BHARATI VIDYAPEETH
(DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING, PUNE
DEPARTMET OF
ELECTRONICS AND COMMUNICATION ENGINEERING
SUBJECT: PRINCIPLES OF ELECTRONICS
SEM: II (Computer Science & Business System)
Unit No. III
Bipolar Junction Transistors
By,
Mrs. Jyoti Morbale
Transistor Basics:
The word Transistor is a combination of the words Transfer Varistor
used to describe their mode of operation .
Transistor is a semiconductor device which is used to amplify the
signals as well as in switching circuits. Generally transistor is made of
solid material which contains three terminals such as emitter (E), Base
(B) and Collector (C) for connections with other components in the
circuit
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Introduction to BJTs :
Types of BJT:
1) NPN 2) PNP
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The NPN Transistor
(Negative-Positive-Negative)
The NPN transistor consists of two n-type semiconductor materials
and they are separated by a thin layer of p-type semiconductor. Here
the majority charge carriers are electrons and holes are the minority
charge carriers.
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A PNP Transistor Configuration
The PNP transistors contain two p-type semiconductor materials and
are separated by a thin layer of n-type semiconductor. The majority
charge carriers in the PNP transistors are holes and electrons are
minority charge carriers. The arrow in the emitter terminal of
transistor indicates the flow of conventional current. In PNP transistor
the current flows from Emitter to Collector.
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Bipolar Transistor Configurations
As the Bipolar Transistor is a three terminal device, there are
basically three possible ways to connect it within an electronic circuit
with one terminal being common to both the input and output.
Each method of connection responding differently to its input signal
within a circuit as the static characteristics of the transistor vary with
each circuit arrangement.
1. Common Base Configuration
2. Common Emitter Configuration
3. Common Collector Configuration
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Common Base Configuration :
As its name suggests, in the Common Base or grounded base
configuration, the BASE connection is common to both the input
signal AND the output signal with the input signal being applied
between the base and the emitter terminals. The corresponding
output signal is taken from between the base and the collector
terminals as shown with the base terminal grounded or connected
to a fixed reference voltage point. The input current flowing into
the emitter is quite large as its the sum of both the base current and
collector current respectively
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Current Amplification Factor (α):
The current amplification factor or current gain of a transistor is the
ratio of output current to the input current.
The ratio of change in collector current (ΔIC) to the change in emitter
current (ΔIE) when collector voltage VCB is kept constant, is called
as Current amplification factor. It is denoted by α.
Input Characteristics :
Here base is grounded and it is used as the common terminal for both
input and output.
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It is defined as the characteristic curve drawn between input voltage to
input current whereas output voltage is constant.
To determine input characteristics, the collector base
voltage VCB is kept constant at zero and emitter
current IE is increased from zero by increasing VEB.
This is repeated for higher fixed values of VCB.
A curve is drawn between emitter current and
emitter base voltage at constant collector base
voltage is shown in figure.
When VCB is zero EB junctions is forward biased.
So it behaves as a diode so that emitter current 14
increases rapidly.
Output Characteristics
It is defined as the characteristic curve drawn between output voltage
to output current whereas input current is [Link] determine
output characteristics, the emitter current IE is kept constant at zero
and collector current Ic is increased from zero by increasing
[Link] is repeated for higher fixed values of IE.
From the characteristic it is seen that for a constant value of IE, Ic is
independent of VCB and the curves are parallel to the axis of [Link]
the emitter base junction is forward biased the majority carriers that is
electrons from the emitter region are injected into the base region.
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The Common Emitter (CE) Configuration
In the Common Emitter or grounded emitter configuration, the input
signal is applied between the base, while the output is taken from
between the collector and the emitter as shown. This type of
configuration is the most commonly used circuit for transistor based
amplifiers and which represents the "normal" method of bipolar transistor
connection. The common emitter amplifier configuration produces the
highest current and power gain of all the three bipolar transistor
configurations. This is mainly because the input impedance is LOW as it
is connected to a forward-biased PN-junction, while the output
impedance is HIGH as it is taken from a reverse-biased PN-junction.
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Current Amplification factor (β):
The ratio of change in collector current (ΔIC) to the change in base
current (ΔIB) is known as Base Current Amplification Factor. It is
denoted by β.
In this type of configuration, the current flowing out of the transistor
must be equal to the currents flowing into the transistor as the emitter
current is given as Ie = Ic + Ib. Also, as the load resistance (RL) is
connected in series with the collector, the current gain of the common
emitter transistor configuration is quite large as it is the ratio of Ic/Ib and
is given the Greek symbol of Beta, (β). As the emitter current for a
common emitter configuration is defined as Ie = Ic + Ib, the ratio of Ic/Ie
is called Alpha, given the Greek symbol of α. Note: that the value of
Alpha will always be less than unity.
By combining the expressions for both Alpha, α and Beta, β the
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mathematical relationship between these parameters and therefore the
current gain of the transistor can be given as:
Relation between β and α
Let us try to derive the relation between base current amplification
factor and emitter current amplification factor.
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In common emitter configuration circuit is shown in figure. Here
emitter is grounded and it is used as the common terminal for both
input and output. It is also called as grounded emitter configuration.
Base is used as a input terminal whereas collector is the output
terminal.
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Input Characteristics
It is defined as the characteristic curve drawn between input voltages to
input current whereas output voltage is constant.
To determine input characteristics, the collector base voltage VCB is
kept constant at zero and base current IB is increased from zero by
increasing VBE. This is repeated for higher fixed values of VCE.
A curve is drawn between
base current and base emitter voltage
at constant collector base voltage
is shown in figure Here the base
width decreases.
So curve moves right as
VCE increases.
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Output Characteristics
It is defined as the characteristic curve drawn between output voltage to
output current whereas input current is constant.
To determine output characteristics, the base current IB i s kept constant
at zero and collector current Ic is increased from zero by increasing VCE.
This is repeated for higher fixed values of IB.
From the characteristic it is seen that for a constant value of IB, Ic is
independent of VCB and the curves are parallel to the axis of VCE.
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The Common Collector (CC) Configuration :
In the Common Collector or grounded collector configuration, Here
collector is grounded and it is used as the common terminal for both
input and output. It is also called as grounded collector configuration.
Base is used as a input terminal whereas emitter is the output
[Link] input signal is connected directly to the base, while the
output is taken from the emitter load as shown. This type of
configuration is commonly known as a Voltage Follower or Emitter
Follower circuit
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Current Amplification Factor (γ):
The ratio of change in emitter current (ΔIE) to the change in base
current (ΔIB) is known as Current Amplification factor in common
collector (CC) configuration. It is denoted by γ.
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Input Characteristics
It is defined as the characteristic curve drawn between input voltage to input
current whereas output voltage is constant.
To determine input characteristics, the emitter base voltage VEB is kept
constant at zero and base current IB is increased from zero by increasing
VBC. This is repeated for higher fixed values of VCE.A curve is drawn
between base current and base emitter voltage at constant collector
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voltage is shown in figure
Output Characteristics
It is defined as the characteristic curve drawn between output voltage to output
current whereas input current is constant.
To determine output characteristics, the base current IB is kept constant at zero
and emitter current IE is increased from zero by increasing VEC. This is
repeated for higher fixed values of IB.
From the characteristic it is seen that for a constant value of IB, IE is
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independent of VEB and the curves are parallel to the axis of VEC.
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THANK YOU
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