Field Effect Transistors (FETs) :

FET types: JFET, MOSFET

Structure and operation MOSFETs in Detail

[Link] structure
[Link] and depletion modes
[Link] voltage

MOSFET Applications - MOSFET as a switch

Classification of FET
Types of JFET
Types of JFET

Channel: Region between the source &

drain that allows current to flow when it is
conductive.
Construction of N-channel junction field effect transistor (JFET)
It consist of
N type semiconductor that is silicon bar with two
P type heavily doped regions distributed on
opposite sides of its middle part.
The two PN junctions are form by P type regions
and the space between the junctions that is N
type regions is known as a channel.
A single wire is taken out in the form of a terminal
when both the P type regions are connected
internally is known as the gate (G).
The electrical connection which is also known as
ohmic contacts are made to both ends of N-type
semiconductor and are taken in the form of two
terminal called as source (S) and drain (D).
The electrons enter the semiconductor through
the source (S) terminal and the drain (D) terminal
in which the electrons leave the semiconductor.
 Working of JEFT:
Case-i: VGS=0; VDS>0 Case-ii: VGS>0; VDS>0
result: Current ID increases result: Current ID decreases

VGS=0

S
Working of JEFT: The working of JFET can be explained as follows:

Case-i: VGS=0; VDS>0

ID
+

VGS=0

S
Working of JEFT: The working of JFET can be explained as follows:

Case-i: VGS=0; VDS>0 “OFF” State(Non-Conducting)

When a voltage VDS is applied between drain and

ID source terminals and voltage on the gate is zero as
+
shown in fig., the two pn junctions at the sides of
the bar establish depletion layers.

The electrons will flow from source to drain

through a channel between the depletion layers.

The value of drain current is maximum when

VGS=0

VGS=0 The size of the depletion layers determines the

width of the channel and hence current
S
conduction through the bar.
Case-ii: VGS>0; VDS>0
Case-ii: VGS>0; VDS>0 JFET-”ON” State(Conducting)

When a reverse voltage VGS is applied

between gate and source terminals,
as shown in fig, the width of
depletion layer is increased.

This reduces the width of conducting

channel, thereby increasing the
resistance of n-type bar.

Consequently, the current from

source to drain is decreased.
GAT
E

When VGS=0;VDS>0 then ID is max When VGS is increased further ,the channel
When VDS reverse bias increases the completely closes.
depletion regions widens & channel width This is called pinch off region.
decreases hence drain current decreases. This reduces the drain current to zero
The gate to source voltage at which the drain
current is zero is called “pinch off voltage”
IMP POINTS:

The FET acts more like a voltage controlled resistor which has zero resistance
when VGS = 0 and maximum resistance when the Gate voltage is very negative.

It is essential that the Gate voltage is never positive since if it is all the channel current will
flow to the Gate and not to the Source, the result is damage to the JFET.
 WORKING OF JFET:
1. When voltage is applied between source & drain majority carriers move through the channel
between depletion region.
2. The value of drain current is maximum when no external voltage is applied between gate &
source.
3. When gate to source reverse bias increases the depletion regions widens & channel width
decreases hence drain current decreases.
4. When gate to source voltage is increased further ,the channel completely closes
5. This is called pinch off region.
6. This reduces the drain current to zero.
[Link] gate to source voltage at which the drain current is zero is called “pinch off voltage”
8. In this pinch-off region the Gate voltage, VGS controls the channel current and VDS has little
or no effect.
9. The result is that the FET acts more like a voltage controlled resistor which has zero
resistance when VGS = 0 and maximum “ON” resistance ( RDS ) when the Gate voltage is very
negative.
10. It is essential that the Gate voltage is never positive since if it is all the channel current will
flow to the Gate and not to the Source, the result is damage to the JFET.
Output characteristic V-I curves of a typical junction FET

The characteristics curves has

four different regions of
operation for a JFET and these are
given as:
Ohmic Region
Cut-off Region
Saturation or Active Region
Breakdown Region
•Ohmic Region : When VGS = 0 the depletion layer of the channel is very small and the JFET
acts like a voltage controlled resistor.
• Cut-off Region: This is also known as the pinch-off region were the Gate voltage VGS is sufficient
to cause the JFET to act as an open circuit as the channel resistance is at maximum.
•Saturation or Active Region :The JFET becomes a good conductor and is controlled by the
Gate-Source voltage( VGS ) while the Drain-Source voltage( VDS ) has little or no effect.
•Breakdown Region : The voltage between the Drain and the Source ( VDS ) is high enough to
causes the JFET’s resistive channel to break down and pass uncontrolled maximum current.
 MOSFET
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor.

It is a type of Field Effect Transistor and it is voltage controlled device.

It is also called as Insulated Gate Field Effect Transistor (IGFET).

It is used for switching or amplifying electronic signals in the electronic devices.

It is the most commonly used transistor and it can be used in both analog and digital
circuits.
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is a type of Field
Effect Transistor and it is voltage controlled device. It is also called as Insulated Gate Field
Effect Transistor (IGFET). It is used for switching or amplifying electronic signals in the
electronic devices. It is the most commonly used transistor and it can be used in both analog
and digital circuits.

Enhancement Mode: The transistor

requires a Gate-Source voltage (VGS)
to switch the device “ON”..

Depletion Mode: The transistor

requires the Gate-Source voltage
(VGS) to switch the device “OFF”.
 P-Channel MOSFET

P Channel MOSFET Depletion and Enhancement Mode

 P Channel MOSFET Depletion and Enhancement Mode

The drain and source are heavily doped p+ region and the substrate is in n-type. The current flows due to the flow of positively
charged holes, and that’s why known as p-channel MOSFET.
When we apply negative gate voltage, the electrons present beneath the oxide layer experience repulsive force and are pushed
downward into the substrate, the depletion region is populated by the bound positive charges which are associated with the
donor atoms.
The negative gate voltage also attracts holes from the P+ source and drain region into the channel region.

N Channel MOSFET Depletion and Enhancement Mode

The drain and source are heavily doped N+ region and the substrate is p-type. The current flows due to the flow of negatively
charged electrons and that’s why known as n-channel MOSFET.
When we apply the positive gate voltage, the holes present beneath the oxide layer experience repulsive force, and the holes are
pushed downwards into the substrate, the depletion region is populated by bound negative charges which are associated with the
acceptor atoms.
The positive gate voltage also attracts electrons from the N+ source and drain region into the channel thus an electron-rich
channel is formed.
 N-Channel MOSFET

N-channel MOSFET Enhancement and Depletion Mode

 N-Channel Enhancement MOSFET Working and V-I Characteristics
N channel Enhancement MOSFET is a 3-terminal device. Let us first take a look at its
construction followed by the working principle and VI characteristics

The body of any N-channel MOSFET is made up of P-type material. 2 N-type materials are
diffused at the top. A depletion region will be formed in the PN junction. A metal contact is
made at the bottom of the P-type substrate and a terminal is taken out called the body or
substrate.

Similarly, a metal contact is made at the top of both the N-type materials, and two terminals
are taken out as Drain and source. A Silicon dioxide layer is drawn in between the two N-type
wells at the top. A metal contact is made at the top of it and a terminal is taken out called a
Gate terminal. You can see it is a 4-terminal device. But we earlier said that it is a 3-terminal
device.
 Construction
3-terminal device-Source ,Gate & Drain
The body of any N-channel MOSFET is made
up of P-type material.
2 N-type materials are diffused at the top. A
depletion region will be formed in the PN
junction.
A metal contact is made at the bottom of
the P-type substrate and a terminal is taken
out called the body or substrate.
Similarly, a metal contact is made at the top
of both the N-type materials, and two
terminals are taken out as Drain and
Asource.
Silicon dioxide layer is drawn in between
the two N-type wells at the top. A metal
contact is made at the top of it and a
terminal is taken out called a Gate terminal.
MOSFET Structure
 the body terminal and source terminal are internally shorted and connected to the ground.
Hence only three terminals are visible namely Source, Drain, and Gate.

MOSFET Symbol

The Enhancement type of MOSFET does not have any channel present.
So how will the current flow?
N N

P
Step 1-To get the drain current create a channel
for the free movement of electrons.

Step 2-To -create a channel apply a VGS

Step 3-now increase VGS further

Step 4-when VGS > VT (threshold voltage)an N

channel is induced near the gate terminal
 Step 1-To get the drain current create a channel
for the free movement of electrons.

Step 2-To -create a channel apply a VGS

Step 3-now increase VGS further

Step 4-when VGS > VT (threshold voltage)an N

channel is induced near the gate terminal

A channel is created still we are not getting

any current.
How to get the drain current?
Step 1-To get the drain current create a channel
for the free movement of electrons.
Step 2To -create a channel apply a VGS
Step 3-now increase VGS further
Step 4-when VGS > VT (threshold voltage)an N
channel is induced near the gate terminal
Step 5-Apply VDS keeping the drain at a higher
potential.
Step 6-On applying this voltage current will start
flowing from drain to source. This current is
called drain current or ID
The VGS voltage at which the channel is created is called the threshold voltage or VT. We can
conclude that when VGS > VT an N channel is induced near the gate terminal as shown in the
figure below.

N-channel Enhancement MOSFET Working

 The VGS voltage at which the channel is created is called the threshold voltage or VT.
So we can conclude that when VGS > VT an N channel is induced near the gate terminal as
shown.
When VGS > VT and VDS > 0, the current ID flows from drain to source as shown in the
figure below

MOSFET Current Flow

On increasing VDS further ID will increase.

But will this ID keep on increasing with the increasing value

of VDS?
On increasing the positive
voltage at the drain terminal a
reverse bias is formed at the PN
junction near the drain
terminal.
This will result in a thick
depletion region near the PN
junction.
Hence on increasing
VDS further, the channel near
the drain terminal is becoming
narrow
The drain current will face more
resistance near the drain
terminal.
A situation will reach when the drain current becomes constant and will not increase
further.
This situation is called the pinch-off situation and the drain current is called the saturation
current. The voltage at which we will get saturation current is called saturation voltage.
We can conclude that pinch-off is reached when VGS > 0 (constant) and VDS = VDS(SAT),
ID = ID(SAT) as shown in the figure below.

VDS(SAT) ID(SAT
)
We can conclude that pinch-off is reached when VGS > 0 (constant) and VDS = VDS(SAT),
ID = ID(SAT) as shown in the figure below.

VDS(SAT) ID(SAT
)

Now is there any way to increase the drain current beyond saturation?
 We can conclude that pinch-off is reached when VGS > 0 (constant) and VDS = VDS(SAT),
ID = ID(SAT) as shown in the figure below.

VDS(SAT) ID(SAT
)

The answer is yes. Increasing VGS further increases the value of ID. This will increase the
width of the complete N-channel. Hence VGS is controlling voltage.
N-channel Enhancement MOSFET V-I Characteristic
In the VI characteristics, VDS vs ID for various values of VGS.

From the graph, it is clear that the

current ID will become constant at
a specific value of VDS. current
ID increases only when the value
of VGS is increased.

VGS ↑ ID ↑

N-Channel Enhancement MOSFET V-I Graph

N-Channel Depletion MOSFET Working and V-I Characteristics
N channel depletion MOSFET is a 3 terminal device similar to N channel enhancement MOSFET.
The only difference between the two is the existence of an N-channel.
In N-channel depletion MOSFET, N-channel is already present. All other things are the same, as
you can see in the figure below.

MOSFET Structure
N Channel Depletion MOSFET – Working
Since the channel is already present, unlike the enhancement type MOSFET, we will get drain
current at zero gate voltage.
VDS Step 1-connect the Gate terminal to the
ground (VGS =0 )and apply a positive
voltage at the drain and source.
Step 2-On applying positive VDS, the
electrons in the N channel will move
towards the positive drain terminal, and
the drain current will start flowing from
drain to source.
Step 3-On increasing VDS further,
keeping VGS =0, a time will come where
ID will become constant, and that value
of drain current is called saturation
current
We can conclude that when VGS = 0 and VDS > 0, current ID flows from drain to source, and
on increasing VDS further, ID = Isat, as shown in the figure below

MOSFET Working
Now let us see the effect of gate voltage on N channel depletion MOSFET.

Apply VGS < 0(VGS=-ve). Holes from the P-type substrate will attract towards the negative gate
terminal and recombine with electrons in the N channel, forming electron-hole pairs.
On increasing negative potential at the gate, more electron-hole combinations will occur,
decreasing the number of free electrons in the N channel. As a result, ID decreases.
A time will come when the drain current will become zero. The negative gate voltage at which
the drain current is zero is called pinch-off voltage or VP.
We can conclude from this discussion at pinch-off, VGS = VP, VDS > 0, and ID = 0, as shown in
the figure below.
 Apply VGS < 0. Holes from the P-type
substrate will attract towards the negative
gate terminal and recombine with electrons
in the N channel, forming electron-hole
pairs.
On increasing negative potential at the gate,
more electron-hole combinations will occur,
decreasing the number of free electrons in
the N channel. As a result, ID decreases.
A time will come when the drain current will
become zero. The negative gate voltage at
which the drain current is zero is called
pinch-off voltage or VP.
We can conclude from this discussion at
pinch-off, VGS = VP, VDS > 0, and ID = 0, as
shown in the figure .
Effect of Gate Voltage on MOSFET
 On applying VGS > 0, the minority carriers
in the p-type substrate, i.e. electrons, will
get attracted towards the gate terminal,
thereby increasing the concentration of
electrons in the N-channel.
As a result, the drain current will increase
and exceed the saturation current.

MOSFET Working

We can conclude from this discussion, when VGS > 0 and VDS > 0, then ID > IDSS, as shown
in the figure.
N channel Depletion MOSFET V-I Characteristics
As discussed earlier, depletion-type MOSFET worked for both positive and negative gate
voltages. Now we can plot VI characteristics very easily. In the VI characteristics, you will see the
plots of VDS vs ID for various values of VGS.

N-Channel Depletion MOSFET VI graph

The graph shows that the current ID will flow for both positive and negative values of VGS. We
can see from the graph that the drain current is less than the saturation current for the
negative value of gate voltage, whereas for the positive value of gate voltage, the drain current
exceeds the saturation current. VGS = VP is also represented in this graph for which drain
current is zero irrespective of drain to source voltage.
 Difference between BJT and FET
Parameter BJT FET
BJT stands for Bipolar FET stands for Field Effect
Full form
Junction Transistor. Transistor.
BJT is a bipolar device, as
FET is a unipolar device,
current conduction takes
as current conduction is
Current carriers place due to both majority
only due to the majority
and minority charge
charge carriers.
carriers.
BJT has three terminals FET has three terminals
Terminals namely, emitter, base, and namely, source, gate, and
collector. drain.
BJT is a current-controlled FET is a voltage-controlled
Type of device
device. device.
Parameter BJT FET
In BJT, the base terminal In FET, the gate terminal
Control terminal acts as the control acts as the control
terminal. terminal.

The base current controls The gate voltage controls

Control quantity
the operation of the BJT. the operation of the FET.

FETs are of two types

BJTs are of two types
Types namely, JFET and
namely, NPN and PNP.
MOSFET.

BJT has comparatively low FET has a higher input

Input impedance
input impedance. impedance than BJT.
Parameter BJT FET
BJT has a high noise FET has very low noise
Noise
level. levels.
BJT has less thermal FET has very high thermal
Thermal stability
stability. stability.

BJT produces higher gain FET produces lower gain

Gain
at output. at the output.

BJT has a high-gain The gain bandwidth

Gain bandwidth product
bandwidth product. product for FET is low.

BJT is relatively cheaper

Cost FET is costlier than BJT.
than FET.
Parameter BJT FET
BJT has a lower frequency
response. Hence, the FET has a higher
Frequency response
frequency variations can frequency response.
affect its performance.
BJT has a relatively larger FET has a smaller physical
Size
physical size. size.
BJT has almost a linear FET has a non-linear
Input and output
relationship between input relationship between input
relationship
and output. and output.
BJT has an offset voltage FET does not have any
Offset voltage
before switching. offset voltage.
FETs are mainly used in
BJTs are mainly used in
high-power and analog
Applications low-current and analog
and digital electronic
electronic applications.
applications.
 Comparison Chart
PARAMETERS JFET MOSFET

Mode of operation It operates only in depletion It can be operated in either

mode. depletion or enhancement
mode.

Symbol
 Comparison Chart
PARAMETERS JFET MOSFET

Mode of operation It operates only in depletion It can be operated in either

mode. depletion or enhancement
mode.
Symbol
Input impedance JFET have much smaller MOSFETs have much higher
input impedance mainly of input impedance of about
the order of 108 Ω. 1010 to 1015 Ω due to small
leakage current.
Characteristic curve As JFET has higher drain The characteristic curve is
resistance, the characteristic less flat than those of JFET.
curve is more flatter.
PARAMETERS JFET MOSFET

Drain resistance JFET has drain resistance of Drain resistance in case of

the order of 105 to 106 Ω MOSFETs is of the order of 1
to 50 K Ω.
Fabrication Fabrication process of JFET MOSFET can be easily
is more difficult than fabricated thus it is more
MOSFET. widely used.
Cost Manufacturing of JFET is MOSFETs are slightly
cheaper as compared to expensive as compared to
MOSFET. JFET.
Susceptibility to damage It does not require special These are more susceptible
handling. to overload voltage and
requires special handling.
 Key Differences Between JFET and MOSFET
The following points describe the difference between JFET and MOSFET:
[Link] factor that generates the key difference between JFET and MOSFET is that a JFET operates
in only depletion mode. While MOSFET operates in both depletion and enhancement mode.
[Link] is normally termed as ON devices. As the negative gate to source voltage turns the device
to OFF state. As against MOSFET is termed as normally OFF devices because in E-MOSFET
applied gate voltage turns ON the device.
[Link] to small leakage current, the input impedance of MOSFET is much higher as compared to
JFET.
[Link] about operational speed, FET possesses slower operations and provides high drain
resistance as compared to MOSFET.
[Link] possess flatter characteristic curve than those of the MOSFETs.
Conclusion
From the above discussion, we can conclude that MOSFET is somewhat better than JFET. When
we talk about electrometer applications then MOSFETs are more useful than JFETs.