR ** Reverse leakage current VR = 0.8 x Tj = 25°C 10 µA
VRRM Tj = 125°C 90 300
Vto Threshold voltage Ip < [Link](AV) Tj = 125°C 1.15 V
Rd Dynamic resistance 350 mΩ
Test pulses : * tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = Vto x IF(AV) + Rd x IF2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

TURN-OFF SWITCHING
Symbol Parameter Test conditions Min Typ Max Unit
trr Reverse recovery Tj = 25°C ns
time IF = 0.5 A IR = 1A Irr = 0.25A 65
IF = 1 A dIF/dt =-50A/µs VR = 30V 115
IRM Maximum recovery Tj = 125°C VR = 600V IF = 1A A
current dIF/dt = -8 A/µs 1.8
dIF/dt = -50 A/µs 5
S factor Softness factor Tj = 125°C VR = 600V IF =1A -
dIF/dt = -50 A/µs 0.7

TURN-ON SWITCHING

Symbol Parameter Test conditions Min Typ Max Unit

tfr Forward recovery time Tj = 25°C 900 ns
VFp IF = 1 A, dIF/dt = 8 A/µs
Peak forward voltage 35 V
measured at 1.1 × VF max

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Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward cur-
rent (Maximum values).

P1(W) IFM(A)
1.50 50.0
δ = 0.1 δ = 0.2 δ = 0.5
Tj=125°C
1.25
10.0
1.00 δ=1

0.75

0.50 1.0

0.25
IF(av) (A)
VFM(V)
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig. 3: Relative variation of thermal transient im- Fig. 4: Peak reverse recovery current versus dIF/dt
pedance junction to lead versus pulse duration. (90% confidence).

IRM(A)
15.0
VR=600V
12.5 IF=2*IF(av)
Tj=125°C

10.0

7.5

5.0

2.5
dIF/dt(A/µs)
0.0
0 20 40 60 80 100 120 140 160 180 200

Fig. 5: Reverse recovery time versus dIF/dt (90% Fig. 6: Softness factor (tb/ta) versus dIF/dt (Typical
confidence). values).

trr(ns) S factor
300 1.00
IF=2*IF(av) VR=600V IF<2*IF(av) VR=600V
250 Tj=125°C Tj=125°C

200 0.80

150

100 0.60

50
dIF/dt(A/µs) dIF/dt(A/µs)
0 0.40
0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200

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Fig. 7: Relative variation of dynamic parameters Fig. 8: Transient peak forward voltage versus
versus junction temperature (Reference Tj=125°C). dIF/dt (90% confidence).

1.1 VFP(V)
80
S factor IF=2*IF(av) Tj=125°C
70
1.0
60
50
0.9
IRM 40
30
0.8 20
Tj(°C) 10 dIF/dt(A/µs)
0.7 0
25 50 75 100 125 0 20 40 60 80 100

Fig. 9: Forward recovery time versus dIF/dt (90%

confidence).

tfr(ns)
800
IF=2*IF(av) Tj=125°C
700

600
VFR=1.1*VF max.
500

400

300
dIF/dt(A/µs)
200
0 20 40 60 80 100

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 STTA112U

APPLICATION DATA
The 1200V TURBOSWITCHTM series has been In such application (fig. A to D), the way of
designed to provide the lowest overall power calculating the power losses is given below :
losses in all frequency or high pulsed current
operations.

TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts

CONDUCTION REVERSE SWITCHING SWITCHING

LOSSES LOSSES LOSSES LOSSES
in the diode in the diode in the diode in the diode
due to the diode

Fig. A : "FREEWHEEL MODE".

SWITCHING
TRANSISTOR

IL
DIODE:
TURBOSWITCH

VR
tp
T

F = 1/T δ = tp/T
LOAD

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STTA112U

APPLICATION DATA (Cont’d)

Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.

PWM

tp
T

F = 1/T δ = tp/T

Fig. D : RECTIFIER DIODE.

Fig. E : STATIC CHARACTERISTICS.

I Conduction losses :

P1 = Vto x IF(AV) + Rd x IF2(RMS)

IF

Rd
Reverse losses :
VR
V P2 = VR x IR x (1 - δ)
V to VF
IR

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 STTA112U
APPLICATION DATA (Cont’d)
Fig. F : TURN-OFF CHARACTERISTICS.
Turn-on losses :
(in the transistor, due to the diode)
V
IL
VR × IRM 2 × (3+2 × S) F
P5 =
TRANSISTOR 6 x dIF ⁄ dt
I VR × IRM × IL ×(S + 2) × F
t +
2 × dIF ⁄ dt

Turn-off losses :
I
dI F /dt DIODE VR × IRM 2 × × S × F
P3 =
6 x dIF ⁄ dt
ta tb
V
t
dI R /dt
I RM
VR
trr = ta + tb S = tb / ta

I Turn-off losses :
dIF /dt = VR /L RECTIFIER with non negligible serial inductance
OPERATION
VR × IRM 2 × S × F L × IRM 2 × F
ta tb P3’ = +
V 6 x dIF ⁄ dt 2
t
dI R /dt
IRM P3, P3’ and P5 are suitable for power MOSFET
and IGBT
VR

trr = ta + tb
S = tb/ta
Fig. G : TURN-ON CHARACTERISTICS.

IF
I Fmax
dI F /dt Turn-on losses :
P4 = 0.4 (VFP - VF) x IFmax x tfr x F

0 t

VF
V Fp

VF
1.1V F

0 t
tfr

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STTA112U
PACKAGE MECHANICAL DATA
SMB

DIMENSIONS
E1
REF. Millimeters Inches
Min. Max. Min. Max.
D A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
E
c 0.15 0.41 0.006 0.016

A1
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
C A2

D 3.30 3.95 0.130 0.156

L b

L 0.75 1.60 0.030 0.063

FOOTPRINT DIMENSIONS (in millimeters)

2.3

1.52 2.75 1.52

Ordering type Marking Package Weight Base qty Delivery mode

STTA112U T03 SMB 0.107g 2500 Tape & reel
Epoxy meets UL94,V0
Band indicates cathode

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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