ASSIGNMENT: NGHIÊN CỨU VỀ FET VÀ MOSFET

Họ và tên sinh viên: Lê Văn Chương

Mã sinh viên: 24CE008

Môn học: Kỹ thuật mạch điện tử

Ngày nộp: 7/4/2025

1. Introduction FET and MOSFET:

a) FET:
- The field effect transistor (FET) is a type of transistor that uses an electric field to
control the current through a semiconductor. The FET is a three-terminal device:
source, gate and drain. FET control the current by the application of a voltage to
the gate, which in turn alters the conductivity between the drain and source.
- Similar to a bipolar transistors, there are n-channel and p-channel field effect
transistors. But BJT are bipolar devices, referring to the fact that BJT rely on both
electrons and holes as charge carries for conduction, unlike BJT, FET use onle
one type of charge carrier (either electrons or holes, but not both) to conduct
current.
- The concept of the field-effect transistor (FET) was patented by Julius Edgar
Lilienfeld in 1925 and Oskar Heil in 1934, but they could not build a practical
semiconductor device. In 1947, after the patent expired, John Bardeen and Walter
Houser Brattain at Bell Labs, under William Shockley’s guidance, invented the
point-contact transistor after Shockley failed to create an FET due to issues with
surface states, dangling bonds, and materials. This failure led to the invention of
the bipolar junction transistor (BJT) by Shockley in 1948.
- The first FET device to be successfully built was the junction field effect
transistor (JFET). A JFET was first patented by Heinrich Welker in 1945.
b) MOSFET:
- The MOSFET (Metal oxit semiconductor field effect transistor) is another
category of FET. MOSFET uses a metal-oxide-semiconductor structure to control
current through an electric field. The gate of MOSFET is insulated from the
channel by a silicon dioxide (SiO2) layer.
- In 1955, Carl Frosch and Lincoln Derrick accidentally discovered that a silicon
dioxide layer on a silicon wafer provided surface passivation. By 1957, they used
masking and predeposition to create silicon dioxide transistors, demonstrating that
it insulated and protected the wafer while preventing dopant diffusion.
APPLICATION OF FET:
 - FET is a voltage-controlled electrical device; due to this, it is utilised in
operational amplifiers in the form of variable voltage resistors.
- FET is used for the mixer operation of TV and FM receivers.
- FETs, such as JFETs (Junction FETs), are used in audio and RF amplifiers due to
their high input impedance and low noise.
APPLICATION OF MOSFET:
- MOSFETs are used in the design of the chopper circuit.
- Power MOSFETs can be used to regulate DC motors.
- MOSFETs amplify signals in audio equipment, sensors, and radio frequency (RF)
devices.
- MOSFETs are the backbone of modern integrated circuits (ICs), like
microprocessors and memory chips (e.g., CMOS technology), due to their small
size, low power consumption, and scalability.
2. STRUCTURE OF FET AND MOSFET:
a) Structure of FET:
- FET have two types: n-channel and p-channel. FET have three main parts: Source,
Gate and Drain.
- Source: The input of current flowing through the channel.
- Drain: The output of the current from the channel.
- One end of the n-type (or p-type) channel is connected through an ohmic contact
to the drain (D) terminal, while the other end is connected through an ohmic
contact to the source (S) terminal.
- Two p-type (or n-type) regions are diffused into an n-type (or p-type) material to
control the channel, and both regions are connected to the gate lead. In some
depictions, the gate lead may be shown connected to only one of these regions.
- Channel: Semiconductors such as silicon (Si), which can be n-type (electronically
conductive) or p-type (conductive by holes).
- Gate: The inverse semiconductor region with the channel (p-type for the n-type
channel, n-type for the p-type channel), creating a p-type junction.
- In an N-channel FET, a positive voltage applied to the gate attracts electrons into
the channel and increases its conductivity. In a P-channel FET, a negative voltage
applied to the gate attracts holes into the channel and increases its conductivity.
b) Structure of MOSFET:
- MOSFETs have two types: depletion type and enhancement type. Of the two
types, the enhancement MOSFET is more widely used. Because poly crystalline
silicon is now used for the gate material instead of metal.
- ENHANCEMENT MOSFET (E-MOSFET): The E-MOSFET has no structural
conduction channel; hence it is a normally off device. Substrate: usually
semiconductor P or N depending on the type of mosfet, that connected to the
Source. Gate (G): Made of metal (Al) or polysilicon, insulated from the channel
by an oxide layer. Source: the source terminal where charge carriers (electrons or
 holes) enter the channel. Drain (D): The drain terminal where charge carriers exit.
SiO2 is a type of insulator referred to as a dielectric between the Gate and
Channel. Thin insulating layer (~1-10 nm). Channel: In normal state, E-
Mosfet has no channel. However, when the voltage is large enough to put in the ga
te, a led channel is created from the shift of charges, allowing the current to run fro
m the source to the trough.
- Deleption MOSFET(D-MOSFET): The same as E-MOSFET but the drain and
source are diffused into the substrate material and then connected by a narrow
channel adjacent to the insulated gate.
c) The difference between mosfet and other fet types:
MOSFET JFET
Structure There is an oxide layer (SIO₂) Gate is in direct contact with the channel
isolated gate and channel. with PN Junction.

Active Enhancement or Deleption Just Deleption

Input Very hight (~1012) due to Lower (~108)

resistance insulation

3. Method of operation of FET and MOSFET:

a. Active of FET:
- Reverse biasing of the gate-source junction produces a depletion region along the
pn junction, which extends into the channel and thus increases its resistance by
restricting the channel width. With n-type: Vgs<Vds when the voltage at Vgs
increases, the depletion region expands, the channel narrows, and the current flow
is restricted. When Vgs = 0V: the widest lead channel.
JFET E-MOSFET D-MOSFET
Vgs reverse bias Vgs bias Negative Vgs

b. Active of MOSFET:
- E-MOSFET: When Vgs=0; E-MOSFET has no channel, so there is no current
from Drain to Source. When voltage is applied to the Gate, an electric field is
generated at the gate terminal, attracting charge carriers from the semiconductor
substrate. A conductive channel forms between the Drain and Source, allowing
current to flow through. The minimum voltage to be placed in Gate to start
forming the leading channel between Drain and Source, allowing the current to run
through is threshold voltage.
 - D-MOSFET: There is always a channel available when Vgs = 0V, the current can
run even without the control voltage at the gate (Gate). Vgs is negative A stronger
depletion region is formed, narrowing the channel and restricting current flow. If
V_GS is negative enough (V_GS(off)), the channel closes completely, turning off
the MOSFET.
N-channel P-channel
Need positive voltage to turn on Need negative voltage to turn on
Current from Drain to Source Current from Source to Drain

4. FET AND MOSFET BIASING:

- Self-bias is an effective and common self-determination technique in JFET
circuits, ensuring that the Gate-Source splice is always reverse-polarized, allowing
the device to operate stably without the need for an additional voltage source for
the Gate.
- In a fixed bias configuration, the Gate (G) is connected to a fixed negative voltage
(for N-channel) using a resistor R. The Source (S) ís directly grounded. In Fixed
Bias, the fixed voltage at the Gate creates a static electric field, which controls the
operation of the FET. This electric field does not change unless you change the
Vgg value.
- Id dependent on voltage between Gate and Source. The relationship is described
by the shockley equation
MOSFET BIASING: MOSFET controls the current between drain and source
through the voltage on the gate without the need for the current to enter Gate.
When Vds is small, MOSFET acts as a resistor that varies with Vgs. When Vds is
large enough, Mosfet goes into the saturated area, where Ids is decided mainly by
Vgs, not dependent on Vds.
Mosfet voltage bias FET current bias
Control by Vgs Control by current
Applying a specific voltage to the Use a large current source or resistance in
Gate (usually via split voltage or the source to fource the current
a separate source)
Easy to be affected by Stable temperature
temperature

5. Application and different between FET and MOSFET:

a. Application of FET:
- A single-stage amplifier: A single-stage amplifier has three basic configurations
using FET: common source, common drain, and common gate. The common
source amplifier has high voltage gain and a very high input impedance. The
common drain amplifier is a buffer amplifier with a voltage gain close to one, a
very high input impedance, and a low output impedance. The common gate
amplifier has high voltage gain, low input impedance, and performs well at high
frequencies.
- Switching circuit: In switch mode, FET is an ideal switch compared to BJT,
thanks to its very low channel resistance Rd(ON) and very high Rd(OFF)). Due
to these advantages, FET is used as an analog switch.
b. Application of MOSFET:
- Digital logic circuits: Logic circuits are a big application of MOSFET, especially
CMOS technology, it consists of NMOS and PMOS. NMOS (N-type Metal-
Oxide-Semiconductor) logic uses n-type MOSFETs (Metal-Oxide-Semiconductor
Field-Effect Transistors) to implement logic gates and other digital circuits. In
NMOS logic, only n-type transistors are used for both logic operations and pull-
down networks, while resistors or depletion-mode transistors are used as pull-up
elements. PMOS logic utilizes p-channel MOSFETs to construct logic gates and
digital circuits. These transistors function by generating an inversion layer within
an n-type substrate, enabling conduction between the source and drain terminals.
CMOS (Complementary Metal–Oxide–Semiconductor) is a widely used
technology for building integrated circuits (ICs). Its core advantage lies in the use
of both p-channel and n-channel MOSFETs, allowing for low power consumption
and high noise immunity, making it the dominant choice in modern electronics.
- Power MOSFET: SMPS - Switch Mode Power Supply converts electrical
power efficiently by switching the input voltage on and off rapidly and controlling
the output voltage with high-frequency switching, the MOSFET can turn on and
off very quickly, making it ideal for high-frequency applications like SMPS.
- PWM (Pulse Width Modulation): To control the engine speed, saving energy in
electric vehicles and robots.
- High power MOSFET is used in X-rays and MRI devices, supporting stable and
high-performance power supply.
COMPARE FET AND MOSFET

FET MOSFET
Structure Has p-n junction between the Has an insulating SiO2
 Gate and Channel layer
Active Equal to Gate voltage, with small By Gate voltage, almost
leakage current no current consumption

- Advantages of MOSFET compared to FET:

- Higher Switching Speed: MOSFETs can switch on and off faster than
conventional silicon FETs, making them ideal for high-frequency applications
such as RF amplifiers and digital circuits.
- Lower Power Consumption: MOSFETs typically have lower gate drive power
requirements due to their insulated gate structure, which leads to reduced power
loss during operation, especially in digital circuits.
- Higher Input Impedance: The insulated gate of a MOSFET results in very high
input impedance, which minimizes the loading effect on preceding stages in a
circuit. This is beneficial in analog applications and signal processing.
- Diverse Configurations: MOSFETs come in various configurations, such as
enhancement-mode and depletion-mode, providing flexibility for different circuit
designs.
- The power MOSFET is the most common power semiconductor device in the
world, due to its low gate drive power, fast switching speed, easy advanced
paralleling capability, wide bandwidth, ruggedness, easy drive, simple biasing,
ease of application, and ease of repair.
- Disadvantages of MOSFET compared to FET:
- In MOSFET, the middle layer of gate and channel is very fragile, susceptible to ele
ctrostatic damage during installation. It requires a good designed circuit to avoid
incidents.
- MOSFET is very vulnerable to voltage overload
- More complex biasing in analog circuits.
- STABILITY:
- MOSFET has a higher stability thanks to the Sio₂ insulation layer between Gate a
nd the Channel, helping to reduce leakage and signal noise.
- Mosfet has an extremely high input impedance (~ 10^12Ω) so it is less affected by
electromagnetic noise.
- PERFORMANCE:
- MOSFET has faster switching speed → suitable for digital circuits, microprocesso
rs, memory and power control
 - Lower energy consumption → MOSFET has very high electricity, almost no cons
umption of electric current at the Gate pole, helping to save energy.
- SCALABILITY:
- MOSFET is easy to integrate into the micro circuit → CMOS technology (Comple
mentary MOS) is the standard in microprocessor, memory and FPGA.
- Miniature to 3nm (Finfet, gaafet).
6. SUMMARY:
- Field-Effect Transistor (FET) is a semiconductor device that consists of a channel
made of a semiconductor material, with two electrodes connected at either end,
namely the drain and the source.
- When a voltage is applied to the gate electrode, an electric field is created across
the insulating layer, which in turn creates a depletion region in the channel. The
depletion region reduces the number of free charge carriers in the channel, and
thus the conductivity of the channel is reduced. This effect is known as the field-
effect, and it is the basis of the FET operation. In the case of an n-type FET, a
negative voltage applied to the gate electrode creates a depletion region in the
channel, which reduces the flow of electrons from the source to the drain.
- The MOSFET is another type of field-effect transistor (FET) that can switch
electronic signals or amplify them. It is made of an insulated gate that controls the
device’s conductivity per the voltage applied. This nature makes it useful for
switching electronic signals or amplifying by adjusting its conductivity with
changing voltage levels. Sio₂ insulation layer (isolated with channel). Gate voltage
generated magnetic field, electronic suction/load (Inversion layer).
- MOSFET has been and will continue to play a central role in digital electronics an
d power, from microprocessor, energy system, to engine control.
- FET still has applications in small signal amplification, high sensitive sensor and
accurate measurement system.
7. REFERENCES:
- Electronic Devices, Global Edition 10th Edition by Thomas Floyd.
- Electronic devices and circuit theory by Robert [Link], Louis Nashelky.