Junction Field Effect Transistor
JFET
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Thought of the Day
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Introduction (FET)
• Field-effect transistor (FET) are important devices such as
BJTs
• Also used as amplifier and logic switches
• What is the difference between JFET and BJT?
BJT is Current-controlled
FET is Voltage-controlled
Types of Field Effect Transistors
(The Classification)
n-Channel JFET
» JFET
FET p-Channel JFET
MOSFET (IGFET)
Enhancement Depletion
MOSFET MOSFET
n-Channel p-Channel n-Channel p-Channel
EMOSFET EMOSFET DMOSFET DMOSFET
INTRODUCTION
The ordinary or bipolar transistor has two main
disadvantage.
•It has a low input impedance
•It has considerable noise level
To overcome this problem Field effect transistor (FET)
is introduced
because of its:
•High input impedance
•Low noise level than ordinary transistor
Junction Field Effect Transistor (JFET) is a type of
FET.
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MOSFET
The MOSFET (Metal Oxide Semiconductor Field
Effect Transistor) transistor is a semiconductor device
which is widely used for switching and amplifying
electronic signals in the electronic devices. The
MOSFET is a core of integrated circuit and it can be
designed and fabricated in a single chip because of
these very small sizes.
.
The MOSFET is very far the most common
transistor and can be used in both analog and digital
circuits.
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Field Effect Transistor (FET)
FET is a voltage controlled device.
It consists of three terminal .
• Gate
• Source
• Drain
It is classified as
FET
JFET MOSFET
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Junction Field Effect Transistor (JFET)
Junction Field Effect Transistor
is a three terminal semiconductor device in which
current conducted by one type of carrier i.e. by electron
or hole.
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Construction of JFET
Source: The terminal through which the
majority carriers enter into the channel, is
called the source terminal S .
Drain: The terminal, through which the
majority carriers leave from the channel, is
called the drain terminal D .
Gate: There are two internally connected
heavily doped impurity regions to create two
P-N junctions. These impurity regions are
called the gate terminal G.
Channel: The region between the source
and drain, sandwiched between the two gates
is called
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the channel . 11
Types of JFET
JFET has two types :
• n- Channel JFET
• p- Channel JFET
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Symbol of JFET
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Features of JFET
JFET is a voltage controlled device i.e. input voltage (VGS)
control the output current (ID).
In JFETs, the width of a junction is used to control the
effective cross-sectional area of the channel through which
current conducts.
It is always operated with Gate-Source p-n junction in
reverse bias.
Because of reverse bias it has high input impedance.
In JFET the gate current is zero i.e. IG=0.
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Theory of Operation
(i) When gate-source voltage(VGS) is applied and drain-source voltage is zero i.e. VDS= 0V
When VGS = 0v , two depletion layers & channel are formed
normally.
When VGS increase negatively i.e. 0V > VGS > VGS(off) , depletion
layers are also increased and channel will be decrease.
When VGS=VGS(off), depletion layer will touch each other and channel
will totally removed. So no current can flow through the channel.
Depletion layer
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Theory of Operation
(ii) When drain-source voltage (VDS) is applied at constant gate-source
voltage (VGS) :
Now reverse bias at the drain end is
larger than source end and so the
depletion layer is wider at the drain end
than source end.
When VDS increases i.e. 0v < VDS <
VP , depletion layer at drain end is
gradually increased and drain current
also increased.
When VDS = VP the channel is
effectively closed at drain end and it
does not allow further increase of drain
current. So the drain current will
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become constant.
I-V Characteristic Curve
It is the curve between drain current (ID)and drain-source voltage
(VDS)for different gate-source voltage (VGS). It can be
characterized as:
For VGS=0v the drain current is maximum. It’s denoted as IDSS and called shorted
gate drain current.
Then if VGS increases Drain current ID decreases (ID < IDSS) even though VDS is
increased.
When VGS reaches a certain value, the drain current will be decreased to zero.
For different VGS, the ID will become constant after pinch off voltage (VP) though
VDS is increased.
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Transfer Characteristic Curve
curve shows the value of ID for a given value of VGS .
Fig: Transfer Characteristic Curve
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Pinch off Voltage (VP)
It is the minimum drain source voltage at which the drain
current essentially become constant.
Pinch off Voltage
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Saturation Level
After pinch off voltage the drain current become
constant, this constant level is known as saturation
level . Saturation Level
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Ohmic Region
The region behind the pinch off voltage where the
drain current increase rapidly is known as Ohmic
Region.
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Break Down Region
It is the region, when the drain-source voltage (VDS) is
high enough to cause the JFET’s resistive channel to
breakdown and pass uncontrolled maximum current .
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Cut off Voltage
The gate-source voltage, when the drain current
become zero is called cut-off voltage. Which is
usually denoted as VGS(off).
Here ID become Zero
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Advantages
It is simpler to fabricate, smaller in size.
It has longer life and higher efficiency.
It has high input impedance.
It has negative temperature coefficient
of resistance .
It has high power gain.
\
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Disadvantages
Greater susceptibility to damage in its
handling.
JFET has low voltage gain.
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Application of JFET
Voltage controlled resistor
Analog switch or gate
Act as an amplifier
Low-noise amplifier
Constant current source
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Junction Field Effect Transistor
THANKS
EVERYBODY
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