Field Effect Transistor(FET)

FET
• The name field effect is derived from the fact that the current flow in
the device is controlled by an electric field set up by an externally
applied voltage
• There are two main types of FETs:
• 1. Junction Field-effect transistor (JFET)
• 2 Metal-oxide-semiconductor field-effect transistor (MOSFET).
• In a BJT. current is conducted by charge carriers of both the polarity
(i.e., electrons and holes). That is the reason why the conventional
transistor is called bipolar.
• In contrast, the current in an FET is conducted by the majority charge
carriers in the channel (i.e., by electrons in N-channel, and by hole in
P-channel).
• Since the conduction is performed by charge carriers of only one
polarity, FETs are called unipolar transistors.
CLASSIFICATION OF FET
JUNCTION FIELD-EFFECT TRANSISTOR (JFET)

SYMBOL
Current and Voltage across the terminals
Structure of a Junction Field-Effect Transistor
(JFET)
• A JFET can be of N-channel type or of P-channel type.
• The structure of a P-channel JFET is similar to that of an N-channel JFET
except that in its structure, N-type is replaced by P-type and vice versa.
• In its simplest form, the structure of an N-channel JFET starts with nothing
more than a bar of N-type silicon.
• This bar behaves like a resistor between its two terminals, called source and
drain .
• We introduce heavily doped P-type regions on either side of the bar.
• These P regions are called gates .
• Usually, the two gates are connected together .
• The gate terminal is analogous to the base of a BJT. This is used to control the
current flow from source to drain.
• Thus, source and drain terminals are analogous to emitter and collector
terminals respectively, of a BJT.
TERMINOLOGY USED IN FET
• 1. Source: The source is the terminal
through which the majority carriers
(electrons in case of N-channel JFET, and
holes in case of P-channel JFET) enter the
bar.
• 2. Drain : The drain is the terminal through
which the majority carriers leave the bar.
• 3. Gate on both sides of the N-type bar,
heavily doped P regions are formed. These
regions are called gates. Usually, the two
gates are joined together to form a single
gate.
• 4. Channel : The region between the source
and drain, sandwiched between the two
gates, is called channel. The majority
carriers move from source to drain through
this channel.
Difference between BJT & FET
BJT FET
• Three terminal semiconductor device. • Three terminal semiconductor device
• Emitter, base, collector • Source, gate,drain
• Voltage controlled device
• Current controlled device
• Unipolar device
• Bipolar device
• Has positive temperature coefficient.
• Has negative temperature coefficient.
• Has high input resistance
• Has low input resistance • Used for low voltage applications
• Used for low current applications • Two types – n-channel FET& p-channel
• Two types- npn & pnp FET
The P-Channel Junction Field-effect Transistor
MOSFETs(Metal Oxide Semiconductor FET)
• A Metal Oxide Semiconductor Field-effect Transistor (MOSFET,
MOS-FET, or MOS FET) is a field-effect transistor (FET with an
insulated gate) where the voltage determines the conductivity of the
device.

• It is used for switching or amplifying signals. The ability to change

conductivity with the amount of applied voltage can be used for
amplifying or switching electronic signals.

• MOSFETs are now even more common than BJTs in digital and
analog circuits.
Classification-MOSFETs
Symbol of MOSFET
N-Channel Enhancement MOSFET -
• Enhancement-type MOSFET is normally OFF during zero gate bias.
• It is driven into conduction by applying sufficient gate voltage by which a
channel is Created between source and drain.
• Enhancement-type MOSFET is of two types; n-channel and p-channel.
• The n-channel enhancement- type MOSFET becomes ON by applying a positive
voltage to the gate with respect to the source, and the p-channel
enhancement-type MOSFET becomes ON by applying a negative voltage at the
gate.
• The basic construction of an n-channel
enhancement-type MOSFET is shown in
Figure.
• Its construction starts from a p-type silicon
substrate into which two heavily doped n-
regions are embedded to form source and
drain regions. The substrate is also referred to
as the body.
• The source and drain terminals are connected
through metallic contacts to two n-doped
regions.
• A thin layer of silicon dioxide is covered in the
region betyeen the source and the drain.
• This region, now depleted of charge carriers
(electrons), will act as the channel by applying
a suitable positive voltage to the gate
terminal.
• The gate terminal is formed by depositing a
metal electrode over the oxide.
• In an enhancement-MOSFET, there is no channel created during its construction.
Instead, a channel is formed during its operation, but with the application of
gate bias.
• It is the primary difference between the construction of enhancement type-
MOSFET and depletion type-MOSFET. In depletion type-MOSFET, a channel is
created as a part of construction.
working principle
• When no voltage is applied to the gate (VGS = 0), there's no
conductive channel between the source and drain. The P-type
substrate and N-type regions form a reverse-biased PN junction,
preventing current flow.
• To create a conductive channel, a positive voltage (VGS) is applied
to the gate relative to the source. This positive voltage attracts free
electrons from the P-type substrate towards the gate, forming a
thin layer of N-type material called an "inversion layer" or
"channel."
• Once the channel is formed, electrons can flow from the source to
the drain when a voltage (VDS) is applied between them. The
amount of current flowing (ID) is controlled by the gate voltage
(VGS). A higher VGS creates a stronger channel, allowing more
current to flow.
• The minimum gate voltage required to create a conductive channel
is called the threshold voltage (Vth). If VGS is less than Vth, the
channel is not formed, and no significant current flows.
• Pinch-off occurs when Vds exceeds Vgs - Vth, causing the channel to
narrow near the drain. This limits the drain current (Id) to a
saturation level (Idsat), regardless of further Vds increase.
 N-channel Enhancement MOSFET V-I
Characteristic

• The plots of VDS vs ID for

various values of VGS.
• The current ID will become
constant at a specific value of
VDS. current ID increases only
when the value of VGS is
increased.
• Operating Regions: The N-channel enhancement MOSFET has three
main operating regions:
Depletion-type MOSFET

• The depletion-type MOSFET is normally in ON condition until the field effect is

used to turn it OFF.
• A MOS transistor conducts only when there is a channel or path between the
source and the drain. In a depletion-type MOS-FET, a channel is physically
created at the time of fabrication connecting the source and drain.
• To turn a depletion-type MOSFET OFF, appropriate bias conditions must be
applied in order to deplete the channel region of charge carriers, thereby
removing the conduction path between source and drain.
• A channel, typically n-type, is physically formed between the source
and drain terminals.
• When a negative voltage is applied to the gate, it repels electrons
from the channel, reducing its conductivity. This is known as
depletion.
• As the negative gate voltage increases, the channel narrows further,
leading to a decrease in drain current.
• Even with zero gate voltage, the channel exists, allowing current to
flow between the source and drain.
• Applying a positive gate voltage attracts more electrons to the
channel, increasing its conductivity and allowing for higher drain
current. This mode of operation is similar to an enhancement-type
MOSFET.
Key benefits of MOSFETs:

• 1. High-speed operation
• 2. Low power dissipation
• 3. High input impedance
• 4. Scalability (enabling smaller, denser ICs)
• 5. Simple fabrication process
• 6. High packing density (more transistors per chip)
• 7. Improved reliability
Modern applications of MOSFETs

• 1. Microprocessors
• 2. Memory chips (DRAM, Flash)
• 3. Digital signal processors
• 4. Analog-to-digital converters
• 5. Power management ICs
• 6. System-on-Chip (SoC) designs
• Advantages of MOSFETover JFETs:

• 1. Higher input impedance

• 2. Lower power consumption
• 3. Faster switching times
• 4. Scalability (easier to shrink)
• 5. Simpler fabrication process

• Advantages MOSFET over BJTs:

• 1. Lower power consumption

• 2. Higher input impedance
• 3. Faster switching times
• 4. Simpler biasing requirements
• 5. Reduced thermal runaway risk